Ngk Spark Plug Company, Limited

Ngk Spark Plug., Ltd.

Yukihiro Kimura

Rokuro Kanbe

Rokuro Kambe

Shunkichi Nozaki

Nobuhiko Miyawaki

Kouki Ogawa

Masao Kuroda

Yasuhiro Sugimoto

Kazuhiro Suzuki

Sumihito Tominaga

Manabu Sato

Jun Otsuka

Noriyasu Sugimoto

Yoshiro Noda

Haruhiko Murata

Sumio Ohta

Norio Kato

Mitsuru Tamaki

Masaharu Seto

Tetsuya Kasiwagi

Masashi Inaishi

Kazuho Tatemasu

A wiring substrate is configured such that a build-up layer is formed only on a front surface (a single side) of a core substrate and such that the distance between a semiconductor device mounted on the front surface thereof and an electronic component mounted on the back surface thereof or incorporated therein behind the back surface is reduced to thereby enhance electrical characteristics of an electrically continuous path therebetween, and whose overall strength is enhanced so as not to be prone to deflection or warpage. The wiring substrate includes a relatively thin first core substratehaving a front surfaceand a back surfacea relatively thick second core substratesuperposed on the back surfaceof the first core substrateand having a through openingformed therein, the first substrateand the through openingdefining a recessand a build-up layer BU formed on the front surfaceof the first core substrateand including wiring layersandand dielectric layersand

Wiring substrate

An intermediate substrate includes a substrate core formed by a main core body portion constructed of a sheet of polymer material and having a subsidiary core accommodation portion formed therein. A ceramic subsidiary core portion, which is constructed of a ceramic sheet, is accommodated in the subsidiary core accommodation portion and is of a thickness matching that of the main core body portion. A thin film capacitor is formed on a first main surface side of a plate-like base of the core portion and includes first and second thin film electrodes separated from each other by a thin film dielectric layer so as to provide direct current isolation between the electrodes. First and second direct current isolated terminals of a first terminal array are electrically connected to the first and second thin film electrodes.

Intermediate substrate

An intermediate substrate is provided which reduces the effect of the difference in the coefficients of linear expansion between the terminals of the substrate and those of a semiconductor integrated circuit device, and which thus lowers the likelihood of disconnection due to thermal stress. The intermediate substrate, which is a planar member made of a polymeric material, includes a substrate core including a main core body having formed therein a sub-core compartment, and a ceramic sub-core section accommodated in the compartment. A first terminal array on the first principal surface side includes two types of terminals, functioning either as power source terminals or ground terminals, and a signal terminal. The array occupies an area entirely included within an orthogonally projected region of the sub-core section projected onto a reference plane parallel to the planar surface of the substrate core.

A capacitor includes a capacitor main body having a front surface on which a semiconductor device is to be mounted and a rear surface at which the capacitor main body is to be mounted on a first main surface of a circuit substrate, a plurality of internal electrodes disposed within the capacitor main body, and a plurality of via conductors penetrating the capacitor main body between the front surface and the rear surface and electrically connected to the internal electrodes, wherein the capacitor main body has a first dielectric layer located on a side of the capacitor main body closer to the front surface and a second dielectric layer located on a side of the first dielectric layer closer to the rear surface, the second dielectric layer having a higher thermal expansion coefficient and a higher dielectric constant than the first dielectric layer.

Capacitor, capacitor equipped semiconductor device assembly, capacitor equipped circuit substrate assembly and electronic unit including semiconductor device, capacitor and circuit substrate

A circuit board having a plurality of solder bumps is provided. The solder bumps are flattened and leveled at the tops so that the coplanarity of the solder bumps is 0.5 &mgr;m or less per 1 mm. The flattened and leveled tops of the solder bumps are formed by cold pressing, hot pressing or grinding. Method of forming such solder bumps and jigs used for carrying out such methods are also provided.

Circuit board having solder bumps

A printed wiring board includes a core substrate including a laminated capacitor. The laminated capacitor includes a plurality of composite dielectric layers and a plurality of metal layers stacked alternately. Three types through-hole conductors are provided which extend between the upper and lower surfaces of the core substrate. The first through-hole conductors are directly connected to first metal layers serving one electrode of the laminated capacitor, the second through-hole conductors are directly connected to second metal layers serving the other electrode of the laminated capacitor, and the third through-hole conductors are not connected to any of the first and second metal layers. The first and second through-hole conductors are used for establishing electrical connections between power supply and ground lines and an IC chip mounted on the printed wiring board. The third through-hole conductor is used as a signal line. Since the laminated capacitor is connected between the first and second through-hole conductors, noise entry is effectively prevented.

Printing wiring board, core substrate, and method for fabricating the core substrate

A printed wiring board includes a core substrate, one or more insulating resin layers laminated on at least one side of the core substrate, and a wiring layer formed at least between the core substrate and the insulating resin layer or between the insulating resin layers. The core substrate includes a composite dielectric layer that contains resin and a high-permittivity powder, and a plurality of metal layers disposed such that the composite dielectric layer is sandwiched therebetween. The composite dielectric layer and the metal layers constitute a laminated capacitor.

Printed wiring board, core substrate, and method for fabricating the core substrate

In a substrate having built-in capacitor which is incorporated in and united with an insulator, the capacitor has a dielectric layer made of a silicon nitride-based ceramic containing silicon carbide in an amount of from 13 to 30% by weight.

