Japan Pionics Co., Ltd.

Other

Tri Chemical Laboratory Inc.

Yukichi Takamatsu

Takeo Yoneyama

Yoshiyasu Ishihama

Koji Kiriyama

Akira Asano

Kazuaki Tonari

Takafumi Ishii

Mitsuhiro Iwata

Shiro Sakai

Yuji Mori

Hong Xing Wang

Yutaka Amijima

Yasushi Iyechika

Kenji Otsuka

Tatsuya Ohori

Youji Nawa

Hideaki Machida

Yoshinao Komiya

Kazushige Shiina

Nobumasa Soejima

Kiichirou Araya

Noboru Suda

Hiroyuki Naoi

Koichi Kiso

Ryuichi Yamaguchi

Kiyoshi Tazuke

Katsuhiro Mihirogi

A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Chemical vapor deposition apparatus

An apparatus for producing powders of metal compound containing oxygen comprising a liquid flow controller, a vaporizer and a reactor, which consists essentially of: means for feeding a gas containing a material and oxygen; means for heating the gas from the side surface of the feeding means; means for cooling the gas positioned at the downstream side of the feeding means; and means for receiving the product generated by the reaction. A process and products for producing powders of metal compound containing oxygen comprising the steps of: feeding at least one material selected from a liquid material and a solution material obtained by dissolving solid ingredient in organic solvent via a liquid flow controller into a vaporizer; vaporizing the materials in the vaporizer; adding oxygen; heating; cooling; and crystallizing. The process and the apparatus enable easily mass-producing fine powders of metal compound containing oxygen used as materials for optical crystals, nonlinear crystals or magneto-optical crystals with reasonable production cost.

Process and apparatus for producing powders of metal compound containing oxygen, and the powders produced by the process

A process for producing powders of metal compound containing oxygen including the steps of: feeding at least one material selected from a liquid material and a solution material obtained by dissolving solid ingredient in organic solvent via a liquid flow controller into a vaporizer; vaporizing the materials in the vaporizer; adding oxygen; heating; cooling; and crystallizing. Also disclosed is the product formed by this process, and apparatus used in performing the process. The process and the apparatus enable easily mass-producing fine powders of metal compound containing oxygen used as materials for optical crystals, nonlinear crystals or magneto-optical crystals with reasonable production cost.

A material for forming an insulation film comprising an alkoxide compound of lithium and at least one kind of organic solvent selected from ether, ketone, ester, alcohol, and hydrocarbon. A material for forming an insulation film comprising a carboxylate of lithium, an organic solvent, and tetramethoxysilane or tetraethoxysilane. A film-forming method for forming an insulation film with the use of the material for forming an insulation film. An insulation film-forming over the various substrates by spin coating method, mist deposition method or CVD method with the use of these material becomes possible and enables to expect providing an insulation film of high quality and high purity containing lithium or lithium silicate.

Material for forming insulation film and film-forming method with the use of the material

The present invention provides a vaporizer having a vaporization chamber for a CVD material, a CVD material feed portion supplying the CVD material for the vaporization chamber, a vaporized gas exhaust port and a heater for heating the vaporization chamber, wherein the CVD material feed portion has passageways for the CVD material and for a carrier gas respectively and the passageway for the CVD material has a pressure loss inducer for the CVD material. At the same time, the present invention provides an apparatus for vaporizing and supplying that feeds a CVD material to a vaporizer via a liquid flow controller, and after vaporizing the CVD material that supplies the vaporized gas for a semiconductor production apparatus having a pressure loss-inducer for the CVD material between the liquid flow controller and the vaporizer. According to the present invention, even in the case of vaporizing and supplying with a decrease in a feed amount of a carrier gas to be supplied accompanying the CVD material employing a solid CVD material, reducing and stabilizing both the pressure fluctuation in the vaporizer and the flow rate fluctuation in the liquid flow controller and efficiently vaporizing a CVD material at a desirable concentration and flow rate without causing deposit or adhesion of the solid material in the vaporization chamber can be achieved.

