Toyota Jidosha Kabushiki Kaisha

Denso Corpora Tion

Yukihiko Watanbe

Eiichi Okuno

Takeo Yamamoto

Hirokazu Fujiwara

Masaki Konishi

Takashi Katsuno

A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide.

Growing community of inventors

Nagoya, Japan

Yukihiko Watanbe