Nissan Chemical Industries Limited

Nissan Chemical Corporation

The University of Toyama

Yuki Usui

Takahiro Kishioka

Hiroto Ogata

Tomoya Ohashi

Shigeo Kimura

Hirokazu Nishimaki

Yoshiomi Hiroi

Mamoru Tamura

Taito Nishino

Yasushi Sakaida

Makiko Umezaki

Daisuke Sakuma

Hiromi Kitano

Tadashi Nakaji

Keisuke Hashimoto

Tetsuya Shinjo

Yasunobu Someya

Ryo Karasawa

Yuto Hashimoto

Masakazu Kato

Makoto Gemmei

Provided are a ligand-bearing substrate which has a surface at least partially coated with a polymer (P3) containing structural units represented by the formulae (1) and (1) (in the formulae, R, R, X, Y, L, Q, Q, Q, m1, m2 and n are as described in the claims and description); a raw material for such a substrate; and a method for producing such substrates.

Substrates coated with selective cell separation or cell culture polymers

A method includes applying a composition for forming a resist underlayer film to a substrate having a recess in a surface, and baking the composition for forming a resist underlayer film to form a resist underlayer film for filling at least the recess. The composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent:  wherein Rand Rare each independently a Calkylene group or a single bond, Z is an &#x2014;O&#x2014; group, a &#x2014;S&#x2014; group, or a &#x2014;S&#x2014;S&#x2014; group, and Ar is an arylene group.

Composition for forming resist underlayer film and method for forming resist pattern using same

A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

Composition for forming a coating film for removing foreign matters

The invention provides a resist underlayer film forming composition which contains a compound having a glycoluril skeleton and which prevents collapse of a resist pattern formed on a substrate in a lithography process during semiconductor production; a resist underlayer film which uses this composition; and a method for producing a semiconductor device. The compound is of formula (1-1), wherein each of R-Rrepresents a C-Calkyl group wherein a hydrogen atom is substituted by at least one substituent selected from the group consisting of a hydroxy group, a thiol group, a carboxyl group, C-Calkoxyethyl groups, C-Calkylsulfanyl groups and organic groups containing an ester bond, or a C-Calkenyl group; the R-Rmoieties may be the same as or different from each other; and each of Rand Rrepresents a hydrogen atom or a group selected from among C-Calkyl groups and a phenyl group. 

Resist underlayer film forming composition which contains compound having glycoluril skeleton as additive

A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1):  (wherein Xis a substituent reacting with the crosslinker, Ris a direct bond or a Calkylene group, Xis a Calkyl group, Calkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1&#x2264;(b+c)&#x2264;5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Compositions for forming a protective film against basic aqueous hydrogen peroxide solution, and pattern formation method

A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein Rand Rare each independently a Calkylene group or a single bond, Z is an &#x2014;O&#x2014; group, a &#x2014;S&#x2014; group, or a &#x2014;S&#x2014;S&#x2014; group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an &#x2014;O&#x2014; group, a &#x2014;S&#x2014; group, or a &#x2014;S&#x2014;S&#x2014; group with an epoxy group of a diglycidyl ether compound having an arylene group.

There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.

Cationically polymerizable resist underlayer film-forming composition

There is provided a new material that can form a finer pattern and can be applied to adsorption/adhesion control of various cell species, proteins, viruses, and the like without the limitation of the light source. A light-degradable material comprising: a moiety that is capable of bonding to a surface of a substrate through a siloxane bond; and a structural unit of Formula (2-a) and/or Formula (2-b): (where Rto Rare saturated linear alkyl groups; X is a hydrogen atom or an alkyl group; Z is a carbanion or a sulfo anion; Q is an ester bond group, a phosphodiester bond group, an amido bond group, an alkylene group, or an phenylene group or a combination of these divalent groups; mis an integer of 1 to 200, and n is an integer of 1 to 10).

Light-degradable material, substrate, and method for patterning the substrate

A pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method including: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a fourth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

Pattern forming method using resist underlayer film

A resist underlayer film-forming composition containing a copolymer having a structural unit of Formula (1) and a structural unit of Formula (2), a cross-linkable compound, a cross-linking catalyst, and a solvent. wherein A is a divalent organic group containing a triazine ring, Xis an &#x2014;S&#x2014; group or an &#x2014;O&#x2014; group, Q is a linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 15, the hydrocarbon group may have at least one sulfur atom or oxygen atom in a main chain and at least one hydroxy group as a substituent, n is 0 or 1, Rand Rare each independently a Calkylene group or a single bond, Z is a divalent group having at least one sulfur atom or oxygen atom, and when Xis an &#x2014;O&#x2014; group, Z is a divalent group having at least one sulfur atom.

Resist underlayer film-forming composition containing copolymer that has triazine ring and sulfur atom in main chain

Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or Calkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein Rto Rhave the same definition as ones in the specification.

Composition for forming organic hard mask layer for use in lithography containing polymer having acrylamide structure

There is provided a novel organic silicon compound that can be used for a silane coupling agent. An organic silicon compound of Formula (1): (where Ais Formula (2) or Formula (3): E is Formula (4) or Formula (5): Rand Rare each independently a Calkyl group, Ris a hydrogen atom or a methyl group, Rand Rare each independently a Calkyl group, m, n, and p are each independently an integer of 1 to 5, and q is an integer of 1 to 3).

Organic silicon compound and silane coupling agent containing the same

A material forms a pattern by applying a photosensitive composition to a base material and drying to form a photosensitive coating and performing exposure and development, and a method for forming the pattern. A photosensitive composition includes water-soluble organic particles, and a solvent, wherein the solvent is a poor solvent for the water-soluble organic particles. Preferably, the water-soluble organic particles of the photosensitive composition includes a polymer which contains a unit structure (A) for forming organic particles, a unit structure (B) for forming interparticle crosslinkage, and a unit structure (C) for imparting dispersibility, and the photosensitive composition further includes a photoacid generator. In addition, the water-soluble organic particles of the photosensitive composition includes a polymer which contains the unit structure (A) for forming organic particles, the unit structure (B) for forming interparticle crosslinkage, the unit structure (C) for imparting dispersibility, and a unit structure (D) having a photoacid generating group.

Photosensitive organic particles

There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where Rs are independently a methyl group or an ethyl group; Xs are independently a Clinking group; and Zs are independently a Calkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.

Monolayer or multilayer forming composition

A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a Cfluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3); 

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Toyama, Japan

Yuki Usui