Tokyo Ohka Kogyo Co., Ltd.

Yukihisa Wada

Kazuhiro Takahashi

Daijiro Mori

Takuya Ohhashi

Shinya Koga

Mai Sugawara

Natsumi Okawa

A chemical solution used for cleaning or etching a ruthenium-containing layer, which can obtain the ruthenium-containing layer having a reduced surface roughness while maintaining a good etching rate against the ruthenium, and a method for fabricating ruthenium wiring. The chemical solution includes orthoperiodic acid, a base component, and any one of a nitrogen-containing heterocyclic compound, an organic phosphonic acid, and an organic carboxylic acid.

Chemical solution used for cleaning or etching ruthenium-containing layer and method for fabricating ruthenium wiring

A method for producing a semiconductor element and a chemical solution to be used in the method for producing a semiconductor element, the method including dry-etching or chemically-mechanically polishing a ruthenium-containing layer located as an uppermost layer of a substrate; and bringing a surface of the substrate into contact with a chemical solution thereby satisfactorily cleaning and removing a ruthenium residue formed on the surface of the substrate; and a chemical solution to be suitably used in the method for producing a semiconductor element.

Method for producing semiconductor element and chemical solution to be used in method for producing semiconductor element

A ruthenium-etching solution for carrying out an etching process on ruthenium. The etching solution includes orthoperiodic acid and ammonia, in which a pH is 8 or higher and 10 or lower. A method for manufacturing the ruthenium-etching solution, a method for processing an object to be processed including carrying out an etching process on an object to be processed including ruthenium using the ruthenium-etching solution, and a method for manufacturing a ruthenium-containing wiring.

Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring

A method for manufacturing a ruthenium wiring including (i) treating a metal surface including ruthenium using a first chemical solution including a compound having a functional group capable of coordinating to a ruthenium atom, and (ii) carrying out an etching treatment on the metal surface including ruthenium treated with the first chemical solution, using a second chemical solution.

Method for manufacturing ruthenium wiring

An etching solution for selectively performing an etching process on a compound represented by General Formula SiGe, in which x is more than 0 and less than 1, with respect to Si, Ge, and oxides thereof, the etching solution including hydrofluoric acid, nitric acid, and water, in which a content ratio of the hydrofluoric acid in the entire etching solution is 0.002% by mass or more and 1.0% by mass or less, a content ratio of the nitric acid in the entire etching solution is 10% by mass or more, and a content ratio of the water in the entire etching solution is 40% by mass or less.

Etching solution and method for manufacturing semiconductor element

A SiGe compound etching solution for selectively etching a compound represented by general formula SiGe(provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

Growing community of inventors

Kawasaki, Japan

Yukihisa Wada