Nippon Telegraph and Telephone Corporation

The University of Tokyo

Kabushiki Kaisha Toyota Jidoshokki

Mitsubishi Heavy Industries Engine & Turbocharger, Ltd.

Hitachi, Ltd.

Mitsubishi Heavy Industries Limited

Nippon Shokubai Co., Ltd.

Kansai Paint Company, Ltd.

Mitsubishi Materials Electronic Chemicals Co., Ltd.

Yuki Yamada

Atsuo Yamada

Masahiro Nada

Fumito Nakajima

Tomoyuki Kawai

Hideaki Matsuzaki

Yoshihiro Nakagaki

Kohei Mase

Yuki Hasegawa

Nobuhiro Goda

Junichi Niwa

Kenji Usui

Yoshihiro Hayashi

Akira Shimizu

Shinji Fujiwara

Toyotaka Yoshida

Kenichiro Iwakiri

Yosuke Dammoto

Yoji Akiyama

Yutaka Fujita

Tetsuichi Kudo

Tsunetoshi Honda

Manabu Miyoshi

Bipin Gupta

Takeshi Kamiya

Yasutaka Sumida

Hironobu Ono

Minoru Ishikura

Toshihide Yoshimatsu

Koji Yonehara

Yusuke Yashiro

Hiroyuki Sasaki

Takayuki Tsuchida

Shinsuke Hamada

Noritaka Mizuno

Takashi Nakayabu

Hitoshi Aikiyo

Shin-ichi Okuoka

Shoko Tatsumi

Katsunori Hirai

Shotaro Watabe

Jun Akikusa

Shota Miura

Seongjae Ko

Fujun Li

Haosheu Zhou

Makoto Yaegashi

Wataru Kawai

Toshiya Arakawa

Yosuke Suga

Yoshiyuki Ogasawara

Mitsuhiro Hibino

Jianhui Wang

Shin-Ichi Okuoka

An electric compressor comprising: an electric motor; a rotation shaft configured to be driven by the electric motor; two impellers respectively provided to both ends of the rotation shaft; two housings that respectively contain the two impellers; and an intake manifold pipe configured to branch off from one intake pipe to supply air to each of the two housings. Each of the two housings includes an intake port which opens in a direction intersecting the axial direction of the rotation shaft and to which the intake manifold pipe is connected.

Electric compressor

According to the present invention, an electrolyte is composed of one or more lithium salts of asymmetric imides each having a perfluoroalkyl group, or a mixed salt of a lithium salt of an asymmetric imide having a perfluoroalkyl group and a lithium salt of a symmetric imide having a perfluoroalkyl group. The composition ratio of the one or more lithium salts and the mixed salt is expressed by (lithium salt of asymmetric imide)(lithium salt of symmetric imide)(wherein x is from 0.1 to 1.0) in terms of the molar ratio; the asymmetric imide lithium salt is (CFSO)(CFSO)NLi or (CFSO)(CFSO)NLi; the symmetric imide lithium salt is (CFSO)NLi; and the composition of an electrolyte solution according to the present invention contains 1.0 mole or more but less than 2 moles of a solvent per 1 mole of the one or more lithium salts or the lithium salts of the mixed salt.

Aqueous electrolyte solution for energy storage devices and energy storage device comprising this aqueous electrolyte solution

In this centrifugal compressor, when a passage cross-section of a bypass passage at a connection point where the bypass passage and a compressor inlet passage are connected to each other is defined as an outlet cross-section of the bypass passage, a range of the outlet cross-section on the downstream side of the center of the outlet cross-section in the axial direction of an impeller and on the upstream side of the center in the rotation direction of the impeller is defined as a first range, and a portion of a passage wall surface of the bypass passage at the outlet cross-section that belongs to the first range is defined as a first-range wall surface portion, at least the first-range wall surface portion of the passage wall surface of the bypass passage at the outlet cross-section is formed from a curved line.

Centrifugal compressor and turbocharger

There is provided an element structure of an avalanche photodiode that can operate in a high gain state while having high reliability and low noise property. There is produced an avalanche photodiode including at least a multiplication layer and a light absorbing layer between first and second semiconductor contact layers, in which an area of the first semiconductor contact layer is at least smaller than an area of the multiplication layer, the avalanche photodiode having an electric field relaxation layer configured to be depleted at an operating voltage between the first semiconductor contact layer and the multiplication layer.

Avalanche photodiode

A structure includes an insulating layer on a semiconductor substrate, and a first through-hole and a second through-hole formed in the insulating layer. The second through-hole is formed in the insulating layer at a set distance from the first through-hole. The structure also includes a first electrode portion and a second electrode portion. The first electrode portion is formed by filling the first through-hole. The first electrode portion includes a probing pad on the insulating layer. The probing pad is wider than an opening area of the first through-hole. The second electrode portion is formed by filling the second through-hole. The second electrode portion includes a probing pad on the insulating layer. The probing pad is wider than an opening area of the second through-hole.

Inspection structure and inspection method

Provided is a semiconductor light receiving element which can achieve a high-speed operation without sacrificing light receiving sensitivity while increasing the margin of a manufacturing process. The semiconductor light receiving element according to the present invention is characterized by comprising: a semiconductor layer doped with a first impurity; a semiconductor light absorption layer in which a band gap energy is adjusted to absorb incident light on the semiconductor layer doped with the first impurity; a semiconductor layer on the semiconductor light absorption layer and doped with a second impurity; and a metal electrode contacting side surfaces of the semiconductor layer doped with the second impurity, wherein side surfaces of the metal electrode are surfaces parallel to a growth direction of the semiconductor layer doped with the second impurity.

