Canon Kabushiki Kaisha

Ricoh Company, Ltd.

Yukihiro Hayakawa

Kei Fujita

Yasushi Kawasumi

Kenji Makino

Keiichi Sasaki

Yuzo Kataoka

Masato Kamiichi

Mineo Shimotsusa

Genzo Momma

Ershad Ali Chowdhury

Yasuhiro Sekine

Naoyuki Urata

Yuu Yamashita

Teruyoshi Yamamoto

Genzo Monma

Ken Mitsui

Kanna Iinuma

Kenichi Fujioka

Yoshinori Kawasaki

Yoshiyuki Imanaka

Ichiro Saito

Junichi Kobayashi

Hiroyuki Suzuki

Takayuki Yagi

Masahiro Fukuda

Masahiro Takizawa

Takaaki Yamaguchi

Takuya Hatsui

Souta Takeuchi

Muga Mochizuki

Toshiyasu Sakai

Kousuke Kubo

Yasushi Matsuno

Shigeyuki Matsumoto

Hiraku Kozuka

Kazuaki Ohmi

Sakai Yokoyama

Seiichi Tamura

Makoto Terui

Hiroshi Ikakura

Fumio Murooka

Tetsuo Asaba

Hidenori Watanabe

Takumi Ogino

Yutaka Akino

Takashi Morii

Tomoyuki Tezuka

Yasuhiro Naruse

Kentarou Suzuki

Seiji Kamei

Hiroyuki Abiru

Akira Teruya

Yusuke Kawatsu

Megumi Okumura

A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.

Solid-state imaging apparatus, method of manufacturing the same, and camera

One or more methods of manufacturing a solid-state image pickup apparatus and one or more methods of manufacturing a light reflection member are provided herein, and one or more embodiments thereof may include forming a first insulating film and forming a photoresist pattern on the first insulating film. Furthermore, one or more embodiments of such methods may include forming an opening portion by removing the first insulating film while having the photoresist pattern serve as a mask and forming a light reflection member on a sidewall of the opening portion formed in the first insulating film.

Method of manufacturing solid-state image pickup apparatus

A information processing unit includes: a control unit configured to control operation processing of individual units through a user interface; a print set value storage unit configured to store a print set value that is set by operation of an operation unit on a basic setting screen displayed on a display unit on which setting relating to the color printing is performed at a basic level and a print detail set value that is set by operation of the operation unit on a detail setting screen as another dialog on which the setting is performed at a detail level under operation control of the control unit; and a print data creating unit configured to create print data of the color printing based on the print set value and the print detail set value under operation control of the control unit.

Information processing unit, printing control method for printer driver, and computer program product

A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.

Solid-state image sensor with light-guiding portion

In a printer driver, combinations of standard print conditions and standard render data are saved as standard patterns, and combinations of standard print conditions and standard render data used for exceptional settings are saved as print application patterns. The print application patterns and the standard patterns are associated with each other. When printing document data, print condition data and render data are spooled by each page, the standard print conditions and the standard render data are compared, and a most similar standard pattern is detected. The print application pattern corresponding to the detected standard pattern is referred to, and print conditions are generated by combining standard print conditions and print conditions of the document data for each page. From the render data of the document data or from the standard render data, print data that can be processed by the printer is generated.

Printer driver

A through-hole forming method includes steps of forming a first impurity region () around a region where a through-hole is to be formed in the first surface of a silicon substrate (), the first impurity region () being higher in impurity concentration than the silicon substrate (), forming a second impurity region () at a position adjacent to the first impurity region () in the depth direction of the silicon substrate (), the second impurity region () being higher in impurity concentration than the first impurity region (), forming an etch stop layer () on the first surface, forming an etch mask layer () having an opening on the second surface of the silicon substrate () opposite to the first surface, and etching the silicon substrate () until at least the etch stop layer () is exposed via the opening.

Through-hole forming method and inkjet head

Through-hole forming method, inkjet head, and silicon substrate

A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.

Circuit board and liquid discharging apparatus

A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

Structure with through hole, production method thereof, and liquid discharge head

In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.

Method for producing circuit substrate

The invention provides a heat generating resistant element having a high durability and a high resistance suitable for constituting an electrothermal converting member in an ink jet head or an ink jet apparatus. There is employed, as the heat generating resistant element, a film constituted of Cr, Si and N, having a composition of Cr: 15 to 20 at. %, Si: 40 to 60 at. % and N: 20 to 45 at. %, which constitute 100 at. % or substantially 100 at. %.

Heat generating resistant element film, substrate for ink jet head utilizing the same, ink jet head and ink jet apparatus

A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

Semiconductor device, method for manufacturing the same, and liquid jet apparatus

To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 &#x3a9;/&#x25a1; to 400 &#x3a9;/&#x25a1;, and has a thickness of 30 nm to 80 nm.

Heating resistor film, recording head substrate, recording head, and recording apparatus

In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.

Substrate for ink jet recording head, ink jet recording head and ink jet recording apparatus using ink jet recording head

Growing community of inventors

Kanagawa, Japan

Yukihiro Hayakawa