Shimadzu Corporation

Matsushita Electric Industrial Co., Ltd.

Osaka University

Other

Panasonic Corporation

Mitsubishi Electric Corporation

Tohoku-microtec Co., Ltd.

Yukihisa Wada

Satoshi Sano

Akira Horiba

Satoshi Tokuda

Koichi Tanabe

Toshinori Yoshimuta

Takahiro Doki

Hiroyuki Kishihara

Naoki Morimoto

Taro Shirai

Kenji Kimura

Naoji Moriya

Takuro Izumi

Heiji Watanabe

Kenji Takubo

Takayoshi Shimura

Takuji Hosoi

Shinichiro Totoki

Yuzo Nagumo

Fujio Inoue

Naofumi Sakauchi

Masahiro Takebe

Michikazu Matsumoto

Masayuki Watanabe

Yasuyuki Nakagawa

Muneaki Mukuda

Makoto Motoyoshi

Haruo Shimaoka

Yoshio Tsunazawa

Masaru Kinugawa

Toru Yamaguchi

Satoshi Kume

Sonoko Umemura

Shinichro Totoki

Makiko Masutomi

Nobukazu Hayashi

c/o Shimadzu Corporation Corporation

The X-ray imaging device () is provided with an X-ray source (), a plurality of gratings, a moving mechanism (), and an image processing unit (). The image processing unit () is configured to generate a phase-contrast image () by associating a pixel value in each pixel of a subject (T) in a plurality of subject images () with phase values of a Moire fringe () at each pixel and aligning the pixel of the subject of the same position in the plurality of subject images.

X-ray imaging device

In this X-ray phase imaging apparatus, at least one of a plurality of gratings is composed of a plurality of grating portions arranged along a third direction perpendicular to a first direction along which a subject or an imaging system is moved by a moving mechanism and a second direction along which an X-ray source, a detection unit, and a plurality of grating portions are arranged. The plurality of grating portions are arranged such that adjacent grating portions overlap each other when viewed in the first direction.

X-ray phase imaging apparatus

The X-ray imaging device () is provided with an imaging system (CS) including an X-ray source (), a detector (), and a plurality of gratings, a moving mechanism (), a position information acquisition unit (), and an image processing unit () for generating a phase-contrast image () in a tomographic plane by acquiring a phase distribution in a tomographic plane () based on a plurality of X-ray images () and the acquired tomographic position (z+jd).

This X-ray phase imaging system () includes an X-ray source (), a detector (), a first grating group (), a second grating group (), a moving mechanism (), and an image processing unit (). The moving mechanism is configured to relatively move a subject (T) and the imaging system () such that the subject (T) passes through a first grating region (R) and a second grating region (R). The image processing unit is configured to generate a first phase-contrast image () and a second phase-contrast image ().

X-ray phase imaging system

An X-ray phase imaging method includes a step of correcting a gradation that occurred along an orthogonal direction to a translation direction as viewed from an optical axis direction of X-rays in a phase-contrast image based on a distribution state of the gradation.

X-ray phase imaging method

In an X-ray imaging apparatus an image processor is configured to generate a phase contrast image based on a plurality of first images acquired by a first detection region (R) at a plurality of relative positions of the first detection region with respect to a subject (T) to be imaged, and to generate an absorption image based on a plurality of second images acquired by a second detection region (R) at a plurality of relative positions of the second detection region with respect to the subject.

X-ray imaging apparatus

Provided is a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject. According to the present invention, it is possible to provide a radiation imaging apparatus capable of performing precise imaging without performing pre-imaging in the absence of a subject immediately before. That is, the apparatus of the present invention is provided with a phase gratingprovided with a subject area and a reference area. Both areas each have a predetermined pattern that absorbs radiation, but the patterns are different from each other. In this area, an image of the phase gratingis observed in a moire pattern of a long period. This moire image of a long period changes in the positions due to the minute change in the relative position between the phase gratingand the absorption grating, so it becomes possible to detect the minute change of the relative position between the radiation source, the phase grating, and the absorption gratingfrom the image of the reference area.

