Hoya Corporation

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Yuki Tani

Satoshi Kobayashi

Hiroshi Kawazoe

Hiroaki Yanagita

Kenji Aoki

Hisayuki Takasu

Masahiro Orita

Kunji Shigeto

Shuichi Takeuchi

Misaki Hatsuda

Morihiro Niimi

The invention provides a charged particle beam apparatus capable of observing a sample even when light is emitted from the sample, and a sample observation method using the charged particle beam apparatus. The charged particle beam apparatus includes: a charged particle beam source configured to irradiate a sample with a charged particle beam; a detector configured to detect charged particles emitted from the sample; and a control device configured to generate an image based on an output signal from the detector. The charged particle beam apparatus further includes a filter configured to allow at least a part of the charged particles emitted from the sample to transmit through the filter and configured to shield light emitted from the sample. The filter covers a detection surface of the detector expected from the sample.

Charged particle beam apparatus and sample observation method

An object of the present invention is to provide an ion milling apparatus capable of processing deposits attached to an ion gun and an ion milling method capable of processing deposits attached to an ion gun. The ion milling apparatus includes gas injection means for injecting a gas toward the ion gun, and the gas injection means included in the ion milling apparatus moves the deposits attached to the ion gun by injecting the gas toward the inside of the ion gun.

Ion milling apparatus and ion milling method

The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

Light-emitting device of field-effect transistor type

A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate, an electron injection electrode, a hole injection electrode, and an inorganic light emitting layerdisposed so as to be in contact with both the electrodes. The inorganic light emitting layercontains an ambipolar inorganic semiconductor material and nanocrystalsdispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Quantum dot-dispersed light emitting device, and manufacturing method thereof

Growing community of inventors

Tokyo, Japan

Yuki Tani