Sanyo Electric Co., Ltd.

Sanyo Electronic Co., Ltd.

Yukihiro Noguchi

Shoichiro Matsumoto

Yoshiyuki Ishizuka

Daisuke Ide

Naoya Sotani

Junka Kaya

Shinichi Takatsuka

Isao Hasegawa

Yoichiro Aya

Hiroshi Tsuchiya

Akifumi Sasaki

Yasutaka Kobayashi

A display device includes a plurality of sub-pixels configured to display a plurality of colors including white. Each of the sub-pixels includes a self-luminous element configured to emit light by receiving supply of electric current, an input unit configured to input a luminance signal for determining luminance of the self-luminous element into the sub-pixel, and a control unit configured to control the supply of electric current to the self-luminous element. An area of light emission in each of the sub-pixels for the white is larger than an area of light emission in each of the sub-pixels for the other colors.

Display device

A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.

Display capable of inhibiting instable operation of a transitor resulting from fluctuation of the potential of a corresponding shielding film

A characteristic of a driving transistor which drives a diode is made to differ in terms of current driving capability from that of a switching transistor. The current driving capability of the driving transistor is made lower than that of the switching transistor.

Display apparatus in which characteristics of a plurality of transistors are made to differ from one another

A signal line drive circuit and a scanning line drive circuit are capable of being driven bidirectionally. A display apparatus includes a plurality of signal paths each of which transmit a signal outputted from a final-stage circuit thereof when the signal line circuit and/or the scanning line circuit is driven in a forward or reverse direction, and output paths formed by connecting the plurality of signal paths. There are provided a buffer unit and a switching element in each of the plurality of signal paths, and there is provided a buffer unit in each output path. Each of the switching elements in the plurality of signal paths is turned on according to a drive direction in the signal line drive circuit and/or the scanning line drive circuit, and then a target signal is selected and outputted to the output paths.

Signal transmission circuit and display apparatus

In a display apparatus, a first data control circuit, a second data control circuit, a first selection control circuit and a second selection control circuit, all disposed in the periphery of a display region, and a power supply region are formed in a manner such that at least part of the first data control circuit, second data control circuit, first selection control circuit and second selection control circuit is overlapped with the power supply region. The power supply region and a cathode region are provided over a large area in a layer or layers different from the above-mentioned circuits disposed in the periphery of the display region.

Display apparatus where voltage supply region and control circuit therein are stacked

The source of a p-channel MOSFET of a level conversion unit is connected to a supply terminal which receives supply voltage VDD. The drain is connected to an output node NO and the gate is connected to an input node I. The source of a n-channel MOSFET is connected to an input node I, the drain is connected to the output node NO and the gate is connected to the supply terminal which receives the supply voltage VDD. Input signals CLKand CLKchange complementarily and difference of voltage between the high level and low level of the signals is smaller than difference between the supply voltage VDD and the ground voltage.

Level conversion circuit

An active matrix display capable of reducing power consumption and preventing an operation failure when switching the operation of a level shifter is obtained. In this active matrix display, a level shifter operating in a time-divisional manner is formed by a level conversion circuit converting a signal voltage level, a control circuit generating a control signal deciding an operating period of the level shifter and a switching circuit supplying a power supply voltage to the level conversion circuit in response to the control signal. Thus, the operating period of the level shifter is readily controlled, for stopping operation of an unnecessary circuit part. Consequently, power consumption can be reduced. When the control circuit generating the control signal deciding the operating period of the level shifter is employed for overlapping operating periods of adjacent level shifters, an operation failure such as an inoperable state of a next-stage latch circuit resulting from delay or the like is prevented when switching the operation of the level shifter.

Active matrix display

An organic EL device is fabricated by a novel method to reduce the decrease or the dispersion of the luminance of the organic EL device caused by the voltage drop. A display apparatus comprises: optical elements; a power supply line which supplies electrical energy to each of the optical elements; and a signal line which transmits a control signal to each of the optical elements. The resistance of the power supply line is lower than the resistance of the signal line. The cross section of the power supply line may be enlarged, or the resistivity of the constitutional material of the power supply line may be lowered to lower the resistance of the power supply line.

Display apparatus

A method of fabricating a semiconductor device capable of fabricating a semiconductor device including a polycrystalline semiconductor film having excellent characteristics with a high yield is provided. A first amorphous semiconductor film is formed on a substrate. A conductive film is formed on the first amorphous semiconductor film. The conductive film is irradiated with an electromagnetic wave such as a high-frequency wave or a YAG laser beam thereby making the conductive film generate heat and converting the first amorphous semiconductor film to a first polycrystalline semiconductor film through the heat. Thus, polycrystallization is homogeneously performed without dispersion through the heat from the conductive film irradiated with the electromagnetic wave. Consequently, an excellent first polycrystalline silicon film can be formed with an excellent yield.

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Gifu, Japan

Yukihiro Noguchi