Sony Corporation

Yukihisa Hitsuda

Junichi Sato

Kazushi Nakano

Michinori Shiomi

Toshio Fujino

A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about &#xbc; of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 &#x3bc;m to about 18 &#x3bc;m in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.

Growing community of inventors

Kanagawa, Japan

Yukihisa Hitsuda