Matsushita Electric Works, Ltd.

Other

Riken Corporation

Panasonic Corporation

Panasonic Electric Works Co., Ltd.

Canon Tokki Corporation

Kido; Junji

Yukihiro Kondo

Yoshiaki Honda

Yoshifumi Watabe

Tsutomu Ichihara

Takuya Komoda

Nobuyoshi Koshida

Koichi Aizawa

Takashi Hatai

Hideki Hirayama

Junji Kido

Robert David Armitage

Hans Sauer

Kenji Tsubaki

Takayoshi Takano

Naomasa Oka

Junji Ikeda

Takashi Takada

Yasuhisa Kishigami

Yuuji Yanagi

Teruo Nakagawa

Eiichi Matsumoto

Yasuo Kishi

Yoshifumi c/o Matsushita Electric Works Ltd Watabe

Tsutomu c/o Matsushita Electric Works Ltd Ichihara

Yoshiaki 42-6 Koaza Sunano Honda

The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.

Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element

A semiconductor light emitting device includes an n-type nitride semiconductor layerformed on one surface side of a single-crystal substratefor epitaxial growth through a first buffer layer, an emission layerformed on a surface side of the n-type nitride semiconductor layer, and a p-type nitride semiconductor layerformed on a surface side of the emission layer. The emission layerhas an AlGaInN quantum well structure, and a second buffer layerhaving the same composition as a barrier layerof the emission layeris provided between the n-type nitride semiconductor layerand the emission layer. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.

Semiconductor light emitting device and illuminating device using it

An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source comprises an electrically conductive substrate of p-type silicon substrate ; n-type regions of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers formed on the n-type regions which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region ; poly-silicon layers between the strong field drift layers ; surface electrodes of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer and the poly-silicon layers . By selecting a pair of the n-type regions and the surface electrodes and thereby making electron emitted from the crossing points due to combination of the surface electrode to be electrically applied and the n-type region to be electrically applied, electrons can be discharged from desired regions of the surface electrodes

Field emission electron source, method of producing the same, and use of the same

A vacuum vapor deposition apparatus includes a vacuum chamber having a plurality of vapor sources and a heater for heating the vapor sources to achieve vacuum vapor deposition on a surface of at least one substrate within the vacuum chamber. At least one of the vapor sources utilizes an organic material. A hot wall, which encloses the vapor sources and a space in which the vapor sources and the substrate confront each other, is heated to a temperature at which the organic material is neither deposited nor decomposed. The organic material is vapor deposited on the surface of the substrate by heating the vapor sources while the vapor sources and the substrate are moved relative to each other.

Apparatus for and method of vacuum vapor deposition and organic electroluminescent device

A field emission-type electron source ( ) is provided with a conductive substrate ( ), a semiconductor layer formed on a surface of the conductive substrate ( ), at least a part of the semiconductor layer being made porous, and a conductive thin film ( ) formed on the semiconductor layer. Electrons injected into the conductive substrate ( ) are emitted from the conductive thin film ( ) through the semiconductor layer by applying a voltage between the conductive thin film ( ) and the conductive substrate ( ) in such a manner that the conductive thin film ( ) acts as a positive electrode against the conductive substrate ( ). The semiconductor layer includes a porous semiconductor layer ( ) in which columnar structures ( ) and porous structures ( ) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film ( ). Further, an average dimension of each of the porous structures ( ) in a thickness direction of the semiconductor layer is smaller than or equal to 2 &mgr;m.

Field emission-type electron source and manufacturing method thereof

A field emission type electron source,is provided with an n-type silicon substrate,a strong field drift layer,formed on the n-type silicon substrate,directly or inserting a polycrystalline silicon layer,therebetween, and an electrically conductive thin film,which is a thin gold film, formed on the strong field drift layer,Further, an ohmic electrode,is provided on the back surface of the n-type silicon substrate,Hereupon, electrons, which are injected from the n-type silicon substrate,into the strong field drift layer,drift in the strong field drift layer,toward the surface of the layer, and then pass through the electrically conductive thin film,to be emitted outward. The strong field drift layer,is formed by making the polycrystalline silicon,formed on the n-type silicon substrate,porous by means of an anodic oxidation, and further oxidizing it using dilute nitric acid or the like.

Field emission-type electron source and manufacturing method thereof and display using the electron source

A getter for use in a sealed contact chamber consists of a porous getter material which acts to adsorb substances which could create resistive films on electrical contacts. By disposing such a getter within the contact chamber of a switching device, such as an electromagnetic relay, molecules of, for instance, organic compounds, may be selectively and over long terms adsorbed to the getter and thus kept away from the contacts. The selective adsorption of such molecules is achieved by a porous getter material in which the majority of the pores have diameters greater than 3 nm and smaller than 100 nm, with the mean value of pore diameter ranging from about 7 nm to about 20 nm. The getter material may be substantially Al.sub.2 O.sub.3.

Getter and electrical switching system using such getter

Growing community of inventors

Hirakata, Japan

Yukihiro Kondo