Screen Holdings Co., Ltd.

Merck Patent Gmbh

Yukifumi Yoshida

Song Zhang

Manabu Okutani

Shuichi Yasuda

Nobuyuki Shibayama

Yasunori Kanematsu

Tomonori Fujiwara

Tatsuro Nagahara

Dai Ueda

Takafumi Kinuta

Katsuya Akiyama

Tetsuya Shibata

Akiyoshi Nakano

Hiroshi Abe

Ayumi Higuchi

Naoko Yamaguchi

Masayuki Otsuji

Hiroaki Takahashi

Hitoshi Nakai

Yu Yamaguchi

Chikara Maeda

A substrate processing method includes a polymer-containing liquid supplying step of supplying, to a major surface of a substrate, a polymer-containing liquid that contains an acidic polymer and a solvent dissolving the acidic polymer, a polymer film forming step of rotating the substrate with the polymer-containing liquid adhered to the major surface to spreadingly coat the polymer-containing liquid and form a polymer film, containing the acidic polymer, on the major surface of the substrate, and a rinsing step of supplying, to the major surface of the substrate, a rinse liquid that cleans the major surface of the substrate in a state in which the polymer film is formed on the major surface.

Substrate processing with polymer-containing liquid

A substrate processing method that includes a processing liquid supplying step which supplies a processing liquid to a surface of a substrate, a processing film forming step in which the processing liquid on the surface of the substrate is solidified or cured to form a processing film that holds removal objects present on the surface of the substrate, and a removing step in which a removing liquid is supplied to the surface of the substrate to thereby remove the processing film from the surface of the substrate in a state that the removal objects are held by the processing film. The processing liquid contains a dissolution component which dissolves at least one of a front layer of the substrate and the removal objects as a dissolution object. The processing liquid supplying step includes a dissolution step which partially dissolves the dissolution object by the dissolution component in the processing liquid supplied to the surface of the substrate.

Substrate processing method and substrate processing device

A processing solution containing solvent and solute is supplied onto a substrate (). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate () by supplying a removal liquid onto the substrate (). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.

Substrate cleaning apparatus and substrate cleaning method

A substrate processing method includes a preprocessing forming step of forming a preprocessing film on a surface of a substrate having the surface on which a first region and a second region in which different substances are exposed are present, a preprocessing film separating step of separating the preprocessing film from the surface of the substrate with a stripping liquid, a processing film forming step of forming a processing film on the surface of the substrate after the preprocessing film separating step, and a processing film separating step of separating the processing film from the surface of the substrate with the stripping liquid. A removal capacity for the processing film to remove the first removal target present in the second region is higher than a removal capacity for the preprocessing film to remove the first removal target present in the second region, and a removal capacity for the preprocessing film to remove the first removal target present in the first region is higher than a removal capacity for the processing film to remove the first removal target present in the first region.

Substrate processing method, substrate processing apparatus, and recipe selection method

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Substrate processing method

The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes a substrate holder, and a discharge head for peripheral area from which a fluid is discharge toward a surface peripheral area of the substrate held on the substrate holder. The discharge head for peripheral area includes multiple nozzles, and a support part that supports the nozzles integrally. The nozzles include a processing liquid nozzle from which a processing liquid is discharged toward the surface peripheral area, and a gas nozzle from which gas is discharged toward the surface peripheral area. The gas nozzle is placed upstream of a rotative direction of the substrate relative to the processing liquid nozzle.

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a first cleaning solution supply part for supplying a main surface of a substrate with an alkaline or acid first cleaning solution and a second cleaning solution supply part for supplying the main surface with a second cleaning solution containing a thickener and having a viscosity higher than that of the first cleaning solution. In a state where one cleaning solution out of the first cleaning solution and the second cleaning solution is present on the main surface, the other cleaning solution is supplied onto the main surface. It is thereby possible to more reliably remove unnecessary substances on the main surface of the substrate.

Substrate processing device and substrate processing method

A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

A substrate processing apparatus includes: a spin base rotatable in a horizontal plane about a centered rotary axis; a holder to hold a substrate above the spin base; a lower surface processing unit to discharge a processing liquid toward a lower surface of the substrate held by the holder. The holder includes: a plurality of first abutting members that abut the substrate from a position obliquely below said substrate and that hold the substrate in a horizontal posture in a position spaced from an upper surface of said spin base; a plurality of second abutting members that abut the substrate from a position lateral to said substrate and that hold said substrate in a horizontal posture in a position spaced from the upper surface of said spin base. A switching mechanism switches between a first holding condition state where the first abutting members hold the substrate and a second holding condition state where the second abutting members hold the substrate; wherein, in the second holding condition state, the first abutting members are spaced from the substrate, and in the first holding condition state, an upper surface of the substrate is in a position above an upper end surface of each of the first and second abutting members are spaced from the substrate.

A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

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Kyoto, Japan

Yukifumi Yoshida