Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Nippon Steel Corporation

International Superconductivity Technology Center

Hokkaido Electric Power Company, Inc.

Yukihisa Yoshida

Tamotsu Nishino

Kenichi Miyaguchi

Kazuhiko Tsutsumi

Moriyasu Miyazaki

Munehito Kumagai

Jiwei Jiao

Sangseok Lee

Tadashi Takagi

Masatake Hangai

Yoshiaki Hirata

Nobuaki Konno

Morishige Hieda

Tadataka Morishita

Eiji Yoshikawa

Yoshiyuki Suehiro

Wataru Ito

Tsukasa Matsuura

Jyunichi Ichikawa

Takahiko Ito

Shinnosuke Soda

Teruki Naito

Shinichi Izuo

Akira Yamashita

Yukihiro Honma

Norio Homma

Hiromoto Inoue

Shingo Yamaura

Mikio Hatamoto

Yuichiro Fukuma

Hayato Ogino

Hideki Hatakeyama

Norihiro Yunoue

Motohisa Taguchi

Martial Chabloz

In a mirror driving apparatus, a pair of beam portions includes: a pair of first beams directly adjacent to a reflector to sandwich the reflector between the first beams; and a pair of second beams each coupled to one side of a corresponding one of the first beams, the one side being opposite to the reflector with respect to the corresponding one of the first beams. A plurality of electrodes are spaced from each other on a main surface of each of the first beams, a piezoelectric material being interposed between the main surface and the plurality of electrodes. The first beams are displaceable crosswise to the main surface in respective directions opposite to each other. The pair of second beams is displaceable in a direction connecting the first beams and the second beams, along the main surface of the second beams.

Mirror driving apparatus and method for manufacturing thereof

Each of a plurality of ceramic substrate members includes a via reaching an other main surface from one main surface. A gap is formed in each of first and second ceramic substrate members of the plurality of stacked ceramic substrate members to penetrate each of the first and second ceramic substrate members, the first ceramic substrate member being arranged at an outermost surface on one side in a stacking direction of the ceramic substrate members, the second ceramic substrate member being arranged at an outermost surface on the other side opposite to the one side in the stacking direction. At least a portion of a side surface and a bottom surface within the gap are covered with a protection layer. The protection layer is made of a material having an etching rate lower than that of the ceramic substrate members.

Ceramic substrate and method for manufacturing the same

An antenna device includes a ground conductor (), a dielectric tube () containing an ionizing gas and passing through the ground conductor, whose folded-back portion () and both ends are disposed in different sides of the ground conductor, first electrodes () disposed at both ends of the dielectric tube (), a plasma excitation power supply connected to the first electrodes, bringing the ionizing gas into a plasma state; a second electrode () ring-shaped and disposed at the both ends side of dielectric tube () from the ground conductor (), fitted to and in contact with the dielectric tube outer surface, a high frequency transmitter () supplying a high frequency signal to the second electrode (), and a feed line () connecting the second electrode and the high frequency transmitter. Each end of the dielectric tube () is larger than the second electrode in the inner diameter.

Antenna device

In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer () and an active layer wafer () which are bonded together with an oxide film () therebetween, each of the support wafer () and the active layer wafer () being a silicon wafer; a cavity () formed in a bonding surface of at least one of the silicon wafers; and a gettering material () formed on a surface on a side opposite to the bonding surface.

SOI wafer, manufacturing method therefor, and MEMS device

There is provided a variable device circuit according to the present invention, including: a substrate; at least one movable switch device formed on a first principal surface of the substrate; at least one fixed capacitor device formed on the first principal surface of the substrate; at least one variable capacitor device formed on the first principal surface of the substrate; at least one variable inductor device formed on the first principal surface of the substrate; and wiring lines for electrically connecting the devices to one another, the wiring lines being formed on the first principal surface of the substrate; wherein electrical connections among the devices can be selected by operation of the movable switch device, whereby achieving stable, low-loss circuit characteristics with lower manufacturing cost.

