Fujitsu Semiconductor Limited

Yukimasa Miyazaki

Kouichi Nagai

Kazuhiro Asai

Makoto Takahashi

Kaoru Saigoh

Hideaki Kikuchi

Katsuhiro Sato

Kaoru Sugawara

Hitoshi Saito

Masahito Kudo

Masahito Kudou

Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film.

Semiconductor device and manufacturing method thereof

After a ferroelectric capacitor is formed, an Al wiring (conductive pad) connected to the ferroelectric capacitor is formed. Then, a silicon oxide film and a silicon nitride film are formed around the Al wiring. Thereafter, as a penetration inhibiting film which inhibits penetration of moisture into the silicon oxide film, an AlOfilm is formed.

Semiconductor device suitable for a ferroelectric memory and manufacturing method of the same

A protective film () having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode () while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrO: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure () may be realized only by a simple configuration.

Semiconductor device and method of fabricating the same

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Kawasaki, Japan

Yukimasa Miyazaki