Idemitsu Kosan Company, Limited

Yuki Tsuruma

Shigekazu Tomai

Emi Kawashima

Kazuaki Ebata

Takashi Sekiya

Yoshihiro Ueoka

Shigeo Matsuzaki

Kazuyoshi Inoue

Motohiro Takeshima

Koki Yano

Futoshi Utsuno

Masatoshi Shibata

Yoshikazu Nagasaki

A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below,0.80&#x2264;In/(In+Y+Ga)&#x2264;0.96&#x2003;&#x2003;(1),0.02&#x2264;Y/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(2), and0.02&#x2264;Ga/(In+Y+Ga)&#x2264;0.10&#x2003;&#x2003;(3), and

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Laminated body

A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Structure, method for manufacturing same, semiconductor element, and electronic circuit

A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor

A semiconductor devicewhich comprises a pair of an ohmic electrodeand a Schottky electrodeseparated from each other, and a semiconductor layerin contact with the ohmic electrodeand the Schottky electrode, and which satisfies the following formula (I): in which n is a carrier concentration (cm) of the semiconductor layer, &#x3b5; is a dielectric constant (F/cm) of the semiconductor layer, Vis a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Semiconductor device and electric apparatus using same

A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Laminated article

A sputtering target including a sintered body:

Sputtering target

A thin film transistor () includes a source electrode (), a drain electrode (), a gate electrode (), a gate insulating film (), and a channel layer () that is formed of an oxide semiconductor, the channel layer () having an average carrier concentration of 1&#xd7;10/cmto 5&#xd7;10/cm, and including a high carrier concentration region () that is situated on the side of the gate insulating film () and has a carrier concentration higher than the average carrier concentration, and the channel layer () having a substantially homogenous composition.

Thin-film transistor

A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 10/cmor less and an average crystal diameter of 1 &#x3bc;m or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

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Sodegaura, Japan

Yuki Tsuruma