Ulvac, Inc.

Yukinobu Numata

Koji Suzuki

Katsuaki Nakano

Junichi Hamaguchi

Shuji Kodaira

Yuta Sakamoto

Daisuke Hiramatsu

Akifumi Sano

Koukichi Kamada

Yoshiyuki Kadokura

Joji Hiroishi

A method of forming an internal stress control film on one surface of an object to be processed by a sputtering method, includes selecting a pressure of a process gas at the time of forming the internal stress control film from a pressure region higher than a threshold value of 5 (Pa) so that stress of the object to be processed when a bias is applied to the object to be processed becomes larger stress on a tensile side and the internal stress control film has higher density, as compared with stress in a case in which a bias is not applied thereto.

Method of forming internal stress control film

A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Method of manufacturing semiconductor device

Growing community of inventors

Chigasaki, Japan

Yukinobu Numata