Seiko Epson Corporation

Renesas Technology Corp.

Yukimune Watanabe

Shinji Migita

Nobuyuki Mise

Noriyasu Kawana

Yuuichi Kamimuta

Hiromi Ito

A single crystal substrate is provided and is characterized in that the single crystal substrate has a foundation substrate provided with a plurality of first grooves, which include a first crystal face and a second crystal face opposed to the first crystal face in an inner face thereof, and the extending direction of which is a&#x3c;110&#x3e; direction, and a plurality of second grooves, the extending direction of which intersects with the first grooves, and in which the first grooves are formed in a displaced manner in a depth direction, and a transverse cross-sectional shape of the second groove is a shape in which straight lines are open at an opening angle less than 180&#xb0;. Further, it is preferred that an angle formed by the first crystal face and the second crystal face is more than 70.6&#xb0;.

Single crystal substrate with undulating ridges and silicon carbide substrate

A single crystal substrate is provided and is characterized in that the single crystal substrate has a foundation substrate provided with a plurality of grooves, which include a first crystal face and a second crystal face opposed to the first crystal face in an inner face thereof, and the extending direction of which is a &#x3c;110&#x3e; direction, and an angle formed by the first crystal face and the second crystal face is more than 70.6&#xb0;. Further, it is preferred that the angle formed by the first crystal face and the second crystal face is 100&#xb0; or more and 176&#xb0; or less.

Method for producing single crystal substrate having a plurality of grooves using a pair of masks

A silicon carbide substrate includes a Si substrate (silicon substrate), a SiC base film (silicon carbide base film) which is stacked on the Si substrate and contains silicon carbide, a defective part (through-hole) which passes through the SiC base film, a hole which is located between the Si substrate and the SiC base film corresponding to the defective part, and an oxide film which is provided on the surface of the Si substrate in the hole and contains silicon oxide. Further, on the SiC base film, a SiC grown layer (silicon carbide grown layer) may be formed.

Silicon carbide substrate and method for producing silicon carbide substrate

A 3C-SiC epitaxial layer is produced by a production method including: epitaxially growing a first 3C-SiC layer on a Si substrate; oxidizing the first 3C-SiC layer; removing an oxide film on a surface of the 3C-SiC layer; and epitaxially growing a second 3C-SiC layer on the 3C-SiC layer after the oxide film is removed.

Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device

A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate and form a cubic silicon carbide film; and a second step of introducing a carbon-containing gas and a silicon-containing gas onto the cubic silicon carbide film while maintaining the cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide, so as to allow further epitaxial growth of the cubic silicon carbide film.

Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layers

A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask. The SiC film has a filmincluding openingson the silicon substrate and a filmprovided on the upper side of the film. The maskhas a maskprovided on the upper side of the silicon substrate and including openingsand a maskcovering at least part of the masklocated in the openingsand the side surfaces of the openingsand including openings. The width Wof the opening, the thickness T(&#x3bc;m) of the mask, and the thickness D (&#x3bc;m) of the filmat a position corresponding to the openingsatisfy the following relationships: T&#x3c;tan(54.6&#xb0;)&#xd7;W, and D&#x2267;tan(54.6&#xb0;)&#xd7;W

Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide film

A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film provided on the upper side of the Si substrate and a second SiC film provided on the upper side of the first SiC film. The mask has a first mask provided on the Si substrate and including an opening (first opening) and a second mask provided on the first SiC film and including an opening (second opening). The width W(&#x3bc;m) of the first opening and the thickness T(&#x3bc;m) of the first mask satisfy the following relationship: T&#x3c;tan(54.6&#xb0;)&#xd7;W

Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device

A method of manufacturing a semiconductor device includes forming a metal oxide on a semiconductor substrate, forming a gate electrode film on the metal oxide, and executing a thermal treatment on the semiconductor substrate provided with the metal oxide and the gate electrode film to crystallize the metal oxide.

Method of manufacturing semiconductor device and semiconductor device having oxide film crystallized by a thermal treatment

A semiconductor substrate includes: single crystal silicon; a mask material formed on a surface of the single crystal silicon and having an opening; a silicon carbide film formed on a portion exposed in the opening of the single crystal silicon; and a single crystal silicon carbide film formed so as to cover the silicon carbide film and the mask material. The mask material has a viscosity of 10Pa&#xb7;S or more and 10Pa&#xb7;S or less in a temperature range of 950 to 1400&#xb0; C.

Semiconductor substrate and method for producing semiconductor substrate

A semiconductor substrate includes: a silicon substrate; a monocrystalline silicon carbide film formed on a surface of the silicon substrate; and a stress relieving film formed on the surface of the silicon substrate opposite from the side on which the monocrystalline silicon carbide film is formed, and that relieves stress in the silicon substrate by applying compressional stress to the silicon substrate surface on which the stress relieving film is formed, wherein a plurality of spaces is present in the monocrystalline silicon carbide film in portions on the side of the silicon substrate and along the interface between the monocrystalline silicon carbide film and the silicon substrate.

Semiconductor substrate and semiconductor substrate manufacturing method

A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.

Semiconductor device and manufacturing method of the semiconductor device

A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.

Method of nickel disilicide formation and method of nickel disilicate source/drain formation

A semiconductor wafer is placed in a chamber of a film-deposition apparatus, and gas in the chamber is exhausted from a gas exhaust outlet. Then, with interrupting the exhaust, an inert gas is introduced into the chamber so that the chamber has a pressure of 133 Pa or higher and lower than 101325 Pa, and then a mixed gas of an inert gas and a source gas for depositing a metal oxide film is introduced into the chamber. Then, after exhausting the gas in the chamber, an oxidation gas is introduced into the chamber to react with the molecules of the source gas absorbed on the semiconductor wafer to form a metal oxide film on the semiconductor wafer. By repeating these steps, a metal oxide film having a desired film thickness is deposited on the semiconductor wafer with a film-thickness distribution by an ALD method.

Growing community of inventors

Hokuto, Japan

Yukimune Watanabe