Tdk Corporation

The Westaim Corporation

Yukihiko Shirakawa

Katsuto Nagano

Shintaro Kon

Yoshihiko Yano

Masashi Miwa

Kazuhiro Nakamura

Hiromitsu Nogiwa

Shirou Ootsuki

Hisashi Tanaka

Isao Fujiwara

Tomoyuki Oike

Tsukasa Sato

Osamu Hirose

Tatsuo Inagaki

Masahiko Konno

Masato Susukida

Taku Takeishi

Jun Hagiwara

Yoshio Saita

Iwao Miura

Takaji Shimosaka

Minoru Ookoba

Masatoshi Takizawa

An electronic component comprises an element body, an external electrode, and an insulating resin coating layer. The element body has a pair of end faces opposed to each other, a pair of principal faces extending so as to connect the pair of end faces and opposed to each other, and a pair of side faces extending so as to connect the pair of principal faces and opposed to each other. The external electrode is formed so as to cover at least a partial region of the principal face and/or a partial region of the side face and has a plating layer comprised of Sn or an Sn alloy. The insulating resin coating layer covers at least the portion of the external electrode formed so as to cover the side face.

Electronic component

An electronic component comprises an element body and an outer electrode. The element body has a pair of end faces opposing each other, a pair of main faces opposing each other while extending so as to connect the pair of end faces to each other, and a pair of side faces opposing each other while extending so as to connect the pair of main faces to each other. The outer electrode is formed on the end face side of the element body and covers a portion of the main and side faces adjacent to the end face. At least a surface of an electrode portion of the outer electrode located on the side face side thereof is covered with an insulating layer.

Electronic component and method of manufacturing electronic component

A surface mount type electronic component has a dielectric element body, electrodes, lead conductors, and lead wires. The dielectric element body has principal faces and side faces. One electrode is formed on one principal face, the other electrode is formed on the other principal face, and the electrodes face each other. A first portion of one lead conductor is laid on one side face. A first portion of the other lead conductor is laid on another side face. First portions of the lead wires are connected to the corresponding first portions of the lead conductors.

Electronic component, mounted structure, and inverter device therewith

A high-voltage capacitor is intended for use in a high-voltage capacitor device having at least two through conductors. The high-voltage capacitor includes a dielectric porcelain, an individual electrode, and a common electrode. At least two spaced individual electrodes are provided on one surface of the dielectric porcelain and intended to be connected one-to-one to the through conductors positioned outside the dielectric porcelain. The common electrode is provided on the other surface of the dielectric porcelain.

High-voltage capacitor, high-voltage capacitor device and magnetron

A high-voltage feed-through capacitor includes: a capacitor element; a grounding metal fitting; an insulating resin; two through conductors; an insulating cover; and an insulating tube. The capacitor element has two separate electrodes on one side and one common electrode on the other side and is mounted on one side of the grounding metal fitting with the common electrode being connected to the same side of the grounding metal fitting. The insulating resin fills a space inside the capacitor element. Each through conductor has a rod-like conductor portion passing through the grounding metal fitting and the capacitor element and connected to the separate electrode. At least a portion of the insulating tube is attached to the rod-like conductor portion within the capacitor element. The insulating cover is attached to the rod-like conductor portion to have one end thereof in contact with one end of the insulating tube.

High-voltage feed-through capacitor and magnetron

The object of the present invention is to provide a flat-panel-display substrate which is high in heat resistance, of which the coefficient of thermal expansion is approximated to that of a thick film dielectric layer, which is low at high temperatures in reactivity with the lead-doped thick film dielectric layer, and which can be made to have a large area. The substrate of the present invention is obtained by sintering a body comprising glass powder and a filler made of metal and/or semi-metal oxide, and is constituted by the sintered body and whose average coefficient of linear thermal expansion is from 7 to 9.5 ppm/&#xb0; C. in the temperature range of 25 to 700&#xb0; C. The glass powder includes alkaline-earth oxide, 15 to 50% by weight of silicon oxide, and no greater than 2% by weight of boron oxide. Furthermore, the filler is at a concentration of 10 to 30% by volume of the total amount of the glass powder and the filler in the mould.

