Mitsubishi Electric Corporation

Renesas Electronics Corporation

Nbc Meshtec Inc.

Yuki Yoshioka

Hiroyuki Harada

Taishi Sasaki

Tetsuya Ueda

Naoki Yoshimatsu

Yuji Imoto

Ken Sakamoto

Tsuruo Nakayama

Osamu Usui

Keitaro Ichikawa

Yusuke Kaji

Nobukazu Motojima

To provide a mesh member such that a static charge can be suppressed. Provided is a mesh member including a mesh woven fabric and a coating layer that is formed on the surface of the mesh woven fabric and contains a carbon nanotube and/or graphene.

Mesh member, sieve, and screen printing plate

An object of the present invention is to suppress a crack in a sealing resin and a warpage in a semiconductor device in a power semiconductor device. A power semiconductor device includes: a semiconductor element; a terminal; a chassis; and a sealing resin sealing the semiconductor element and the terminal in the chassis. The sealing resin includes: a first sealing resin covering at least the semiconductor element; and a second sealing resin formed on an upper portion of the first sealing resin, and in an operation temperature of the semiconductor element, the first sealing resin has a smaller linear expansion coefficient than the second sealing resin, and a difference of a linear expansion coefficient between the first sealing resin and the terminal is smaller than a difference of a linear expansion coefficient between the second sealing resin and the terminal.

Power semiconductor device with first and second sealing resins of different coefficient of thermal expansion

A semiconductor chip () is disposed on the insulation substrate (). A lead frame () is bonded to an upper surface of the semiconductor chip (). A sealing resin () covers the semiconductor chip (), the insulation substrate (), and the lead frame (). A stress mitigation resin () having a lower elastic modulus than that of the sealing resin () is partially applied to an end of the lead frame ().

Semiconductor device and power conversion device

An object of the present invention is to provide a highly reliable semiconductor device that allows voids remaining in a bonding material to be reduced. The semiconductor device includes a semiconductor chip, an insulation substrate, a metal base plate, a resin section, and a bump. The semiconductor chip is warped into a concave shape. On the insulation substrate, the semiconductor chip is mounted by bonding. The metal base plate has the insulation substrate mounted thereon and has a heat dissipation property. The resin section seals the insulation substrate and the semiconductor chip. The bump is disposed in a joint between the semiconductor chip and the insulation substrate. A warp amount of the semiconductor chip warped into a concave shape is equal to or greater than 1 &#x3bc;m and less than a height of the bump.

Semiconductor device

A semiconductor device includes: a plurality of input circuits each of which receives one of an analog signal and a digital signal, the input circuits being supplied a power supply; a selector that selects one of the input circuits; and an analog-to-digital (AD) converter that performs AD conversion of an analog signal input to the selected input circuit. After the selector selects one of the input circuits, the selector selects another of the input circuits. When the selector selects one of the input circuits and one digital signal of others of the input circuits is changed, the selector does not select another of the input circuits.

A lead frame includes a plurality of circuit patterns which each have a die pad and an electrode terminal portion and are disposed in a band shape, a tie bar, a frame portion and a suspension lead. Cut are a connection portion between electrode terminals and the frame portion, a connection portion between the frame portion and the tie bar at both end portions in a disposition direction of circuit patterns, and a connection portion from a connection part of the frame portion with the tie bar, between the circuit patterns to a part of the frame portion extending in the disposition direction. The electrode terminal portion is bent to extend to a direction of an upper surface of a semiconductor element. The lead frame is collectively resin-sealed while exposing the tie bar and the electrode terminal portion above the tie bar.

Semiconductor device and manufacturing method thereof

According to one aspect, a semiconductor device () includes: an input circuit (_) configured to receive an analog signal, the analog signal and a digital signal being selectively input; an input circuit (_) configured to be driven by a power supply common to the input circuit (_) and receive a digital signal, the digital signal and an analog signal being selectively input; an AD converter () configured to perform AD conversion of the analog signal input to the input circuit (_); an edge detection circuit () configured to detect an edge of the digital signal input to the input circuit (_); and a control unit () configured to execute predetermined processing on a result of the AD conversion by the AD converter () based on a result of the detection by the edge detection circuit ().

Growing community of inventors

Tokyo, Japan

Yuki Yoshioka