Toshiba Memory Corporation

Kabushiki Kaisha Toshiba

Yukifumi Oyama

Masatoshi Fukuda

Soichi Homma

Naoyuki Komuta

Shinya Fukayama

Yuji Karakane

Masayuki Miura

Satoshi Tsukiyama

Kazuhiro Murakami

Yuka Akahane

Keisuke Taniguchi

A semiconductor device manufacturing method includes stacking a second semiconductor chip on a first surface of a first semiconductor chip such that the at bump electrode overlies the position of a first through silicon via in the first semiconductor chip, stacking a third semiconductor chip on the second semiconductor chip such that a second bump electrode on the second semiconductor chip overlies the position of a second through silicon via in the third semiconductor chip to form a chip stacked body, connecting the first and second bump electrodes of the chip stacked body to the first and the second through silicon vias by reflowing the bump material, placing the chip stacked body on the first substrate such that the first surface of the first semiconductor chip faces the second surface, and sealing the second surface and the first, second, and third semiconductor chips with a filling resin.

Semiconductor device manufacturing method

A semiconductor device includes a wiring substrate having a first surface, a stacked body on the first surface, the stacked body comprising a first chip, a second chip having a through via and positioned between the first chip and the first surface, and a third chip, a first resin contacting the first surface and the third chip, and a second resin sealing the stacked body. The first and second resins are made of different materials.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a semiconductor chip in which a first bump is provided on a first surface, a plurality of first adhesives are provided on the first surface of the semiconductor chip, and a second adhesive is provided on the first surface of the semiconductor chip, and of which a layout area on the first surface is smaller than a layout area of the plurality of first adhesives. In comparison to a first adhesive that is farthest from the center or a moment of inertia of the first surface of the semiconductor chip among the plurality of the first adhesives, the second adhesive is provided farther from the center or the moment of inertia of the semiconductor chip.

Semiconductor device

According to one embodiment, a first electrode is formed on a first face of a first semiconductor chip, and a second electrode and a protrusion are formed on a second face of a second semiconductor chip. The first semiconductor chip and the second semiconductor chip are spaced from one another by the protrusion in such a manner that the first face and the second face face each other. The first semiconductor chip and the second semiconductor chip are subject to reflow to be electrically connected to each other, and then the protrusion is cured at a temperature lower than a reflow temperature.

Semiconductor device and method of manufacturing the semiconductor device

A method for manufacturing a semiconductor device includes determining a position of a first semiconductor chip having a plurality of first electrodes, using one or more first alignment marks formed on the first semiconductor chip, determining a position of a second semiconductor chip having a plurality of second electrodes, using one or more second alignment marks formed on the second semiconductor chip, moving the second semiconductor chip relative to the first semiconductor chip, based on the determined positions of the first and second semiconductor chips, such that the second electrodes are aligned with the first electrodes, after said moving, stacking the second semiconductor chip on the first semiconductor chip, such that the first electrodes are electrically connected to the second electrodes, and calculating a misalignment amount between the first semiconductor chip and the second semiconductor chip stacked thereon.

Growing community of inventors

Yokkaichi Mie, Japan

Yukifumi Oyama