Panasonic Intellectual Property Management Co., Ltd.

Tone Co., Ltd.

Yuki Sugiura

Akito Inoue

Yutaka Hirose

Mitsuyoshi Mori

Hideyuki Arai

Yusuke Sakata

Kentaro Nakanishi

Tatsuya Kabe

Hisashi Aikawa

Shinzo Koyama

Manabu Usuda

Motohiro Hirao

A photosensor includes a plurality of avalanche photodiodes (APD) provided on a first main surface, a first isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a first direction, and a second isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a second direction different from a direction of the first isolation region. The first isolation region and the second isolation region are depleted. At least one of the first isolation region or the second isolation region is terminated at a first connection portion at which the first isolation region and the second isolation region are connected.

Photo sensor and distance measuring system using said photo sensor

A solid-state image sensor includes at least two or more APDs formed on a substrate. First regions are arranged outside the APDs as viewed in plane. Adjacent ones of the APDs and the first regions are separated from each other through a separation region. A first voltage Vis applied to a fourth semiconductor layer of the APD, and a second voltage Vis applied to a fifth semiconductor layer of the first region. The first voltage Vis higher than the second voltage V

Photodetector comprising avalanche photodiodes and first region surrounding avalanche photodiodes

A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.

Light detector

The present invention provides a socket adapterfor an impact wrench to prevent a manipulator ringfrom being intentionally slid, the socket adapter comprising: a main bodyincluding a cylinder sectionhaving an engagement holeto be installed in an insertion squareof the impact wrench, a shank sectionconfigured to attach or detach a socket, and a drum sectionpositioned between the cylinder section and the shank section; a ball locking mechanismadapted to switch the socket between a locked state where the socket cannot be detached and an unlocked state where the socket can be attached and detached by protrusion and retraction of a ballhoused in the shank section; a manipulator ringslidably fitted on the drum section in the axial direction and configured to control the protrusion and retraction of the ball; and a starting resistance imparting meansfor increasing the starting resistance of the manipulator ring when the manipulator ring begins to slide from a locking position where the ball protrudes to an unlocking position where the ball retracts.

Socket adapter for impact wrench

It is made possible to monitor the periphery of a target object more accurately, using an imaging device that generates distance image data by sub-range analysis. For a target object present across first and second distance zones adjacent to each other, a first position at a near end position of the first distance zone, a second position at a boundary position between the first and second distance zones, and a third position indicating the position at a far end position of the second distance zone are obtained. Location data of the target object is generated based on location information of the second position with respect to a straight line connecting the first position and third position.

Imaging device

A photodetector includes: a semiconductor substrate having a first main surface and a second main surface; a first semiconductor layer that is of a first conductivity type, and is included in the semiconductor substrate and closer to the first main surface than to the second main surface; a second semiconductor layer that is of a second conductivity type different from the first conductivity type, and is included in the semiconductor substrate and interposed between the first semiconductor layer and the second main surface; a multiplication region that causes avalanche multiplication to a charge generated in the semiconductor substrate through photoelectric conversion; a circuit region disposed alongside the first semiconductor layer in a direction parallel to the first main surface; at least one isolation transistor disposed in the circuit region; and an isolation region interposed between the first semiconductor layer and the circuit region.

Photodetector

A solid-state imaging device includes: a p-type semiconductor substrate; an n-type first semiconductor layer located above the semiconductor substrate and forming a junction with the semiconductor substrate in the first area; and an n-type second semiconductor layer located between the semiconductor substrate and the first semiconductor layer in the second area outward of the first area and having an impurity concentration lower than an impurity concentration of the first semiconductor layer. The semiconductor substrate and the first semiconductor layer form APD1, and the second semiconductor layer extends to a level below an interface between the semiconductor substrate and the first semiconductor layer in a thickness direction of the semiconductor substrate.

A light detector is configured such that a light receiving portion having APDs and a peripheral circuit portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral circuit portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral circuit portion has an n-type MISFET provided at a p-well and an n-well provided to surround side and bottom portions of the p-well.

Growing community of inventors

Kyoto, Japan

Yuki Sugiura