Ablic Inc.

Sii Semiconductor Corporation

Yukihiro Imura

Masaru Akino

Shinjiro Kato

Yoshitaka Kimura

Takeshi Morita

Hisashi Hasegawa

Kaku Igarashi

A semiconductor device () includes: a substrate (); a wiring () formed above the substrate (); a titanium nitride film () formed on the wiring (); an oxide film () formed on the titanium nitride film (); a silicon nitride film () formed on the oxide film (); and a pad portion () exposing the wiring (), and formed at a place where a first opening portion () formed in the silicon nitride film () and a second opening portion () formed in the titanium nitride film () overlap with each other in plan view, and being inside a third opening portion () formed in the oxide film () in plan view, wherein the silicon nitride film () is formed on top of and in contact with the titanium nitride film () inside the third opening portion () in plan view.

Semiconductor device and method of manufacturing a semiconductor device

Provided is a semiconductor device that is resistant to the corrosion of titanium nitride forming an anti-reflection film. The semiconductor device includes: a wiring layer which includes a wiring film made of aluminum or an aluminum alloy and formed on a substrate and a titanium nitride film formed on the wiring film; a protection layer which covers a top surface and a side surface of the wiring layer; and a pad portion which penetrates the protection layer and the titanium nitride film, and which exposes the wiring film, the protection layer including a first silicon nitride film, an oxide film, and a second silicon nitride film which are layered in the stated order from the side of the wiring layer.

A semiconductor device includes: a substrate; a wiring formed above the substrate; a titanium nitride film formed on the wiring; an oxide film formed on the titanium nitride film; a silicon nitride film formed on the oxide film; and a pad portion exposing the wiring, and formed at a place where a first opening portion formed in the silicon nitride film and a second opening portion formed in the titanium nitride film overlap with each other in plan view, and being inside a third opening portion formed in the oxide film in plan view, wherein the silicon nitride film is formed on top of and in contact with the titanium nitride film inside the third opening portion in plan view.

A corrosion-resistant semiconductor device includes fuse elements that can be cut by laser light. An upper portion of the fuse elements is covered with a porous insulating film so that, when laser light irradiated from a rear surface of a semiconductor substrate is collected at selected fuse elements, the fuse elements generate heat, expand, and rupture. An array of intersecting metal lines forming windows is disposed over the fuse elements to permit rapid expansion of the fuse elements when irradiated with the laser light. A silicon nitride film having a uniform thickness is formed on a front surface of the semiconductor device to prevent entry of moisture.

Semiconductor device having fuse element

A corrosion resistant semiconductor device includes fuse elements that can be cut by laser light. An upper portion of the fuse elements is covered with a porous insulating film so that, when laser light irradiated from a rear surface of a semiconductor substrate is collected at selected fuse elements, the fuse elements generate heat, expand, and rupture. A metal lattice having a plurality of windows is disposed over the fuse elements to permit rapid expansion of the fuse elements when irradiated with the laser light. Alternatively, a metal array having a plurality of independent light-shielding portions may be disposed over the fuse elements to prevent the laser light from adversely affecting circuitry on the front surface side of the semiconductor device.

Growing community of inventors

Chiba, Japan

Yukihiro Imura