Semiconductor light receiving element

A first n-type contact layer, a second n-type contact layer, a multiplication layer, an electric field control layer, a light absorbing layer, and a p-type contact layer are layered in this order on a substrate. The second n-type contact layer is formed between the first n-type contact layer and the light absorbing layer, is made to have an area smaller than that of the light absorbing layer in a plan view, and is disposed inside the light absorbing layer in a plan view.

Optical receiving element and manufacturing method therefor

A light-receiving device includes: a plurality of light-receiving elements arranged in a row on a main surface of a substrate and a first reflection surface and a second reflection surface formed on the substrate to extend in the arrangement direction with the row of the plurality of light-receiving elements interposed therebetween. Each of the first reflection surface and the second reflection surface includes an inclined surface forming one flat surface formed from a main surface of the substrate on which each light-receiving element is formed to a back surface side of the substrate.

Photoreceiver and optical receiver having an inclined surface

A light receiving device includes a semiconductor optical amplifier formed on a principal surface of a first substrate. The semiconductor optical amplifier has a first reflection portion that is formed by an end face at one end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The semiconductor optical amplifier also has a second reflection portion that is formed by an end face at the other end thereof, the end face being formed to be oblique to the principal surface of the first substrate. The light receiving device further includes a second substrate having a back surface bonded to a back surface of the first substrate, and a photodiode formed on a principal surface of the second substrate.

Light receiving device and method of manufacturing the same

A substrate, a first n-type contact layer, a buffer layer, a multiplication layer, an electric field control layer, an absorption layer, and a p-type contact layer are provided. An electrically conductive layer is formed in a central portion of the buffer layer. The substrate is made of a semiconductor having thermal conductivity higher than that of InP, such as SiC, and the first n-type contact layer is made of the same semiconductor as that of the substrate but having n-type conductivity. An n electrode is formed over the first n-type contact layer via a second n-type contact layer.

Avalanche photodiode and method for manufacturing same

An embodiment avalanche photodiode includes a substrate, an n-type contact layer, a buffer layer, a multiplication layer, a field-control layer, an absorption layer, and a p-type contact layer. A conductive layer is formed in a central part of the buffer layer. The substrate is constituted of a semiconductor with a higher thermal conductivity than InP such as SiC, and the n-type contact layer is constituted of a same semiconductor as the substrate and is made n-type.

A nozzle vane of a variable geometry turbocharger comprises: a nozzle vane body rotatably disposed in an exhaust gas passage defined between a shroud surface and a hub surface; and a flange portion provided on at least one of a shroud-side end surface or a hub-side end surface of the nozzle vane body, and formed around a center of rotation of the nozzle vane body. The flange portion is formed to satisfy the expression (i): R1&#x3c;R2 or (ii): R4&#x3c;R3, where R1 is the shortest distance from the center of rotation to an outer edge of the flange portion on the trailing edge side and on a suction surface of the nozzle vane, R2 is the shortest distance from the center of rotation to the outer edge of the flange portion on the leading edge side and on the suction surface of the nozzle vane, R3 is the shortest distance from the center of rotation to the outer edge of the flange portion on the leading edge side and on a pressure surface of the nozzle vane, and R4 is the shortest distance from the center of rotation to the outer edge of the flange portion on the trailing edge side and on the pressure surface of the nozzle vane.

Nozzle vane

An electrolytic solution of a nonaqueous electrolyte secondary battery contains a metal salt, and an organic solvent having a heteroatom and satisfies Is&#x3e;Io, when an intensity of an original peak of the solvent is represented as Io and an intensity of a peak resulting from shifting of the original peak is represented as Is. For the negative electrode, (1) a graphite whose G/D ratio of G-band and D-band peaks in a Raman spectrum is not lower than 3.5; (2) a carbon material whose crystallite size, calculated from a half width of a peak appearing at 2&#x3b8;=20 degrees to 30 degrees in a X-ray diffraction profile is not larger than 20 nm; (3) silicon element and/or tin element; (4) a metal oxide configured to occlude and release lithium ions; or (5) a graphite whose ratio (long axis/short axis) is 1 to 5.

Nonaqueous electrolyte secondary battery

A centrifugal compressor according to an embodiment includes a compressor impeller, a compressor housing, a suction-surface-side member disposed on a suction surface side of the compressor impeller, and a piezoelectric vibrator disposed in at least one of the compressor housing or the suction-surface-side member. The compressor housing and the suction-surface-side member have wall surfaces defining a space surrounded by the compressor housing and the suction-surface-side member. The wall surface of the at least one of the compressor housing or the suction-surface-side member is at least partially vibratable by operation of the piezoelectric vibrator.

To provide a nonaqueous electrolyte secondary battery that suppresses elution of Al from a positive electrode current collector formed of aluminum or an aluminum alloy, and is superior in thermal characteristics and input-output characteristics. Provided is a nonaqueous electrolyte secondary battery including a positive electrode, a negative electrode, and an electrolytic solution. The positive electrode has a positive electrode current collector formed of aluminum or an aluminum alloy. The electrolytic solution contains a metal salt and an organic solvent having a heteroelement. Regarding an intensity of a peak derived from the organic solvent in a vibrational spectroscopy spectrum of the electrolytic solution, Is&#x3e;Io is satisfied when an intensity of an original peak of the organic solvent is represented as Io and an intensity of a peak resulting from shifting of the original peak is represented as Is.

Growing community of inventors

Tokyo, Japan

Yuki Yamada