Hitachi, Ltd.

Kabushiki Kaisha Toshiba

Ebara Corporation

Bridgestone Corporation

Toshiba Electronic Devices & Storage Corporation

Mitsubishi Electric Corporation

Disco Corporation

Adv Antest Corporation

Nippon Sheet Glass Company, Limited

Dexerials Corporation

Fujitsu General Limited

Tokai National Higher Education and Research System

Altron Corporation

Dhf America, LLC

Konica Minolta, Inc.

Yuki Watanabe

Atsushi Hiroike

Hidesato Saruwatari

Dai Yamamoto

Keita Yagi

Norio Takami

Daisuke Matsubara

Ataka Takei

Tomoaki Ito

Hiromichi Kuriyama

Ravigopal Vennelakanti

Kenichi Morita

Manish P Gupta

Tomokazu Murakami

Tsuneya Kurihara

Masahide Kinami

Takashi Kimura

Keigo Hoshina

Yoshihisa Shinya

Masanori Tanaka

Tetsuro Kano

Naoto Akira

Hideki Satake

Tomoaki Yoshinaga

Kenichi Yoneji

Yoshihiro Kato

Akira Ito

Takeshi Fujiwara

Masato Ishikawa

Kazutaka Kamitani

Yoichi Shiokawa

Shinya Okamoto

Masakazu Mori

Kazuya Kuriyama

Akira Maeki

Nobuo Nukaga

Quan Kong

Toshimitsu Sasaki

Masato Nakazato

Yosuke Naito

Yoshiki Tanaka

Chandrasekar Venkatraman

Tsuyoshi Hayashi

Naoya Kimura

Nobuyasu Negishi

Toshiaki Dozaka

Hideya Tamura

Kotaro Hirayama

Kenta Onishi

Kotaro Toya

Shinju Watanabe

Shigefumi Okada

Teruyuki Sasaki

Hiroyuki Urabe

Qingzhu Duan

Kenji Kamiya

Rahul Vishwakarma

Nam Huyn

Shota Tanoue

Kimitake Mantoku

Hidetoshi Watanabe

Masao Kuwabara

Naoto Kominato

Kazumitsu Moriyama

Yuichiro Harada

Tomoyuki Itakura

Toshitada Nakazawa

Shuichi Inage

Kazuhiro Iezumi

Keisuke Kusunoki

Kazuhiro Tsujikawa

Akira Takeya

Hiroshi Tozaki

Koji Miyauchi

Nachiketa Chauhan

Hotaka Kayano

Rei Shibata

Toyoaki Murohara

Shinya Asano

Toshio Kokuryo

Shohei Morishima

Ryo Hara

Yasumitsu Shirasuna

An electrode includes an active material-containing layer that contains active material particles and a binder containing a polymer. The active material particles contain a lithium-containing nickel-cobalt-manganese composite oxide represented by LiNiCoMnMOwhere 0.9≤a≤1.2, 0<x≤0.5, 0<y≤0.5, 0<z≤0.1, x≥y, 0.4≤1−x−y≤0.8, and M is at least one element selected from B, Mg, Al, Si, Ca, Ti, Zn, Zr, Sn, and W. The polymer has a repeating unit derived from vinylidene fluoride and one or more peaks in a nuclear magnetic resonance spectrum with fluorine-19 as a detection nucleus are located in the range of −90 ppm or higher and −88 ppm or lower.

Electrode, nonaqueous electrolyte battery, and battery pack

A magnetic-field generator () is provided to be used in construction of a cell sheet (), and include s a magnetic circuit assembly () configured to generate a magnetic field for the construction of the cell sheet () using magnetic force caused by the magnetic field wherein the magnetic force is substantially transverse to a plane defined by the cell sheet (), and a power control system () configured to generate and control electric power to magnetically charge the magnetic circuit assembly () using the electric power.

Magnetic-field generator for a cell sheet

A suction holding table for holding a holdable object under suction includes a base seat rotatable about a rotational axis, and a plurality of holders erected from the base seat and angularly spaced at equal angular intervals along a circle around the rotational axis, in which each of the holders has an upper surface functioning as a holding surface with a suction port defined therein, and attract the holdable object to the holder under a negative pressure applied via the suction port.

Suction holding table and processing apparatus

A positive electrode for nonaqueous electrolyte battery includes specific peaks in pyrolysis GC/MS measurement, and includes specific pore diameters and pore volumes in a pore distribution curve attained by a mercury intrusion method.

Positive electrode for nonaqueous electrolyte battery and nonaqueous electrolyte battery

An electrode according to an embodiment contains an electrode mixture layer containing an active material and a conductive assistant. In a logarithmic differential pore volume distribution by a mercury intrusion method, the electrode mixture layer satisfies: a ratio P/Pwithin a range of 2 or more and less than 8, and a ratio S/Swithin a range of 3 or more and less than 10. Pis a value of a maximum logarithmic differential pore volume in a pore diameter range of 0.1 μm or more and 1 μm or less. Pis a value of a logarithmic differential pore volume of a pore diameter of 0.03 μm. Sis an integrated value in a pore diameter range of 0.1 μm or more and 1 μm or less. Sis an integrated value in a pore diameter range of more than 0 μm and less than 0.1 μm.

