Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Yukihiro Inoue

Mamoru Seike

Toshiharu Tsubouchi

Mitsuhiro Suzuki

Minoru Morinaga

A cassette library apparatus and a posture control method thereof are provided. A swing arm () is capable of chucking or releasing a cassette () by getting into a recessed part () of the cassette () and getting out of the recessed part () when a swing frame () swings up and down. The apparatus includes a swing mechanism () for swinging the swing frame () and the swing arm (), a stepping motor () for driving the swing mechanism (), a device () which detects the swing arm () being in a specific posture, and a device () which detects the posture of the swing arm () by counting a number of pulses supplied to the stepping motor () when the posture of the swing arm () is changed from the specific posture by drive of the stepping motor ().

Cassette library device and method of controlling the attitude thereof

A driving circuit and a data-line driver is provided which are capable of improving the tolerance to noise between adjacent terminals by using a conventional CMOS process while keeping the chip size small, because a high-density N-diffusion layer () is provided in an isolation region () to minimize a collector current of a parasitic NPN transistor ().

Driving circuit

A drain diffusion layerincludes a low impurity concentration regionand a high impurity concentration region, and the low impurity concentration regionis located on the channel region side. An impurity layerhaving an opposite conductivity type to the drain diffusion layeris formed in the channel region, at a position away from the low impurity concentration regionby a distance T. Alternatively, the low impurity concentration regionand the impurity layerare located so as to contact each other. Still alternatively, a border impurity layer is provided between the low impurity concentration regionand the impurity layer. Thus, a semiconductor device including a high voltage transistor capable of suppressing the reduction of the electric current driving capability and performing stable driving, and a method for fabricating the same, can be provided.

Semiconductor device including a high voltage transistor

A cassette library apparatus includes a swing arm () provided at a swing frame () provided at a picker () to be swingable up and down, and swingable integrally with the swing frame (), an engaging part () provided at a tip end of the swing arm () and linked to an upward swing motion of the swing arm () to be able to get into a recessed part () of the cassette () from below, and a nut-shaped body () which is mounted to the swing frame () and screwed onto a feed screw () provided at the picker in an up-and-down direction, and swings the swing frame () by the operation of the feed screw ().

Cassette library device

A semiconductor device has: a gate insulator film of a transistor formed in a predetermined region on a region of a first conductivity type; a gate electrode of the transistor formed on the gate insulator film; a diffusion layer of a second conductivity type formed on both sides of the gate insulator film on the region of the first conductivity type; and a diffusion layer of the first conductivity type formed on the region of the first conductivity type so as to surround the gate insulator film and the diffusion layer of the second conductivity type. The diffusion layer of the first conductivity type has a higher impurity concentration than the region of the first conductivity type. In such a semiconductor device, the diffusion layer of the first conductivity type is formed so as to be separated from the gate insulator film. Consequently, it is the region of the first conductivity type having a lower concentration than the diffusion layer of the first conductivity type that forms a PN junction with the inversion layer in the channel region formed when the transistor is on (the inversion layer of the second conductivity type below the gate insulator film), so that the energy barrier of the PN junction is higher than that of the conventional PN junction of the diffusion layer of the first conductivity type and the inversion layer of the second conductivity type. As a result, leakage current generation is suppressed.

Semiconductor device

The present invention provides a magnetic tape cartridge driver for opening a tape protecting door of a tape cartridge, enabling contact between a magnetic head of the magnetic tape cartridge driver and a magnetic tape housed within the tape cartridge, which can accept not only a conventional tape cartridge but also an enlarged tape cartridge containing a larger capacity, by providing a slider mounted in the cartridge tape driver for engaging with a guide groove formed on a side of an inserted tape cartridge, thereby sliding the tape cartridge along the guide rails to the specified position, where the slider tip comes into contact with an edge of the tape protecting door before the engagement of the guide rails with the guide grooves.

Growing community of inventors

Toon, Japan

Yukihiro Inoue