Adeka Corporation

Sanken Electric Co., Ltd.

Kyocera Document Solutions Inc.

Kabushiki Kaisha Dnaform

Yuki Tanaka

Yoshihide Hayashizaki

Hiroshi Shikauchi

Tomonori Hotate

Takashi Murakami

Masashi Harada

Ryohei Baba

Masaki Segawa

Yuki Endo

Hiromichi Kumakura

Toru Yoshie

Hiroko Kawaguchi

Hisashi Murase

Tetsuo Kamimoto

Satoru Washiya

Takayoshi Kaneda

Satoshi Kamimura

Yuji Yamazaki

Tomomasa Tezuka

Akihiro Yamaki

Yasumasa Kimura

Yuki Kawai

Shinji Kudoh

Kengo Usui

Masaru Nagahama

Koichiro Abe

Ning Wei

Mikio Kandori

Yusuke Ozawa

Kenichi Yoshikawa

A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes: a unipolar component at least including an epitaxial layer; a transition layer connected to the epitaxial layer; and a bypass component connected to the transition layer; the unipolar component and the bypass component are connected in parallel and the transition layer is configured between the unipolar component and the bypass component.

Semiconductor device and method for forming the semiconductor device

Provided are: a retardation-increasing agent that has excellent compatibility and, when incorporated into a resin film, is capable of not only adjusting the thickness-direction phase difference toward a positive direction but also imparting the film with high retardation; a cellulose-based resin composition comprising the retardation-increasing agent; and a film that is obtained from the cellulose-based resin composition and has excellent optical properties. The retardation-increasing agent comprises a compound represented by the following Formula (1) or (2):  

Retardation-increasing agent, cellulose-based resin composition using same, and film

A semiconductor wafer and a method for forming a semiconductor. The semiconductor wafer includes: a first semiconductor component having a first device; a second semiconductor component having a second device; an insulation layer laterally extending to the first semiconductor component and the second semiconductor component; and a grind layer configured on or adjacent to a backside of the semiconductor wafer. Therefore, chipping or cracking can be decreased or avoided when the grind layer is exposed during the thinning process (such as backside grinding).

Semiconductor wafer and method for forming semiconductor

Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (SiN), a silicon oxide film that includes silicon oxide (SiO), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Semiconductor device

A semiconductor device includes a semiconductor base body having a first main surface and a second main surface, the first main surface and the second main surface being opposite with each other; a Schottky electrode that is disposed on the first main surface and forms a Schottky junction with the semiconductor base body; and a barrier metal layer that is brought into ohmic contact with the first main surface around the Schottky electrode and covers a side surface of the Schottky electrode.

Disclosed is a stretched optical compensation film which is a phase difference film containing a cellulose-based resin and having excellent optical properties. The stretched optical compensation film of the present invention contains 0.5 to 30 parts by mass of a &#x3b2;-diketone compound represented by Formula (I) with respect to 100 parts by mass of the cellulose-based resin. Positions Rand Reach independently represent an alkyl group having 1 to 20 carbon atoms which is optionally substituted, an arylalkyl group having 7 to 20 carbon atoms which is optionally substituted or an aryl group having 6 to 20 carbon atoms which is optionally substituted. Position Rrepresents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms. 

Stretched optical compensation film

A semiconductor device of trench gate type is provided that has achieved both large on-current and high off-state breakdown voltage. Around trench T and between it and electric field relaxation p-layer, low resistance n-layeris provided. Low resistance n-layeris formed deeper than trench T, and shallower than electric field relaxation p-layer, being connected to n-layer (drift layer)just thereunder, and thus low resistance n-layerand n-layerare integrated to form a drift layer. Although low resistance n-layeris n-type as is n-layer, donor concentration thereof is set higher than that of n-layer, thereby low resistance n-layerhaving a resistivity lower than that of n-layer. This low resistance n-layeris provided in on-current path (between electric field relaxation p-layerand trench T), whereby low resistance n-layercan lower the resistance to on-current.

Provided is a cellulose resin composition wherein roll contamination during processing and reduction in the productivity caused by roll contamination are inhibited. The cellulose resin composition is obtained by adding a polyester-based plasticizer to a cellulose resin, the cellulose resin composition being characterized in that the polyester-based plasticizer is produced from a polybasic acid, a polyhydric acid and, as required, a stopper, in which polyester-based plasticizer, components having a molecular weight of 430 or less are removed to an amount of 5 wt % or less.

Cellulose resin composition

A semiconductor device includes a semiconductor substrate, a surface of which is provided with: a source region having a first conductivity type is formed in a body region having a second conductivity type opposite to the first conductivity type; a main electrode connected to the source region and the body region; and a gate electrode, to which a voltage for controlling a current flowing through the main electrode is applied, and the semiconductor device includes: a recess formed in the surface of the semiconductor substrate, wherein the source region is exposed on an inner surface of the recess and the main electrode is connected to the source region at the inner surface of the recess.

The present invention provides a process of solidifying a phosphoric ester-based flame retardant in which high-level purification is not required and stress load is not employed. In the process of solidifying a phosphoric ester-based flame retardant, a seed crystal is added at a temperature of not higher than 55&#xb0; C. and at an amount of 1 to 50 parts by mass with respect to 100 parts by mass of a phosphoric ester compound in a molten state, which compound is represented by the following Formula (I): 

Process for solidification of phosphoric ester-based flame retardants

The invention provides a flame retardant composition comprising 1-99 weight parts of a salt of piperazine and an inorganic compound selected from among piperazine phosphate, piperazine pyrophosphate and piperazine polyphosphate, or a mixture of two or more of these piperazine salts (ingredient (A)), 99-1 weight parts of a salt of melamine and an inorganic compound selected from among melamine phosphate, melamine pyrophosphate and melamine polyphosphate, or a mixture of two or more of these melamine salts (ingredient (B)) (wherein, the sum of ingredient (A) and ingredient (B) is 100 weight parts), 0-50 weight parts of an arbitrary ingredient (ingredient (C)), and 0.01-20 weight parts of a silicone oil having a viscosity at 25&#xb0; C. of 5000 mm/s (ingredient (D)) which is added thereto. This flame retardant not only has superior flame retarding properties, but also has enhanced powder properties and anti-hygroscopic properties, and when it is added to a resin, there is little change of electrical resistance.

Growing community of inventors

Saitama, Japan

Yuki Tanaka