Kobelco Research Institute, Inc.

Kobe Steel, Ltd.

Yuki Tao

Moriyoshi Kanamaru

Akira Nambu

Kohei Nishiyama

Mototaka Ochi

Kenta Hirose

Norihiro Jiko

Yuichi Taketomi

An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO(ZnO)(m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]&#x2265;40 atomic %, [In]&#x2264;15 atomic %, [Sn]&#x2264;4 atomic % are satisfied.

Oxide sintered body and sputtering target

An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains GaInSnO, ZnGaO, and InGaZnO. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]&#x2265;37 atomic %, [Sn]&#x2264;15 atomic %, and [Ga]/([In]+[Zn])&#x2265;0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.

An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 &#x3bc;m or less. In the oxide sintered body, the relations 30 atomic %&#x2264;[In]&#x2264;50 atomic %, 20 atomic %&#x2264;[Ga]&#x2264;30 atomic % and 25 atomic %&#x2264;[Sn]&#x2264;45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaOphase which satisfies the relation [InGaO]&#x2265;0.05.

Oxide sintered body and sputtering target, and method for producing same

An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 &#x3bc;m. X-ray diffraction of the oxide sintered body shows that a ZnSnOphase and an InGaZnOphase are the main phases and that an InGaZnOphase is contained in an amount of 3 volume % or less.

An oxide sintered body is obtained by mixing and sintering a zinc oxide, an indium oxide, a gallium oxide and a tin oxide. The oxide sintered body has a relative density of 85% or more, and has volume ratios satisfying the following expressions (1) to (3), respectively, as determined by X&#x2022;ray diffractometry: (1) (ZnSnOphase+InGaZnOphase)/(ZnSnOphase+InGaZnOphase+InOphase+SnOphase+(ZnO)InO, phase)&#x2267;75% by volume; (2) ZnSnOphase/(ZnSnOphase+InGaZnOphase+InOphase+SnOphase+(ZnO)InOphase)&#x2267;30% by volume; and (3) InGaZnOphase/(ZnSnOphase+InGaZnOphase+InOphase+SnOphase+(ZnO)InOphase)&#x2267;10% by volume, and m represents an integer of 2 to 5.

Provided is a Li-containing phosphoric-acid compound sintered body of both high relative density and very small crystal grain diameter with reduced incidence of defects (voids) such as air holes, the Li-containing phosphoric-acid compound sintered body causing a Li-containing phosphoric-acid compound thin film useful as a solid electrolyte for a secondary cell or the like to be stabilized without any incidence of target cracking or irregular electrical discharge, and offering high-speed film-forming capability. This Li-containing phosphoric-acid compound sintered body contains no defects measuring 50 &#x3bc;m or larger within a 1 mmcross-sectional region in the interior thereof, while having an average crystal grain diameter of no more than 15 &#x3bc;m and a relative density of at least 85%.

Li-containing phosphoric-acid compound sintered body and sputtering target, and method for manufacturing said Li-containing phosphoric-acid compound sintered body

Growing community of inventors

Hyogo, Japan

Yuki Tao