Canon Kabushiki Kaisha

Olympus Corporation

Canon Kabushiki Kaha

Yukihiro Kuroda

Takanori Watanabe

Hideo Kobayashi

Kazuhiro Saito

Keiichi Mori

Yuichi Gomi

Seisuke Matsuda

Daisuke Inoue

Kouji Maeda

Masahiro Kobayashi

Hidekazu Takahashi

Tatsuhito Goden

Masaaki Iwane

Tomohisa Kinugasa

Yasuharu Ota

Masanori Ogura

Akinari Takagi

Yoshikazu Yamazaki

Satoshi Kato

Tomoya Sasago

Kazuo Yamazaki

Mahito Shinohara

Tetsunobu Kochi

Satoshi Suzuki

Koichiro Iwata

Hajime Ikeda

Shintaro Takenaka

Tatsuya Ryoki

Kazuhiro Sonoda

Hidetoshi Hayashi

Kazuhiro Morimoto

Yasushi Nakata

Chun-Hung Lien

Dong-Yang Lin

Tomoki Kususaki

Ching-Hsung Wang

Taishin Yoshida

A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

Photoelectric conversion apparatus and imaging system

A photoelectric conversion apparatus includes: a first substrate including an avalanche photodiode; and a second substrate, in which the first substrate and the second substrate are stacked on each other, and further includes: a temperature detection unit arranged in at least one of the first substrate and the second substrate and having an output characteristic depending on a temperature; and a temperature value generating circuit arranged outside the first substrate and configured to convert output from the temperature detection unit into a temperature value signal that is a signal indicating temperature information.

Photoelectric conversion apparatus, photo-detection system, and movable body

Provided is a semiconductor device including: first signal generation units arranged so as to form rows and columns and corresponding to pixels configured to output a signal in response to incidence of light, each of the first signal generation units being configured to output a first digital signal in response to an output from a corresponding pixel; second signal generation units arranged corresponding to at least a part of the rows and the columns, each of the second signal generation units being configured to output a second digital signal having a predetermined digital value; and a readout unit configured to output a signal based on at least one of the first digital signal and the second digital signal that is output from a selected part of the first signal generation units and the second signal generation units.

Semiconductor device having first signal generation units that output a first digital signal in response to an output of a corresponding pixel and second signal generation units that output a second digital signal having a predetermined digital value

A photoelectric conversion device includes an avalanche multiplying photodiode, a signal generation unit that includes a control unit configured to control an applied voltage to the photodiode and generates a photon detection pulse based on an output generated by incidence of a photon to the photodiode, and a counter that counts the photon detection pulse output from the signal generation unit, and the counter outputs a setting value detection signal when a count value of the photon detection pulse reaches a predetermined setting value, and in response to receiving the setting value detection signal, the control unit controls the applied voltage to the photodiode so as to stop generation of an avalanche current in the photodiode.

Photoelectric conversion device, method of driving photoelectric conversion device, imaging system, and moving body

A photoelectric conversion apparatus includes a pixel and a counter circuit. The pixel includes a first avalanche photodiode and a second avalanche photodiode having different sensitivity to light. The counter circuit is configured to count a first signal based on charges generated in the first avalanche photodiode, and a second signal based on charges generated in the second avalanche photodiode. Processing on the count value is different between a case where a count value output from the counter circuit is larger than a threshold value and a case where the count value output from the counter circuit is smaller than the threshold value.

Photoelectric conversion apparatus using avalanche photodiodes with different sensitivity to light

A photoelectric conversion device includes a plurality of pixels each including an avalanche diode, a quench unit reducing the avalanche multiplication of the avalanche diode, a pulse conversion unit converting an output signal of the avalanche diode into pulses, and a signal generation unit generating an accumulation signal obtained by accumulating the number of pulses, a detection unit detecting whether or not the width of the pulse is not smaller than a predetermined width, and a voltage control unit controlling a reverse bias voltage applied to the avalanche diode within a range not lower than the breakdown voltage of the avalanche diode based on the result of the detection. The voltage control unit lowers the reverse bias voltage within a range not lower than the breakdown voltage when the accumulation value of pixels whose pulse width is not smaller than a predetermined width is not smaller than a predetermined value.

Photoelectric conversion device and method of driving photoelectric conversion device

A photoelectric conversion apparatus includes a waveform shaping circuit, a reference circuit, and a counter. The waveform shaping circuit is configured to generate a first pulse signal based on a signal output from an avalanche diode. The reference circuit is configured to generate a second pulse signal without depending on incident light. The counter is connected to the waveform shaping circuit and the reference circuit to count a number of occurrences of a pulse signal. The pulse signal is based on at least one of the first pulse signal and the second pulse signal, and is input to the counter.

Photoelectric conversion apparatus, photoelectric conversion system, moving body, and testing method of photoelectric conversion apparatus

A photoelectric conversion apparatus includes a first diode which is an avalanche multiplication-type and a second diode which is an avalanche multiplication-type formed within a semiconductor substrate, a first transistor forming a first quench element, and a second transistor forming a second quench element. The first transistor and the second transistor are disposed between the first diode and the second diode in a planar view. The first transistor and the second transistor are disposed in a common semiconductor well region formed within the semiconductor substrate.

Photoelectric conversion apparatus, photoelectric conversion system, and moving object

In an aspect of the present disclosure, a photoelectric conversion apparatus comprising includes a scan unit and a plurality of pixels each including a photoelectric conversion unit and configured to output a digital signal corresponding to an electric charge generated by the photoelectric conversion unit. The scan unit performs a scan to read the digital signal from the plurality of pixels and an operation of inputting a signal based on the digital signal output from the plurality of pixels to the plurality of pixels.

Photoelectric conversion apparatus, image capturing system, method for driving photoelectric conversion apparatus, and moving object

An embodiment includes a plurality of pixels each including a light receiving unit that outputs a pulse in response to incidence of a photon, and a signal generation unit that generates a signal in accordance with the number of pulses output from the light receiving unit, wherein the plurality of pixels includes a first pixel in which an upper limit value of a signal generated by the signal generation unit is a first value and a second pixel in which an upper limit value of a signal generated by the signal generation unit is a second value that is smaller than the first value.

Photoelectric conversion device having pixels comprising different size counters

A disclosed photoelectric conversion device includes a plurality of pixels each including a light receiving portion that outputs a pulse in response to incidence of a photon and a signal generation unit that outputs a signal based on output from the light receiving portion, and each of the plurality of pixels further includes a detection unit that detects whether or not a width of a pulse output from the light receiving portion exceeds a predetermined threshold value.

Photoelectric conversion device, method of driving photoelectric conversion device, imaging system, and movable object, generating a signal based on pulse width and pulse count

An electron beam detection element according to an exemplary embodiment includes a plurality of unit cells. Each of the plurality of unit cells includes a diode of avalanche multiplication type and a plurality of memories. The diode of avalanche multiplication type is configured to detect an electron beam. The plurality of memories store signals of different frames respectively, each of the signals being output from the diode.

Electron beam detection element, electron microscope, and transmission electron microscope

Growing community of inventors

Inagi, Japan

Yukihiro Kuroda