Denso Corporation

Nippondenso Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Yukihiro Takeuchi

Kazuhiko Kano

Toshimasa Yamamoto

Junji Oohara

Kenichi Ao

Minekazu Sakai

Tsuyoshi Fukada

Hiroshi Muto

Takao Iwaki

Masakazu Kanosue

Takamoto Watanabe

Minoru Murata

Hiroyuki Wado

Yoshinori Ohtsuka

Hirofumi Uenoyama

Tetsuo Yoshioka

Tadashi Hattori

Kazushi Asami

Toshiyuki Morishita

Seiki Aoyama

Shinji Yoshihara

Akihiko Teshigahara

Seiji Fujino

Nobuaki Kawahara

Tomoki Tanemura

Hiroshige Sugito

Shuichi Yamashita

Yasutoshi Suzuki

Inao Toyoda

Takahiko Yoshida

Makiko Sugiura

Shigeyuki Akita

Toshio Yamamoto

Morito Akiyama

Kazuhiko Sugiura

Seiichiro Ishio

Yasushi Kohno

Hirofumi Higuchi

Kenichi Yokoyama

Hirotane Ikeda

Yasushi Goka

Naohiro Ueno

Eishi Kawasaki

Yoshitaka Gotoh

Megumi Suzuki

Shigeru Nonoyama

Yoshitaka Noda

Junji Ohara

Koichi Goto

Masakazu Terada

Shoji Ozoe

Hisaya Katoh

Toshihiro Kamohara

Yukihiro Sano

Makiko Fujita

Kenichi Nara

Yositugu Abe

Kazuhiko Kanou

Kozo Shibata

A Fabry-Perot interferometer includes an input mirror and an output mirror arranged facing the input mirror via a gap. Each mirror includes a pair of high-refractive layers and a space layer arranged selectively between the high-refractive layers. At least one of an input-side bridge part and an output-side bridge part arranged crossing the gap, is movable as a membrane. Each bridge part includes a transmission portion and a periphery portion. Each transmission portions includes a mirror element in which the space layer is sandwiched by the pair of high-refractive layers. In a second direction perpendicular to the first direction, the mirror element of the input mirror has a width larger than seven times of a maximum wavelength of a transmission light output from the output mirror, and functions as a diffraction restriction mirror.

Fabry-Perot interferometer

An optical waveguide sensor includes a substrate and an optical waveguide. The optical waveguide includes a core and a lateral clad. The core extends in a spiral shape above a surface of the substrate. The lateral clad is disposed in a same layer as the core above the surface of the substrate and is in contact with either side surfaces of the core. At least a part of a surface of the core located opposite from the substrate is a transmission surface from which light leaks and is absorbed by a detected object.

Optical waveguide sensor and manufacturing method of the same

A Fabry-Perot interferometer includes a fixed mirror structure and a movable mirror structure. The fixed mirror structure has a fixed mirror in a spectral region. The movable mirror structure includes a membrane spaced from the fixed mirror structure. The membrane has a movable mirror in the spectral region and multiple springs arranged one inside the other around the spectral region. A spring constant of the inner spring is less than a spring constant of the outer spring. One of the fixed mirror structure and the membrane has multiple electrodes, and the other of the fixed mirror structure and the membrane has at least one electrode that is paired with the electrodes to form opposing electrode pairs arranged one inside the other around the spectral region. The number of the opposing electrode pairs is equal to the number of the springs.

Fabry-perot interferometer having an increased spectral band

A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

Method of manufacturing the optical device by a stopper to form an oxide block

A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.

Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film

An optical device includes a silicon substrate, and multiple columnar members. The columnar members are integrally formed with the silicon substrate and stand on a top surface of the silicon substrate. The columnar members are made of silicon oxide. Light enters the columnar members in a first direction and propagates through the columnar members in a second direction. The columnar members extend in a third direction. The columnar members are arranged with a gap in the second direction. The second direction is perpendicular to the third direction. An angle between the first and third directions is greater than a critical angle and equal to or less than 90 degrees.

