National Institute for Materials Science

Toyota Jidosha Kabushiki Kaisha

Western Digital Technologies, Inc.

Yukiko Takahashi

Kazuhiro Hono

Takao Furubayashi

Seiji Mitani

Ye Du

Noritsugu Sakuma

Masao Yano

Hidefumi Kishimoto

Shinya Kasai

Masamitsu Hayashi

Weibin Cui

Antony Ajan

Hua Yuan

Alexander S Chernyshov

Tomoya Nakatani

Tadakatsu Ohkubo

Masaya Kodzuka

Ikhtiar

Sinha Jaivardhan

Srinivasan Ananthakrishnan

Pohan Cheng

Varaprasad Bollapragada

Rajanikanth Ammanabrolu

Jaivardhan Sinha

Shigeyuki Hirayama

Bollapragada Varaprasad

An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layeron a substrate, wherein the first ferromagnetic layerincludes a Heusler alloy, the second ferromagnetic layerincludes a Heusler alloy, the non-magnetic layerincludes a I-III-VIchalcopyrite-type compound semiconductor, and the non-magnetic layerhas a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [&#x3a9;&#x3bc;m] or more and 3 [&#x3a9;&#x3bc;m] or less.

Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is used

The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains NdFeB, a soft magnetic phase contains Fe or FeCo, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or FeCo is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of NdFeB.

Rare-earth nanocomposite magnet

The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.

Magnetoresistive element, magnetic head using magnetoresistive element, and magnetic reproducing device

The CPPGMR element of the present invention has an orientation layerformed on a substrateto texture a Heusler alloy into a (100) direction, an underlying layerthat is an electrode for magneto-resistance measurement stacked on the orientation layer, a lower ferromagnetic layerand an upper ferromagnetic layereach stacked on the underlying layerand made of a Heusler alloy, a spacer layersandwiched between the lower ferromagnetic layersand the upper ferromagnetic layers, and a cap layerstacked on the upper ferromagnetic layerfor surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.

Current-perpendicular-to-plane magneto-resistance effect element

Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1&#xd7;10erg/cmor more and the saturated magnetization is 200 emu/cmor more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Perpendicularly magnetized ultrathin film exhibiting high perpendicular magnetic anisotropy, method for manufacturing same, and application

To realize a spintronics device with high performance, it is an object of the present invention to provide a CoFe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A CoFe(GaGe) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25&#x3c;x&#x3c;0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the CoFe(GaGe) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

[object Object]

A perpendicular magnetic recording medium, comprising: a substrate; a buffer layer deposited in a first orientation on top of the substrate; an underlayer deposited in a second orientation on top of the buffer layer, the underlayer comprising an electrically conductive oxide; and a magnetic recording layer deposited on top of the underlayer and having an axis of magnetic anisotropy substantially perpendicular to the surface thereof.

Electrically conductive underlayer to grow FePt granular media with (001) texture on glass substrates

Growing community of inventors

Tsukuba, Japan

Yukiko Takahashi