Semiconductor Energy Laboratory Co., Ltd.

Yukie Suzuki

Shunpei Yamazaki

Yasuyuki Arai

Hideaki Kuwabara

Hajime Kimura

Yoshitaka Moriya

Ikuko Kawamata

Yasuo Nakamura

Tatsuya Honda

Shinji Maekawa

Hironobu Shoji

Yoshiyuki Kurokawa

Yoshiaki Oikawa

Osamu Nakamura

Toru Takayama

Hidekazu Miyairi

Yoshifumi Tanada

Kosei Noda

Kensuke Yoshizumi

Noriko Shibata

Shuhei Takahashi

Kazuko Ikeda

Koichiro Tanaka

Yoshiaki Yamamoto

Gen Fujii

Kazuo Nishi

Kunio Hosoya

Kyosuke Ito

Takayuki Inoue

Saishi Fujikawa

Satoshi Kobayashi

Erumu Kikuchi

Hiroko Yamamoto

Syuhei Takahasi

A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Liquid crystal display device

It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body.

Semiconductor device and electronic device having the same

A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is in contact with the metal film, so that a low-resistance region having resistance lower than that of a channel formation region is formed. A region of the metal film, which is in contact with the oxide semiconductor film, becomes a metal oxide insulating film by the heat treatment. After that, an unnecessary metal film is removed. Thus, the metal oxide insulating film can be formed over the low-resistance region.

Semiconductor device and method for manufacturing the same

A change in electrical characteristics is suppressed and reliability is improved in a semiconductor device provided with a transistor including an oxide semiconductor. A semiconductor device includes a transistor. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second insulating film over the first insulating film, an oxide semiconductor film over the second insulating film, a first buffer film over the oxide semiconductor film, a second buffer film over the oxide semiconductor film, a source electrode electrically connected with the oxide semiconductor film, and a drain electrode electrically connected with the oxide semiconductor film. The source electrode is electrically connected with the oxide semiconductor film through the first buffer film. The drain electrode is electrically connected with the oxide semiconductor film through the second buffer film.

Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, or the display module

It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.

Wireless chip and electronic device having wireless chip

An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).

Lighting device

Growing community of inventors

Kanagawa, Japan

Yukie Suzuki