Kabushiki Kaisha Toshiba

Yukiharu Miwa

Kazuaki Suzuki

Yu Ohata

Hirohito Tanabe

Yoshihito Nakayama

In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree. C.

Power MOS FET with carrier lifetime killer

In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.

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Yokohama, Japan

Yukiharu Miwa