Ablic Inc.

Yuki Osuga

Hirofumi Harada

Mio Mukasa

A second source portion having an impurity concentration lower than that of a first source portion, both forming a source region, includes a first sub-portion having a depth from a bottom surface of the first source portion down to a second height higher than a first height, and a second sub-portion having an upper surface in contact with a part of a bottom surface of the first sub-portion, one side surface in a second direction perpendicular to a first direction in contact with an outer side surface of the trench, another side surface in the second direction, both side surfaces in the first direction, and a bottom surface in contact with the base layer, and having a depth from a bottom surface of the first sub-portion up to at least the first height.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a base layer in an upper part of a substrate and a trench in the substrate. A gate insulating film is on an inner bottom surface and an inner side surface of the trench and a gate electrode is embedded into the trench. The gate electrode is etched so that an upper surface of the gate electrode is at a first height from the bottom of the trench. A source region is in contact with an outer side surface of the trench. A base contact region is in contact with part of the outer side surface of the trench, an upper part of the base layer, and an upper part of the source region. A source electrode is embedded in a remaining part of the trench and in contact with the source region and the base contact region.

Method for manufacturing a vertical semiconductor device

Provided is a semiconductor device having an ESD protection diode and a vertical MOSFET in which desired ESD tolerance is obtained without reducing the active region size or increasing the chip size. The semiconductor device includes: a substrate; a drain region and a source region in the substrate; a base region between the drain region and the source region; a gate electrode comprising a first polysilicon layer, and being in contact with the base region across a gate insulating film so that a channel is formed in the base region; and a bidirectional diode in which the gate electrode, a second polysilicon layer, and a third polysilicon layer are arranged in the stated order in a direction perpendicular to a front surface of the substrate.

Semiconductor device

A semiconductor device includes: a drain region formed on a rear surface side of a substrate; a base layer formed between the drain region and a front surface of the substrate; a trench formed in the substrate; a gate insulating film covering an inner surface of the trench from a bottom of the trench to a first height; a gate electrode filling the trench to the first height; an insulating film filling the trench to a second height higher than the first height; a source electrode filling a remaining part of the trench; a base contact region formed in a surface of the substrate and has one side contacting the source electrode; and a source region having an upper surface contacting a part of a bottom surface of the base contact region, one side contacting a side of the trench and is partially contacting the source electrode.

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Chiba, Japan

Yuki Osuga