Electrode and nonaqueous electrolyte battery

A substrate processing apparatus includes a polishing head defining plural pressure chambers Dto Dfor pressing a wafer W on a polishing pad, a pressure control unit performing pressure feedback control by individually controlling pressures in the pressure chambers Dto D, a film thickness measurement unit measuring a film thickness distribution of the wafer W being polished, a storage unit storing multiple pieces of information on a preset pressure of the pressure chambers Dto D, and a response characteristic acquisition unit changing the preset pressure every time a predetermined condition is satisfied during polishing of the wafer W, measuring a polishing rate applied to the wafer W, and acquiring a response characteristic of the polishing of the wafer W. The response characteristic indicates responsiveness of the polishing of the wafer W to the pressure feedback. The response characteristic is acquired based on the obtained polishing rates.

Substrate processing apparatus

A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Polishing method and polishing apparatus

In example implementations described herein, person images obtained by object detection and tracking are stored in an image database. Then the system automatically samples a person image as a query of image search for past images. Filtering is performed on the search results to extract a person images having a similarity higher than certain threshold. Travel time is calculated by sorting information (camera identifier, time) attached to person images on a timeline, and the system detects gap between periods that the person appears in frame.

Method and apparatus for people flow analysis using similar-image search

A method of automatically determining optimum recipe parameters constituting an operation recipe of an optical film-thickness measuring device within a short period of time is disclosed. The method includes storing in a memory a plurality of parameter sets each including a plurality of recipe parameters constituting an operation recipe; performing simulation of change in film thickness with polishing time with use of the plurality of parameter sets and data of reference spectra of reflected light from a polished substrate, the reference spectra being stored in a data server; inputting at least one index value for evaluating a manner of the change in film thickness into an evaluation calculation formula to calculate a plurality of comprehensive evaluation values for the plurality of parameter sets; and selecting an optimum one of the plurality of parameter sets based on the plurality of comprehensive evaluation values.

Method, apparatus, and system for determining optimum operation recipe for optical film-thickness measuring device

Example implementations described herein are directed to an asset management system configured to facilitate real-time inventory recognition with image analysis tagged with positional information. The example implementations described herein also provide the method and process to improve the accuracy of the pipe detection for counting with various approaches. Referring the expected number of the pipes, example implementations utilize the pipe detection algorithm, as well as the bounding box of the pipe stack, use the knowledge of the physical size of the pipe stack, and analyze a pipe stack from the images of two directions at the end.

Inventory count method and asset management system

An indoor unit of an air-conditioning apparatus includes a housing defining an outer shape of the indoor unit, and a pipe hole-opening groove section that is in a form of grid-like grooves on an inner surface of the housing. The housing has a box-like shape and includes a lower one surface panel forming a lower end of one side surface of the housing, a one end bottom panel forming one end of a bottom surface of the housing, a lower other surface panel forming a lower end of the other side surface of the housing, and the other end bottom panel forming the other end of the bottom surface of the housing. The pipe hole-opening groove section is formed in at least one of the lower one surface panel, the one end bottom panel, the lower other surface panel, and the other end bottom panel.

Indoor unit of air-conditioning apparatus

According to one embodiment, a semiconductor integrated circuit includes: a first core that includes a first logic circuit that has a plurality of first scan chains, and a first generator that generates a first test pattern; a second core that includes a second logic circuit that has a plurality of second scan chains, and a second generator that generates a second test pattern; a controller that controls a test operation of the first and second cores. The controller is configured to: obtain a seed for a test pattern from the first generator; supply the obtained seed to the second generator; perform a test on the first and second cores for a same number of cycles; obtain first and second test results respectively from the first and second cores; and compare the first and second test results.

Semiconductor integrated circuit with self testing and method of testing

A polishing method which can acquire an actual position of a film-thickness measurement point, and can therefore apply an optimum polishing pressure to a substrate such as a wafer is disclosed. The method includes: causing a substrate detection sensor to generate substrate detection signals in a preset cycle and causing a film-thickness sensor to generate a film-thickness signal at a predetermined measurement point during polishing of the substrate while the substrate detection sensor and the film-thickness sensor are moving across the surface of the substrate; calculating an angle of eccentricity of a center of the substrate relative to a center of the polishing head from the number of substrate detection signals; correcting a position of the predetermined measurement point based on the angle of eccentricity; and controlling polishing pressure at which the polishing head presses the substrate based on the film-thickness signal and the corrected position of the predetermined measurement point.

According to one embodiment, a semiconductor device includes: a first scan chain and a second scan chain each including a plurality of cascaded flip-flops; a plurality of power supply lines that supply a power supply voltage to the first and second scan chains, extend in a first direction, and are arranged in a second direction intersecting with the first direction; and a clock control circuit that supplies a first clock to the first scan chain and a second clock to the second scan chain, the second clock having timing different to that of the first clock. The plurality of flip-flops are arranged along the second direction.

Semiconductor device

A substrate polishing apparatus includes a top ring for pressing a substrate against a polishing pad to perform substrate polishing; a spectrum generating unit that directs light onto a surface of the substrate of interest for polishing, receives reflected light, and calculates a reflectivity spectrum corresponding to the wavelength of the reflected light; and a storage that stores a plurality of thickness estimating algorithms for estimating the thickness of the polished surface in accordance with the reflectivity spectrum. A plurality of thickness estimating algorithms is selected among the thickness estimating algorithms stored in the storage, and a switching condition is set. The thickness of the polished surface is estimated by using the set thickness estimating algorithms, and if the switching condition is satisfied, the thickness estimating algorithm to be applied is switched.

Substrate polishing apparatus and method

Growing community of inventors

Tokyo, Japan

Yuki Watanabe