Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Yuki Sekino

Takashi Izumida

Nobutoshi Aoki

Sanae Ito

According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of conducting layers, a semiconductor layer, a variable resistive element, and a first wiring. The plurality of conducting layers are laminated in a first direction at predetermined pitches. The conducting layers extend in a second direction. The second direction is along the surface of the substrate. The semiconductor layer extends in the first direction. The variable resistive element is disposed at an intersection point between the plurality of conducting layers and the semiconductor layer. The first wiring is opposed to an inside of the semiconductor layer via a gate insulating film. The first wiring extends in the first direction. The semiconductor layer at least includes a first part and a second part. The first part is upward of the conducting layer on a lowermost layer. The second part is downward of the first part. The first part has a first length in a third direction. The third direction is intersecting the first direction and the second direction, and is along the surface of the substrate. The second part has a second length in the third direction. The second length is shorter than the first length.

Nonvolatile semiconductor memory device

According to one embodiment, a method of simulating a manufacturing process of a structure including adjacent components, the method includes causing a computer to perform operations of: importing mesh and material data set for each component; specifying, as a calculation target, a region in a first component in which impurities are to be diffused among the components; setting a virtual film of a desired thickness in contact with the region whose material is the same as that of a second component in contact with the specified calculation target; setting boundary conditions at interface between the region and the virtual film, based on the material data; incorporating the boundary conditions into diffusion equations to solve the diffusion equations of the region and the virtual film; and bringing data on the concentration of impurities of the region obtained by the calculation into data on the structure before the specification of the region.

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Yokohama, Japan

Yuki Sekino