X-ray phase contrast imaging apparatus

This X-ray phase contrast imaging apparatus () includes an X-ray source () that radiates continuous X-rays, a first grating () that forms a self-image, a second grating (), a detector () that detects the continuous X-rays, and a third grating () arranged between the detector () and the first grating. The first grating (), the second grating (), and the third grating () are arranged so as to satisfy conditions of predetermined formulas.

An X-ray phase contrast imaging device of the present invention can change an arrangement pitch of slits related to a multi-slit and an arrangement pitch of phase shift sections related to a phase grating. A positional relationship among the multi-slit, the phase grating, and an FPD is determined based on the arrangement pitch of the slits related to the multi-slit, the arrangement pitch of the phase shift sections related to the phase grating, and an arrangement pitch of detection elements related to the FPD. Among these arrangement pitches, by changing the arrangement pitch of the slits and the arrangement pitch of the phase shift sections, the present invention can change the positional relationship among the multi-slit, the phase grating, and the FPD.

Radiation phase contrast imaging device

The method of producing this diffraction grating includes a step of generating a moire by a periodic pattern projected onto a plurality of unit diffraction gratings and a plurality of unit diffraction gratings, and a step of adjusting so that the extending directions of the gratings are aligned by relatively rotating at least one of a plurality of unit diffractions with respect to at least one of the others of the plurality of unit diffractions.

Method of producing diffraction grating

In a method for manufacturing a radiation detector, counter pixel electrodesare formed on a counter substrateat positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodesare further formed on the counter pixel electrodes. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes. The bump electrodesare cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.

Semiconductor device and semiconductor detector, methods for manufacturing same, and semiconductor chip or substrate

In a radiation detector, a Schottky electrode is formed such that an interdiffusion coefficient between the material of an outermost surface electrode formed on the Schottky electrode and the material of the Schottky electrode is smaller than an interdiffusion coefficient between the material of the outermost surface electrode and Al (aluminum). Consequently, the material of the outermost surface electrode does not diffuse into the Schottky electrode, and Schottky functions can be maintained, and at the same time, the material of the Schottky electrode does not diffuse into the outermost surface electrode, and the outermost surface electrode can be prevented from alloying.

Semiconductor detector

To obtain a resin type identification method and a resin type identification apparatus with which an optimum infrared reflection spectrum for identifying a resin piece can be selected and accurate identification processing can be performed successively on individual resin pieces even when the resin pieces are identified using a single optical detector, at least one identifying signal power is selected by executing signal processing on the basis of signal powers corresponding to infrared reflection intensities obtained by emitting infrared light onto the resin piece, and the resin type of the resin piece is identified on the basis of an infrared reflection spectrum corresponding to the selected identifying signal power.

Resin type identification method and resin type identification apparatus

A distribution of AC electric field regularly arranged in a cell is formed while storing a sample having particles dispersed in a medium in the cell, whereby the particles are dielectrically migrated in the medium to generate a diffraction grating by density distribution of the particles. Diffracted light generated by irradiating the diffraction grating by density distribution with measuring light is detected, and evaluation of dielectrophoretic intensities of the particles and/or the medium is performed from the detection result. According to this method, evaluation of dielectrophoretic characteristics can be performed without adhering a phosphor to particles, and since even a particle small in size can achieve a detection level by collecting a number of such particles to form a diffraction grating, dielectric characteristics of microparticles of several nanometers in diameter can be thus quantitatively measured with high sensitivity.

Method and apparatus for evaluating dielectrophoretic intensity of microparticle

A dielectric sheetis arranged between a pair of electrodesandfor forming an electric field in a cellthat stores therein a sample having particles dispersed movably in a medium, the dielectric sheetbeing formed to include multiple mutually parallel slitsto form a diffraction grating, and a parallel light flux is applied to the diffraction grating to generate diffracted light. A gradient electric field in the vicinity of the slitsgenerated by applying a voltage between the electrodesandcauses the particles P to migrate in such a manner as to cover the slitsor away from the slitsand thereby the contrast of the diffraction grating to vary, and whereby the diffusion coefficient and/or size of the particles P can be calculated from the temporal change of the diffracted light when the particles diffuse freely after stopping the application of the voltage. In this measurement apparatus, the particles P might not migrate toward the electrodesandand are not absorbed there, which can prevent damage of the electrodesandand also the occurrence of an electrode reaction.

Growing community of inventors

Kyoto, Japan

Yukihisa Wada