Substrate for flat panel display and thin film electroluminecence element

A composite substrate includes a substrate, an electrode formed on the substrate, a first dielectric layer of thick film dielectric formed on the electrode, a second dielectric layer formed on the first dielectric layer by a solution coating-and-firing technique, and a buffer layer formed below and/or within the first dielectric layer. The composite substrate keeps the thick-film dielectric layer fully insulating and enables functional thin films formed thereon such as a light emitting layer to perform stable operation, especially stable light emission. An EL panel using the same and a method for preparing the same are also provided.

Composite substrate, EL panel using the same, and making method

A thin-film EL device includes a lower electrode layer, a barrier layer containing a conductive inorganic compound, a lower insulating layer, a light emitting layer, and an upper electrode layer stacked in order on an electrically insulating substrate. An EL device of high display quality is established at a low cost by acquiring satisfactory light emitting properties without using an expensive high-melting point noble metal in the lower electrode layer and without increasing the thickness of the lower electrode layer, even when the lower insulating layer contains a lead base dielectric material.

Thin-film EL device and composite substrate

The invention has for its object to provide, without incurring any cost increase, a thin-film EL device in which a dielectric layer is corrected for non-flat portions to have a smooth surface, thereby ensuring enhanced display quality, and its fabrication process. This object is achieved by the provision of a thin-film EL device having at least a structure comprising an electrically insulating substrate ( ), a lower electrode layer ( ) stacked on the substrate according to a given pattern, a multilayer dielectric layer ( ) formed thereon by repeating a solution coating-and-firing step plural times, and a light-emitting layer ( ), a thin-film insulator layer ( ) and a transparent electrode layer ( ) stacked on the dielectric layer. The multilayer dielectric layer has a thickness of at least four times as large as a thickness of the electrode layer and 4 &mgr;m to 16 &mgr;m inclusive. The fabrication process is also provided.

Thin-film EL device, and its fabrication process

The invention aims to solve the problem of prior art EL devices that undesirable defects form in dielectric layers, and especially the problems of EL devices having dielectric layers of lead-base dielectric material including a lowering, variation and change with time of the luminance of light emission, and thereby provide an EL device ensuring high display quality without increasing the cost. Such objects are achieved by an EL device comprising at least an electrically insulating substrate and a structure including an electrode layer , a dielectric layer , a light emitting layer and a transparent electrode layer stacked on the substrate , wherein the dielectric layer is a laminate including a first thick-film ceramic high-permittivity dielectric layer whose composition contains at least lead, a second high-permittivity layer whose composition contains at least lead, and a third high-permittivity layer whose composition is free of at least lead.

EL device

The invention has for its object to provide an EL phosphor multilayer thin film and EL device which can emit light with improved luminance. This object is achieved by the provision of an EL phosphor multilayer thin film wherein a phosphor thin film and a dielectric thin film are stacked one upon another. The phosphor thin film comprises a matrix material containing as a main component at least one compound selected from an alkaline earth thioaluminate, an alkaline earth thiogallate and an alkaline earth thioindate, and an rare earth element as a luminescent center, and the dielectric thin film comprises an alkaline earth oxide. There is also provided an EL device comprising such an EL phosphor multilayer thin film.

EL phosphor multilayer thin film and EL device

An object of the invention is to provide an EL phosphor laminate thin film and EL device which can emit light at a high luminance. The object is achieved by stacking a phosphor thin film and a dielectric thin film one on the other wherein the phosphor thin film comprises at least one compound selected from an alkaline earth thioaluminate, an alkaline earth thiogallate and an alkaline earth thioindate as a main component, and a rare earth element as a luminescence center, and the dielectric thin film comprises an alkaline earth-containing oxide and/or a titanium-containing oxide.

Growing community of inventors

Tokyo, Japan

Yukihiko Shirakawa