Megachips Corporation

Other

Crystal Device Corporation

Technology Hub Inc.

Nontendo Co., Ltd.

Yukihiro Ukai

Takashi Sawada

Tetsuo Hikawa

Akira Takata

Masahiro Shindo

Toshifumi Asakawa

Daisuke Kosaka

Eizi Kawai

Kenichi Mae

Motoyasu Tanaka

Yusuke Nara

Takashi Tsuchitani

A light receiving element includes a first semiconductor layer of a first conductivity type to which a first potential is to be applied, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, first and second regions of the first conductivity type formed in an upper portion of the second semiconductor layer, a first electrode that is located on the first region and is to be subjected to application of a second potential, a second electrode located on the second region, an insulation layer formed on the second semiconductor layer between the first and the second regions, and a gate electrode that is formed on the insulation layer and is to be subjected to application of a gate voltage. A current readout unit detects, as a pixel signal reflecting an amount of light received, a current flowing from the first region to the second region.

Image sensor

An image processing system includes an image coding device serving as a host device that outputs image data, and an image decoding device serving as a client device and including a display part that displays an image based on image data transmitted from the image coding device. The image coding device includes an image quality controller that controls the image quality of an image displayed on the display part in accordance with an operation status A of the image processing system. When the operation status is a status under which a delay of displaying an image which is caused by transmission of image data from the image coding device to the image decoding device is allowed, the image quality controller increases the image quality of an image displayed on the display part.

Image processing system, method of operating image processing system, host apparatus, program, and method of making program

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer ( ) of a single-crystalline Si substrate ( ) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer ( ) is converted to such orientation that the (111) plane is upwardly directed. A masking member ( ) is employed as a shielding member to anisotropically etch the substrate ( ) from its bottom surface, thereby forming a V-shaped groove ( ). At this time, the uppermost layer ( ) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Semiconductor device and method of fabricating the same

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (,) of a single-crystalline Si substrate (,) whose (,) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (,) is converted to such orientation that the (,) plane is upwardly directed. A masking member (,) is employed as a shielding member to anisotropically etch the substrate (,) from its bottom surface, thereby forming a V-shaped groove (,). At this time, the uppermost layer (,) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Semiconductor device having a single crystal gate electrode and insulation

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (,) of a single-crystalline Si substrate (,) whose (,) plane is upwardly directed is irradiated with Ne atoms currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (,) is converted to such orientation that the (,) plane is upwardly directed. A masking member (,) is employed as a shielding member to anistropically etch the substrate (,) from its bottom surface, thereby forming a V-shaped groove (,). At this time, the uppermost layer (,) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Field-effect thin-film transistor device

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.

Micromachine manufacture using gas beam crystallization

Photovoltaic device

A decoding speed is improved. A processing method is changed in variable length decoders depending on whether only one piece of data is to be decoded or two or more pieces of data are to be decoded, thereby suppressing an increase in the size of hardware as much as possible and increasing a processing speed. Although irregular data are created in the first cycle when a large scale decoder having a slow processing speed processes data, a delay apparatus delays data which include the irregular data and data which are supplied from the large scale decoder without a delay are filled in the irregular data portion. As a result, the irregular portion of the data is compensated for and a relative delay of the processing is prevented.

Growing community of inventors

Suita, Japan

Yukihiro Ukai