Variable device circuit and method for manufacturing the same

A semiconductor pressure sensor comprises a silicon support substrate (), an insulating layer () formed on the silicon support substrate (), and a silicon thin plate () formed on the insulating layer (). A through-hole () extending in the thickness direction of the silicon support substrate () is formed in the silicon support substrate (). The silicon thin plate () located on an extension of the through-hole () functions as a diaphragm () that is deformed by an external pressure. The insulating layer () remains over the entire lower surface of the diaphragm (). The thickness of the insulating layer () decreases from the peripheral portion toward the central portion of the diaphragm (). This provides the semiconductor pressure sensor capable of reducing both the offset voltage and the variation of output voltage caused by the variation of temperature and its fabrication method.

Semiconductor pressure sensor and its fabrication method

A phase-shifting circuit includes: a first parallel circuit which is connected across input and output terminals of a high frequency signal, composed of a first inductor and a first switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the first switching element is in the OFF state; a series circuit composed of a second inductor and a third inductor and connected in parallel with the first parallel circuit; a capacitor having its first terminal connected to a point of connection of the second and third inductors; and a second parallel circuit which is connected across a second terminal of the capacitor and a ground, composed of a fourth inductor and a second switching element that exhibits a through state in an ON state and a capacitive property in an OFF state, and produces parallel resonance at a prescribed frequency when the second switching element is in the OFF state. The phase-shifting circuit establishes by switching an operation mode of setting the first switching element at the ON state and the second switching element at the OFF state, or an operation mode of setting the first switching element at the OFF state and the second switching element at the ON state.

Phase-shifting circuit and multibit phase shifter

Provided is a small-size phase shift circuit having a broad band characteristic. The phase shift circuit includes: a first switching element for switching between a through path and a capacitance capacity; a second switching element for switching the capacitance capacity for the through path and the ground; and a first and a second inductor having inductance. One end of the first switching element is connected to one end of the second switching element by the first inductor while the other ends of the first and the second switching element are connected to each other by the second inductor. One end of the first switching element is connected to a high-frequency signal input terminal while the other end of the first switching element is connected to a high-frequency signal output terminal. Thus, it is possible to constitute a phase device satisfying a predetermined condition.

Phase shift circuit, high frequency switch, and phase shifter

In a signal processing apparatus for transmitting or processing a signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

Method of manufacturing signal processing apparatus

A first rectangular groove having a rectangular cross section and a second rectangular groove substantially orthogonal to the first rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third rectangular groove located at a position facing the first rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second rectangular groove, so that the frequency conversion device is located where the first and second rectangular grooves are orthogonal to each other. Further, the first silicon substrate on which the device substrate is located is bonded to the second silicon substrate, so that the first rectangular groove opposes the third rectangular groove, forming a rectangular waveguide which includes the first rectangular groove and the third rectangular groove, and in which a received high frequency signal propagates and is incident on the frequency conversion device.

Silicon substrate apparatus and method of manufacturing the silicon substrate apparatus

In a high frequency apparatus for transmitting or processing a high frequency signal, a substrate has a recessed portion in a surface of the substrate, a first interconnecting conductor is on the substrate, including at least the recessed portion of the substrate, and a dielectric support film is on the substrate opposite the recessed portion of the substrate with an air space between the dielectric support film and the substrate. A second interconnecting conductor is on a part of a surface of the dielectric support film. The high frequency apparatus has a simple structure and reduced transmission loss and can be made in a simple manufacturing process.

High frequency apparatus for transmitting or processing high frequency signal

A silicon device includes an insulating substrate having a recess on the surface of the substrate, and a beam-like structure made of silicon on the front surface of the insulating substrate, surrounds the recess. The beam-like structure includes at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The silicon device also includes a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least in a portion directly opposite the cantilever. The conductive film prevents the insulating substrate from being charged, thereby significantly suppressing damage of the beam-like structure during dry etching.

Silicon device

An inertia force sensor with a damper. The damper includes a cantilever for a movable part disposed in a movable electrode protruding therefrom, and a cantilever for a fixed part disposed in a support portion for the movable part or a support portion for the fixed part and protruding therefrom. The damper allows the cantilever for the movable part and the cantilever for the fixed part to contact each other before the movable electrode contacts the support portion for the movable part and the support portion for the fixed part. As a result, it is possible to prevent a stopper from being damaged and to improve the reliability of the sensor.

Inertia force sensor

A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in shape and dimensions, the micro device has improved reliability and an improved degree of freedom in design.

Growing community of inventors

Tokyo, Japan

Yukihisa Yoshida