Semiconductor Energy Laboratory Co., Ltd.

Yuki Okamoto

Yoshiyuki Kurokawa

Tatsuya Onuki

Shunpei Yamazaki

Takayuki Ikeda

Takanori Matsuzaki

Kei Takahashi

Munehiro Kozuma

Hiroki Inoue

Seiichi Yoneda

Takahiko Ishizu

Minato Ito

Takeshi Aoki

Takuro Ohmaru

Kengo Akimoto

Hitoshi Kunitake

Hajime Kimura

Hideki Uochi

Koji Kusunoki

Shuhei Nagatsuka

Ryota Tajima

Satoru Okamoto

Yuto Yakubo

Yosuke Tsukamoto

Hironobu Takahashi

Shintaro Harada

Katsuki Yanagawa

Toshiki Hamada

Isamu Shigemori

Yasuhiko Takemura

Kiyoshi Kato

Hisao Ikeda

Naoto Kusumoto

Yukinori Shima

Hiromichi Godo

Susumu Kawashima

Hidetomo Kobayashi

Takashi Nakagawa

Yutaka Okazaki

Masashi Oota

Kazuki Tsuda

Yusuke Koumura

Seiya Saito

An electronic device with a novel structure is provided. The electronic device includes a display apparatus, a gaze detection portion, and an arithmetic portion. The display apparatus includes a display portion divided into a plurality of sub-display portions and a functional circuit including a luminance conversion circuit. The gaze detection portion has a function of detecting the user's gaze. The arithmetic portion has a function of allocating the plurality of sub-display portions to a first section or a second section with the use of the detection result of the gaze detection portion. The functional circuit has a function of performing display on the sub-display portion included in the first section with a first driving frequency and performing display on the sub-display portion included in the second section with a second driving frequency lower than the first driving frequency. The luminance conversion circuit has a function of converting image data displayed on the second section to image data with reduced luminance to be displayed in the sub-display portion.

Electronic device

A semiconductor device with high reliability is provided. The semiconductor device includes a memory cell including a first ferroelectric capacitor and a reference memory cell including a second ferroelectric capacitor. In a first period, first binary data is written to the memory cell, and first reference binary data is written to the reference memory cell. In a second period, the first binary data is read from the memory cell, and the first reference binary data is read from the reference memory cell. In a third period, logic operation of the first binary data and the first reference binary data is performed. In a fourth period, second binary data is written to the memory cell, and second reference binary data is written to the reference memory cell. A value of the first binary data and a value of the second binary data are different from each other, and a value of the first reference binary data and a value of the second reference binary data are different from each other.

Driving method of semiconductor device

A display apparatus with a novel structure is provided. The display apparatus includes a first layer and a second layer positioned above the first layer. The first layer includes a driver circuit region, and the second layer includes a pixel array. The pixel array includes a plurality of pixel regions. The driver circuit region includes a control circuit unit and a plurality of local driver circuits. One of the plurality of local driver circuits corresponds to any one of the plurality of pixel regions. The local driver circuit has a function of outputting a driving signal for driving a plurality of pixels included in the corresponding pixel region. The control circuit unit has a function of comparing definition data of an input image signal and aspect ratio data of the pixel array to determine a first region where display is performed and a second region where display is not performed, and outputting, to the local driver circuit corresponding to the second region, a control signal for stopping output of the driving signal.

Display apparatus and electronic device

To provide a battery control circuit with a novel structure, a battery protection circuit with a novel structure, and a power storage device including the battery circuit. The semiconductor device includes n cell-balance circuits (n is an integer greater than or equal to 1). One secondary battery is electrically connected to one cell-balance circuit. The cell-balance circuit includes a comparison circuit, and a memory element is electrically connected to an inverting input terminal of the comparison circuit. The memory element includes a first transistor and a capacitor. A potential is retained. The retained potential changes in accordance with a change in a potential of a negative electrode of the secondary battery. The comparison circuit has a function of comparing the retained potential with a potential of a positive electrode of the secondary battery. Output from the comparison circuit controls a gate voltage of a second transistor electrically connected to the secondary battery in parallel. The first transistor includes a metal oxide including indium in a channel formation region.

