Matsushita Electric Industrial Co., Ltd.

Sysmex Corporation

Yukiharu Uraoka

Toshio Yamada

Shin Hashimoto

Isao Miyanaga

Atsushi Fujiwara

Yasushi Okuda

Yoshirou Nakata

Kenzou Hatada

Toshinori Maeda

Koji Eriguchi

Zheng Bin

A retainer board, holding a semiconductor wafer having a plurality of integrated circuit terminals for testing a semiconductor chip, is provided in confronting relation to a probe sheet having a plurality of probe terminals electrically connected to their corresponding integrated circuit terminals. An insulating substrate, having wiring electrically connected to the plural probe terminals, is provided on the probe sheet in opposed relation to the retainer board. An elastic member is interposed between the probe sheet and the insulating substrate. The retainer board and the probe sheet are brought into so closer relationship that each integrated circuit terminal of the semiconductor wafer held by the retainer board is electrically connected to its corresponding probe terminal of the probe sheet.

Semiconductor wafer package, method and apparatus for connecting testing IC terminals of semiconductor wafer and probe terminals, testing method of a semiconductor integrated circuit, probe card and its manufacturing method

Semiconductor wafer package, method and apparatus for connecting testing

A plurality of different constant currents are implanted into an element of a semiconductor device such as a gate oxide film and a metal wire, a charge-to-breakdown (or a breakdown time) is measured from a result of current implantation, a relationship between a constant current value and the charge-to-breakdown (or a breakdown time) is determined, and a time-sequence change in the current during application of a constant voltage is presumed. Next, of a time-sequence change characteristic of the current during application of the constant voltage, current values during the respective minute periods are approximated to a constant current value. Consumption ratios of the life time due to the respective current values are calculated based on a relationship between the constant current value and the charge-to-breakdown (or a breakdown time). the consumption ratios of the life time are accumulated, and the sum of the respective minute periods which is obtained when the accumulation value becomes 1 is presumed to be the life time. Since the life time during application of the constant voltage is presumed utilizing a result of a constant current test which takes only a short time, it is possible to quantitatively, quickly and accurately presume the reliability life time of a gate oxide film and a metal wire and a TFT, etc.

Method of presuming life time of semiconductor device

A luminescence amount detecting part detects a weak optical radiation which a transistor in a semiconductor integrated circuit emits owing to a hot carrier effect. An output thereof is image-processed by an image processing part. An information storage part stores information on a transistor width and information on a switching frequency at an execution of a test pattern into each transistor. A switching time calculating part evaluates a switching time of the transistor from respective outputs of the image processing part and the information storage part to output a result. Thus the switching time can be evaluated easily without a electron beam tester whose operation is complicated. A delay time can be evaluated by detecting a luminescence amount which changes depending on a gate voltage, instead of measuring a gate voltage.

Device for and method of evaluating semiconductor integrated circuit

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Nara, Japan

Yukiharu Uraoka