Shibaura Mechatronics Corporation

Yukinobu Nishibe

Akinori Iso

Takashi Takahashi

Keigo Oomori

According to one embodiment, an organic film forming apparatus includes a chamber configured to maintain an atmosphere more reduced than an atmospheric pressure, at least one processing room provided inside the chamber and being surrounded by a cover, and an exhaust part configured to exhaust the inside the chamber. The processing room includes an upper heating part including first heaters, a lower heating part including second heaters, and facing the upper heating part, an upper heat equalizing plate provided on the lower heating part side of the upper heating part, a lower heat equalizing plate provided on the upper heating part side of the lower heating part, and workpiece supporters configured to support a workpiece through a gap between the upper and lower heat equalizing plates.

Organic film forming apparatus

An apparatus for processing a substrate in which the substrate is successively processed with different kinds of process solution. A spin chuck supports the substrate. A driving source rotates the spin chuck A nozzle member supplies a first process solution prepared by mixing sulfuric acid and a hydrogen peroxide solution at a predetermined mixing ratio to the substrate. A switching mechanism selects the sulfuric acid, the hydrogen peroxide solution and the second process solution supplied to the nozzle member A concentration adjusting mechanism adjusts the ratio of sulfuric acid to the hydrogen peroxide solution, which collectively form the first process solution, supplied to the nozzle member. A control device controls the supply of sulfuric acid, the hydrogen peroxide solution and the second process solution, which is switched by the switching mechanism.

Apparatus for processing substrate using process solutions having desired mixing ratios

A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

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Kamakura, Japan

Yukinobu Nishibe