Semiconductor Energy Laboratory Co., Ltd.

Yukiko Tojo

Masayuki Kimura

A semiconductor device is manufactured by forming an oxide layer, forming an insulating layer and a sacrificial layer over the oxide layer, forming a conductive layer over the insulating layer and the sacrificial layer, and performing heat treatment after the formation of the conductive layer so that a first mixed layer is formed in a region of the oxide layer that is in contact with the conductive layer and a second mixed layer is formed in a region of the sacrificial layer that is in contact with the conductive layer. The first mixed layer includes at least one of elements included in the conductive layer. The second mixed layer includes at least one of elements included in the conductive layer. The resistance value of the first mixed layer is smaller than that of the oxide layer.

Manufacturing method of semiconductor device, manufacturing method of electronic appliance, semiconductor device, display device, memory device, and electronic appliance

Growing community of inventors

Kanagawa, Japan

Yukiko Tojo