Optical device

A method for manufacturing an optical device having an optical block, through which a light is transmitted, is provided. The method includes steps of: forming a plurality of silicon oxide members, which is disposed on a silicon substrate, wherein the silicon oxide members are arranged in parallel each other by a predetermined clearance between two adjacent silicon oxide members; and pouring a super critical fluid into the clearance so that the clearance is filled with a product formed from a predetermined compound for forming the optical block, wherein the predetermined compound is dissolved in the super critical fluid.

Method for manufacturing optical device

A method for manufacturing a physical quantity sensor having a movable portion, a support portion and an optical part is provided. The method includes steps of: etching a silicon substrate so that a movable-portion-to-be-formed portion, a support-portion-to-be-formed portion, and an optical-part-to-be-formed portion having a plurality of columns and trenches are formed; oxidizing the optical-part-to-be-formed portion so that each column changes to a silicon oxide column and the trench is filled with a silicon oxide layer; and removing a part of the movable-portion-to-be-formed portion connecting to the silicon substrate so that the movable portion is separated from the silicon substrate.

Physical quantity sensor having optical part and method for manufacturing the same

A method for manufacturing an optical device is provided. The device includes an optical waveguide path having a Bragg grating and a movable portion disposed near the Bragg grating. A displacement of the movable portion provides a change of spacing of the Bragg grating so that a light passing through the optical waveguide path is changed. The optical device detects the physical quantity based on a change of the light. The method includes steps of: forming the optical waveguide path with the Bragg grating on a first part of a silicon substrate; and forming the movable portion on a second part of the silicon substrate.

Optical device and method for manufacturing the same

An acceleration sensor includes: a semiconductor substrate including a support layer and a semiconductor layer, which are stacked in a first direction; a movable electrode and a fixed electrode; and a trench. The movable electrode separately faces the fixed electrode by sandwiching the trench along with a second direction. The trench has a detection distance in the second direction. The movable electrode is movable along with the first direction when acceleration is applied. The movable electrode has a bottom apart from the support layer. The width of the movable electrode along with the second direction is smaller than the width of the fixed electrode. The thickness of the movable electrode along with the first direction is smaller than the thickness of the fixed electrode.

Acceleration sensor and method for manufacturing the same

A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Method for manufacturing movable portion of semiconductor device

A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

Capacitance type physical quantity sensor

A scanning apparatus includes a mirror coupled to a base via a spring portion, and a light source for emitting a beam toward a reflecting surface of the mirror so that the beam is incident thereon. The mirror reflects the beam from the light source and rotationally swings under a resilient force of the spring portion when a force is applied thereto. The reflecting surface of the mirror includes a plurality of mirror surfaces at different angles. The beam from the light source is simultaneously reflected by the mirror surfaces at different angles.

Scanning apparatus

An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as WThe cavity has a width defined as WA ratio of W/Wbecomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen &#x3bc;m easily. Therefore, connection loss between a light source and the device is reduced.

Optical device having optical waveguide and method for manufacturing the same

The method of detecting the hydrogen concentration by using a first heat-generating resistor of which a first electrophysical quantity varies depending upon the hydrogen concentration and a second heat-generating resistor which is neighboring said first heat-generating resistor in a direction of gas flow and of which a second electrophysical quantity varies depending upon the hydrogen concentration as does the first electrophysical quantity, to detect the concentration of hydrogen based on the first electrophysical quantity and the second electrophysical quantity, the method comprising: calculating the amount of change in a target physical quantity, which is either the first electrophysical quantity or the second electrophysical quantity, calculating the correction amount based on a difference between the first electrophysical quantity and the second electrophysical quantity, and a calculating the concentration of hydrogen based on a difference between the amount of change in the target physical quantity and the correction amount.

Device for detecting hydrogen concentration and method of detecting hydrogen concentration

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Nishikamo-gun, Japan

Yukihiro Takeuchi