Oki Semiconductor Co., Ltd.

Lapis Semiconductor Co., Ltd.

Oki Electric Industry Co., Ltd.

Yukihiro Kita

A signal conversion device includes a first converting section configured to convert a clock signal input through a first signal line, a data signal input through a second signal line, and a control signal input through a third signal line, into pulse signals including a first pulse train and a second pulse train; and a transmitting section configured to transmit the first pulse train through a fourth signal line and the second pulse train through a fifth signal line, wherein the control signal is a signal that, through a level transition, causes a control target device to switch between an active state and an inactive state, and wherein the first converting section is configured to put successive pulses into at least one of the first pulse train and the second pulse train in response to the level transition of the control signal.

Signal conversion device, processing device, communication system, and signal conversion method

A battery charger includes a battery cell, a reference voltage generating section, an A/D converting section including an A/D converter and a control section. The reference voltage generating section includes a first reference voltage circuit generating a first reference voltage and a second reference voltage circuit generating a second reference voltage equal to the first reference voltage. To diagnose the A/D converter, the first reference voltage circuit is used. To diagnose the first reference voltage circuit, a second A/D conversion value obtained by A/D converting a second divided voltage of the second reference voltage via the A/D converter using the first reference voltage is compared with a first reference value obtained by A/D converting a first divided voltage of the first reference voltage via the A/D converter using the first reference voltage when the first reference voltage circuit is normal.

Battery charger, voltage monitoring device and self-diagnosis method of reference voltage circuit

Disclosed is a battery charger including a battery cell, a reference voltage generating section, an A/D converting section including an A/D converter and a control section. The reference voltage generating section includes a first reference voltage circuit generating a first reference voltage and a second reference voltage circuit generating a second reference voltage equal to the first reference voltage. To diagnose the A/D converter, the first reference voltage circuit is used. To diagnose the first reference voltage circuit, a second A/D conversion value obtained by A/D converting a second divided voltage of the second reference voltage via the A/D converter using the first reference voltage is compared with a first reference value obtained by A/D converting a first divided voltage of the first reference voltage via the A/D converter using the first reference voltage when the first reference voltage circuit is normal.

A method of producing a semiconductor optical sensor element includes the steps of: forming an oxide film on a silicon carbide substrate; forming a gate electrode layer on the oxide film; patterning the gate electrode layer to form a gate electrode; and processing thermally the gate electrode layer or the gate electrode under an oxidation environment. Further, the gate electrode layer or the gate electrode is thermally processed under the oxidation environment at a temperature between 750&#xb0; C. and 900&#xb0; C.

Semiconductor optical sensor element and method of producing the same

The light sensor according to an exemplary embodiment of the present invention is a multi-function light sensor that is equipped at low cost with both an ultraviolet light sensor and a visible light sensor and suppresses leak current between adjacent elements on the same substrate. The light sensor is equipped with a SOI substrate, formed from a silicon oxide insulating film and a silicon semiconductor layer made up from single crystal silicon, on a silicon substrate. Photodiodes PD1 and PD2 are formed on the silicon substrate, and a photodiode UV-PD, and main portions (source, drain and channel regions) of a MOSFET configuring a control circuit, are formed in the silicon semiconductor layer on the insulating film.

Multi-function light sensor

The invention is applicable to a characteristic adjustment method for an inductor formed by laminating a plurality of coils and electrically connecting these coils by a through hole, and is aimed at providing a method which can easily adjust the characteristic of the inductor with a simple configuration. The method comprises determining a part of the coil in an outermost layer as an adjustment area, and not forming the through hole below the adjustment area, and removing at least a part of the adjustment area after the coil in the outermost layer is formed.

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Tokyo, Japan

Yukihiro Kita