Substrate having a built-in capacitor and process for producing the same

The present integrated circuit package provides both a high density of conductor poles, and reduced crosstalk noises between the conductor poles. The conductor poles are received within holes in an insulating substrate. The insulating substrate has a laminated, multi-layer ceramic substrate structure comprising insulating plates having metallized layers thereon which constitute a portion of the walls of the holes. In addition, insulating layers for insulating the metallized layers from the conductor poles are formed within a selected number of the holes.

Integrated circuit package

The present integrated circuit package provides both a high density of conductor poles, and reduced crosstalk noise between the conductor poles. The conductor poles are arranged within a selected number of holes in an insulating substrate. Metallized layers for shielding the conductor poles are provided on the walls of the holes in the insulating substrate which receive the conductor poles. In addition, an insulating layer is provided on the inner circumferences of the metallized layers, which insulating layers directly surround the conductor poles to preclude direct contact between the conductor poles and the metallized layers.

Integrated circuit package and process for producing same

A method of producing a sintered body by molding a mixture of a ceramic base powder, a sintering assistant powder and an organic binder and sintering the molded body in a non-oxidizing atmosphere is disclosed in which the ceramic base powder has such a particle size distribution that the amount of powder particles not greater than 1.0 .mu.m in size is not more than 15% by weight and the average particle diameter is not greater than 5 .mu.m. According to the method, therefore, sufficient passage of gas is secured in a degreasing step, resulting in an enhanced degreasing efficiency and exellent sintering properties. Where the sintering assistant powder has such a particle size distribution that the amount of powder particles not greater than 10 .mu.m in size is not more than 5% by weight, the amount of coarse powder is extremely small and, therefore, large voids are not formed. It is thus possible to produce easily a high-quality sintered body by controlling the respective particle size distributions of the powders.

Method of producing sintered ceramic body

A multilayer ceramic wiring board including a ceramic board having a plurality of through-holes and formed by laminating three or more green sheets of a ceramic material and burning a laminate of the green sheets, and a plurality of conductors provided in the through-holes. Each of the conductors is formed of a ceramic material and a conductive material in combination. The ceramic board is composed of a pair of upper and lower layer portions each having at least an outermost surface layer and an inner layer portion disposed between the upper and lower portions. The conductors are composed of an outer conductor portion formed in the upper and lower layer portions and an inner conductor portion formed in the inner layer portion. The outer conductor portion has a content ratio of the ceramic material higher than that of the inner conductor portion. Accordingly, the generation of cracks in the outer conductor portion disposed at the upper and lower layer portions of the ceramic board can be prevented, and an electric resistance can be reduced.

Multilayer ceramic wiring board

The invention relates to a ceramic heater element consisting of a sintered body of a silicon nitride base ceramic and a resistance heating wire such as a tungsten wire embedded in the ceramic body. The ceramic contains Al.sub.2 O.sub.3 and AlN besides Si.sub.3 N.sub.4 and is produced by using Y.sub.2 O.sub.3 as sintering aid. The ceramic body is improved in strength and also in stability of the ceramic structure at temperatures up to about 1300.degree. C. by rendering the grain boundary phase of the sintered ceramic a crystalline phase comprising either 2Y.sub.2 O.sub.3.Si.sub.2-x Al.sub.x N.sub.2-x O.sub.1-x (0.ltoreq.x&lt;2) or 3Y.sub.2 O.sub.3.5Al.sub.2 O.sub.3. The heater element is produced by preparing a powder mixture in which (Si.sub.3 N.sub.4 +Al.sub.2 O.sub.3 +AlN) amounts to 90-98 wt %, the balance being the sintering aid, with proviso that (Al.sub.2 O.sub.3 +AlN)/Si.sub.3 N.sub.4 is from 0.02 to 0.08 by weight and that (Al.sub.2 O.sub.3 /AlN) is from 0.2 to 2.0 by weight, compacting the powder mixture into a desirably shaped body with insertion of the heating wire and sintering the shaped body preferably by a hot press sintering method. For example, the heater element is used in a glow plug for a diesel engine.

Silicon nitride base ceramic heater element and method of producing same

A ceramic glow plug comprises a ceramic heater formed by embedding a metal wire in a sintered Si.sub.3 N.sub.4 -based ceramic. The ceramic heater is brazed to the inner surface of an axial bore of a metal tube and the metal tube is brazed to the inner surface of an axial bore of a metal holder. The tip of the ceramic heater extends from the metal tube and metal holder and is coated with highly heat and corrosion resistant material to minimize erosion and corrosion due to combustion gases. The coating consists essentially of a thin CVD film of alumina (Al.sub.2 O.sub.3) having a thickness of 2 .mu.m deposited on a precoating AlON layer having a thickness of 0.5 .mu.m formed on the exposed surface of the tip. Alternatively, the protective coating may consist of thin CVD film of silicon carbide (SiC) or silicon nitride (Si.sub.3 N.sub.4) formed directly on the exposed surface of the tip.

Silicon nitride glow plug with alumina corrosion and erosion protective

A ceramic heater comprising a ceramic substrate is described which has formed thereon a layer of a silicide of an element selected from groups IVa, Va and VIa of the periodic table. The heater has stable temperature vs. resistance characteristics, has high mechanical strength and produces the desired temperature in a very short period of time.

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Nagoya, Japan

Yukihiro Kimura