Canon Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Yukinobu Suzuki

Takashi Ishigami

Koichi Watanabe

Takehito Okabe

Akihiro Kawano

Sho Suzuki

Tsutomu Tange

Mitsuhiro Yomori

Koji Hara

Yasuo Kohsaka

Takashi Watanabe

Nobutaka Ukigaya

Toshiyuki Ogawa

Takeshi Aoki

Takayasu Kanesada

Naomi Fujioka

Yoshiyuki Nakagawa

Hideki Ina

Kenya Sano

Ryo Yoshida

Aiko Kato

Yoshihisa Kawamura

Tomoyuki Tezuka

Keita Torii

Takuya Hara

Kenji Togo

Daichi Seto

Hiroshi Takakusagi

Hitoshi Aoyama

Norihiko Nakata

Yoichiro Yabe

Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.

Photoelectric conversion apparatus and equipment including the same

A semiconductor apparatus configured to decrease occurrence of exfoliation between a conductor layer and an insulator layer is provided. A first region containing silicon and copper is disposed between a first conductor portion and a first insulator portion. A second region containing silicon and copper is disposed between a second conductor portion and a second insulator portion. The first region has a maximum nitrogen concentration higher than that of the second region.

Semiconductor apparatus and equipment

A curved surface constituting a convex surface or a concave surface of each of a plurality of lenses includes at least a silicon nitride layer and another silicon nitride layer. An interlayer having a composition different from a composition of the silicon nitride layer and a composition of the other silicon nitride layer is arranged between the silicon nitride layer and the other silicon nitride layer, and a thickness of the interlayer is less than a thickness of the silicon nitride layer and a thickness of the other silicon nitride layer.

Optical apparatus and equipment

Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.

Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region

A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.

Semiconductor apparatus, system, and method of producing semiconductor apparatus

A photoelectric conversion device has an insulator film disposed on a silicon layer having a photoelectric conversion region, the insulator film having a portion overlapped with the photoelectric conversion region, a silicon oxide film disposed on the insulator film, the silicon oxide film having a portion overlapped with the photoelectric conversion region, an electroconductive member disposed between the insulator film and the silicon oxide film, and a silicon oxide layer disposed between the electroconductive member and the silicon oxide film, in which the portion overlapped with the photoelectric conversion region of the silicon oxide film is in contact with the portion overlapped with the photoelectric conversion region of the insulator film and the hydrogen concentration of the silicon oxide film is greater than the hydrogen concentration of the silicon oxide layer.

Photoelectric conversion device, image pickup system, and method for manufacturing photoelectric conversion device

A method of manufacturing a photoelectric conversion device includes forming, with material containing aluminum, an electrically conductive pattern on a semiconductor substrate including a photoelectric converter, forming, on the electrically conductive pattern, an insulating film containing hydrogen, performing first annealing in a hydrogen-containing atmosphere, forming, on the insulating film, a protective film having lower hydrogen permeability than that of the insulating film after the first annealing, and performing second annealing in the hydrogen-containing atmosphere. Temperature in the first annealing is not less than temperature when forming the insulating film and not more than temperature when forming the protective film.

Method of manufacturing photoelectric conversion device

A sputtering target contains high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within &#xb1;30% as a whole target. Dispersion of the oxygen content is within &#xb1;80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.

Sputtering target

A method of manufacturing a semiconductor device provided with an interlayer insulating film formed on a semiconductor substrate, and a plurality of wiring layers formed on the interlayer insulating film. The method includes forming of a first wiring layer closest to the semiconductor substrate among the plurality of wiring layers, and forming of an alloy of a titanium layer and a metal layer by heating treatment. The forming of the first wiring layer includes: forming of a titanium layer on an interlayer insulating film; forming of a metal layer containing a metal capable of forming an alloy with titanium in the titanium layer; forming of an orientation layer on the metal layer; and forming of an aluminum layer on the orientation layer.

Method of manufacturing semiconductor device and semiconductor device

A Si sputtering target that in the measurement of crystal face orientation of sputtering surface according to X-ray diffractometry, exhibits a ratio of peak intensity of (111) face (I) to peak intensity of (220) face (I) of Si, (I/I), falling within the range of 1.8&#xb1;0.3. The Si sputtering target comprises, for example, an Si sintered material of 70 to 95% relative density. With respect to sputtering films such as Si oxide film, the film thickness characteristics, film formation cost, etc. can be improved by the use of this Si sputtering target.

Sputtering target and process for producing si oxide film therewith

A method of manufacturing a tungsten sputtering target includes pressing a high purity tungsten powder to form a pressed compact, first sintering the pressed compact at a temperature of 1450-1700&#xb0; C. for one hour or longer after the pressed compact is heated at a heating-up rate of 2-5&#xb0; C./min on the way to a maximum sintering temperature, second sintering the pressed compact to form a sintered body at a temperature of 1900&#xb0; C. or higher for 5 hours or longer, working the sintered body to obtain a shape of a target, subjecting the target to a grinding work of at least one of rotary grinding and polishing, and subjecting the target to a finishing work of at least one of etching and reverse sputtering.

Tungsten sputtering target and method of manufacturing the target

A sputter target is made of a Ti&mdash;Al alloy containing Al in the range of 1 to 30 atm %. In the Ti&mdash;Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti&mdash;Al alloy is 500 &mgr;m or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti&mdash;Al&mdash;N film as a barrier film is formed by using the sputter target made of the Ti&mdash;Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.

Growing community of inventors

Koza-gun, Japan

Yukinobu Suzuki