Japanese Foundation for Cancer Research

Elpida Memory, Inc.

Ps4 Luxco S.a.r.l.

Longitude Semiconductor S.a.r.l.

Yuki Togashi

Kengo Takeuchi

Seiji Sakata

Naoya Fujita

Ryohei Katayama

Yoshitaka Nakamura

Hiroyuki Fujimoto

Noriaki Ikeda

Hiroyuki Kitamura

Osamu Fujita

Satoko Baba

Kazuaki Tonari

Eiichiro Kakehashi

Hiroyasu Kitajima

It is intended to reveal a polynucleotide serving as a novel causative gene of a cancer and, on the basis of this finding, to provide a method for detecting the polynucleotide or a polypeptide encoded thereby, a kit and a primer set for the detection, a method for screening for a substance that inhibits the polypeptide, and a pharmaceutical composition for the treatment of a cancer, containing the inhibiting substance. The detection method of the present invention detects a BRAF fusion protein or a fusion gene encoding the fusion protein, or a PXN or GMDS fusion protein or a fusion gene encoding the fusion protein in a digestive organ-derived sample obtained from a subject.

Fusions and method for detecting same

A polynucleotide, which is a novel causative gene for cancer, is elucidated, and, based on this finding, provided are a method for detecting the polynucleotide, or a polypeptide encoded by the polynucleotide; a kit and a primer set for the detection; a method for screening an inhibitor of the polypeptide; and a pharmaceutical composition for treating a cancer containing the inhibitor. In the detection method of the present invention, an NTRK3 fusion protein, or a fusion gene encoding the fusion protein, or an ETV6 fusion protein, or a fusion gene encoding the fusion protein, in a sample derived from the digestive system obtained from a subject, is detected.

Detection method for NTRK3 fusion

In one device, a first space partitioned by first and second line patters is filled with a multilayer film that is composed of a first silicon film having a high impurity concentration relative to a standard plug impurity concentration and a second silicon film having a low impurity concentration relative to the standard plug impurity concentration, and is divided by forming a groove using a mask film on the side wall of the second line pattern. As a result, expansion of a seam, which is formed only on the second silicon film having a low impurity concentration, is suppressed. After that, an isolation insulating film is embedded in the groove and impurity diffusion is carried out by a heat treatment, so that divided plugs as a whole are made to have the standard plug impurity concentration.

Method for manufacturing semiconductor device

A semiconductor device comprises a material layer including a first surface and a trench with an opening in the first surface. The trench is formed in the material layer. The trench comprises a tapered portion and a vertical portion. The tapered portion is in contact with the opening and comprises a scalloping-forming trench. The vertical portion has a substantially vertical sidewall. A width of the scalloping-forming trench is larger than a width of the vertical portion.

Semiconductor device, method for manufacturing the same, and data processing device

A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.

Semiconductor device and method of manufacturing the same

A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

Hemispherical silicon grain capacitor with variable grain size

Growing community of inventors

Tokyo, Japan

Yuki Togashi