Vaporizer and apparatus for vaporizing and supplying

A vaporizing and supplying method for controlling a liquid CVD material in flow rate with liquid flow rate controllers, supplying a vaporizer with the material, vaporizing the same, and supplying a semiconductor manufacturing apparatus with the vaporized material, which includes installing in parallel, a plurality of liquid flow rate controllers, preferably each having a different controllable range of flow rate, and supplying the vaporizer with the material at a variable flow rate thereof by altering the single use of any of the controllers to the simultaneous use of a plurality thereof or vice versa, and/or switching any of the controllers one after another.

Method for vaporizing and supplying

The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.

Chemical vapor deposition apparatus and chemical vapor deposition method

There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH CH&mdash;SiR , CH CH&mdash;Si(OR) , CH CHCH &mdash;SiR or CH CHCH &mdash;Si(OR) , wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

Cleaning process and cleaning agent for harmful gas

There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway. It is made possible by the apparatus and method to assure high quality crystals without generating a deposit of decomposed products or reaction products on a tubular reactor wall in opposition to the substrate even in the case of carrying out chemical vapor deposition of a large-sized substrate or simultaneously conducting that of a plurality of substrates, or performing the same at a high temperature.

There are disclosed a vaporizer wherein at least a portion of a CVD material feed portion in contact with a CVD material is constituted of a corrosion resistant synthetic resin; and an apparatus for vaporizing and supplying which comprises a cooler and the vaporizer wherein the inside of the CVD material feed portion of the vaporizer and the surface on the side of the vaporization chamber of the CVD material feed portion are constituted of a corrosion resistant synthetic resin; the feed portion in contact with the outside of the vaporizer is constituted of a metal; and the CVD material feed portion which is constituted of a metal and which undergoes heat transfer from the heating means upon heating the vaporization chamber can be cooled with a cooler. The vaporizer and apparatus, when used for supplying a gaseous CVD-material to CVD equipment for producing semiconductors, enables the CVD material to be efficiently vaporized and supplied at desirable concentration and flow rate without causing deposit or adhesion of the CVD material at a CVD material feed port even if a solid CVD-material is used.

Disclosed are a method for supplying a liquid raw material wherein the liquid raw material is deaerated and supplied from a liquid raw material container to a liquid flow control section, the method comprising passing the liquid raw material, supplied from a liquid raw material container by the pressure of a first inert gas, inside of a gas permeable synthetic resin tube, passing a second inert gas having a lower permeability into the synthetic resin tube than the first inert gas along the external surface of the synthetic resin tube whereby the first inert gas dissolved in the liquid raw material is allowed to penetrate into the outside of the synthetic resin tube and then supplying the liquid raw material to the liquid flow control section and an apparatus for supplying a liquid raw material which apparatus is used in the method. The invention ensures that inert gas dissolved in a liquid raw material can be removed easily and efficiently in a semiconductor manufacturing process using a liquid raw material.

Method and apparatus for supplying liquid raw material

An apparatus for vaporizing a liquid material and supplying the material in a gas phase, in which a liquid material for CVD is introduced into a vaporizer at a controlled flow rate, atomized by an ultrasonic atomizing device disposed at the inside or the outside of the vaporizer, heated by a circular flow of a carrier gas and vaporized. When a liquid material for CVD is supplied to a CVD apparatus in the production of semiconductors, the concentration of the material is controlled easily in the vaporization, the concentration of the material in the gas can be changed quickly in response with the change in the flow rate of the material, decomposition of the material does not occur and the operating condition of a CVD apparatus is not restricted.

Apparatus for vaporizing and supplying a material

A process for preparing a nitride film by a chemical vapor deposition method, which entails reacting a material gas including tert-butyl hydrazene as the main component as the main component of a nitrogen source with a material gas of an organometallic compound, a metal halide or a metal hydride to deposit the nitride film on a substrate.

Process for preparing nitride film

A purified alkoxide from which volatile impurities causing polymerization and degradation of the alkoxide are removed to extremely low concentrations. The purified alkoxide can be obtained by distilling a crude alkoxide and stripping the distilled liquid alkoxide by applying ultrasonic vibration while passing an inert gas through the liquid alkoxide. A high quality thin insulating film excellent in flatness with few defects such as voids can be obtained by using the purified alkoxide of the present invention as a CVD material.

Purified alkoxide and process for purifying crude alkoxide

By reacting Si(OR).sub.4 with HF, FSi (OR).sub.3 of high purity can be obtained easily and economically.

Growing community of inventors

Kanagawa, Japan

Yukichi Takamatsu