Hamamatsu-photonics K.k.

Yuki Yoshida

Katsumi Shibayama

Tomoya Taguchi

A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second semiconductor regions of a second conductivity type forming pn junctions with the first semiconductor region are going to be formed, in a side of the second main surface. A textured region is formed on surfaces included in the plurality of planned regions, in the second main surface. The plurality of second semiconductor regions are formed in the plurality of planned regions after forming the textured region. The first main surface is a light incident surface of the semiconductor substrate.

Method for manufacturing back surface incident type semiconductor photo detection element

A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a first semiconductor region of a first conductivity type, and a plurality of second semiconductor regions constituting pn junctions with the first semiconductor region. The semiconductor substrate includes the plurality of second semiconductor in a side of the second main surface. Each of the plurality of second semiconductor regions includes a first region including a textured surface, and a second region including no textured surface. A thickness of the first region at a deepest position of recesses of the textured surface is smaller than a distance between a surface of the second region and the deepest position in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

Back surface incident type semiconductor photo detection element

A semiconductor substrate includes first and second main surfaces opposing each other. The semiconductor substrate includes second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. The second semiconductor regions are two-dimensionally distributed in a first direction and a second direction orthogonal to each other when viewed in a direction orthogonal to the semiconductor substrate. The first region and the second region are adjacent to each other in a direction crossing the first direction and the second direction. The textured surface of the first region is located toward the first main surface in comparison to the surface of the second region in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

Backside illuminated semiconductor photodetection element

A semiconductor substrate includes a first main surface and a second main surface opposing each other. The semiconductor substrate includes a plurality of second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. An insulating film includes a first insulating film covering surfaces of the second semiconductor regions, and a second insulating film covering peripheries of pad electrodes. The pad electrodes include a first electrode region in contact with the second region, and a second electrode region continuous with the first electrode region. The second electrode region is disposed on at least a part of a region included in the first insulating film and corresponding to the first region. The first main surface is a light incident surface of the semiconductor substrate.

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Hamamatsu, Japan

Yuki Yoshida