Semiconductor device and operating method of semiconductor device

To provide a semiconductor device with a novel structure. The semiconductor device includes an accelerator. The accelerator includes a first memory circuit, a second memory circuit, and an arithmetic circuit. The first memory circuit includes a first transistor. The second memory circuit includes a second transistor. Each of the first transistor and the second transistor includes a semiconductor layer including a metal oxide in a channel formation region. The arithmetic circuit includes a third transistor. The third transistor includes a semiconductor layer including silicon in a channel formation region. The first transistor and the second transistor are provided in different layers. The layer including the first transistor is provided over a layer including the third transistor. The layer including the second transistor is provided over the layer including the first transistor. The data retention characteristics of the first memory circuit are different from those of the second memory circuit.

Semiconductor device

A semiconductor device having a novel structure is provided. The semiconductor device includes a first element layer including a first memory cell, a second element layer including a second memory cell, and a silicon substrate including a driver circuit. The first element layer is provided between the silicon substrate and the second element layer. The first memory cell includes a first transistor and a first capacitor. The second memory cell includes a second transistor and a second capacitor. One of a source and a drain of the first transistor and one of a source and a drain of the second transistor are each electrically connected to a wiring for electrical connection to the driver circuit. The wiring is in contact with a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor and is provided in a direction perpendicular or substantially perpendicular to a surface of the silicon substrate.

Semiconductor device and electronic device having stacked element layers on driver-circuit substrate

A semiconductor device with a novel structure is provided. The semiconductor device includes a silicon substrate including a first circuit, a first element layer including a second circuit, and a second element layer including a third circuit. The first circuit includes a first transistor. The second circuit includes a second transistor. The third circuit includes a memory cell. The memory cell includes a third transistor and a capacitor. The first element layer and the second element layer constitute a stacked block stacked and provided in a direction perpendicular or substantially perpendicular to a surface of the silicon substrate. A plurality of stacked blocks are stacked and provided in the direction perpendicular or substantially perpendicular to the surface of the silicon substrate. Each of the plurality of stacked blocks includes a first wiring provided in the direction perpendicular or substantially perpendicular to the surface of the silicon substrate. The plurality of stacked blocks are electrically connected to each other through the wiring.

A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order when seen from the first conductor side. The first conductor is provided with a first region overlapping with a second conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator provided therebetween, and a second region overlapping with a third conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator provided therebetween. In the second region, a fourth conductor is provided between the first insulator and the first semiconductor.

Memory device

A novel memory device is provided. A first cell array including a plurality of memory cells and a second cell array including a plurality of memory cells are provided to overlap with each other. Two bit lines included in the first bit line pair are electrically connected to part of the memory cells included in the first cell array and to part of the memory cells included in the second cell array. Two bit lines included in the second bit line pair are electrically connected to part of the memory cells included in the first cell array and to part of the memory cells included in the second cell array. In the first cell array, one of the bit lines included in the second bit line pair includes a region overlapping with part of the first bit line pair. In the second cell array, the other of the bit lines included in the second bit line pair includes a region overlapping with part of the first bit line pair.

Memory device including plurality of overlap memory cell arrays with folded bit-lines

The invention of the application is the invention regarding a semiconductor device and a method for driving the semiconductor device. The semiconductor device includes first and second transistors, first to fifth switches, first to third capacitors, and a display element. The first transistor (M) comprises a back gate, a gate of the first transistor is electrically connected to the first switch (M), the second switch (M) and the first capacitor (C) are positioned between the gate of the first transistor and a source of the first transistor, the back gate of the first transistor is electrically connected to the third switch (M), the second capacitor (C) is positioned between the back gate of the first transistor and the source of the first transistor, the source of the first transistor is electrically connected to the fourth switch (M) and a drain of the second transistor (M), a gate of the second transistor is electrically connected to the fifth switch (M), the third capacitor (C) is positioned between the gate of the second transistor and a source of the second transistor, and the source of the second transistor is electrically connected to the display element ().

Semiconductor device and method for driving semiconductor device

A semiconductor device with a novel structure is provided. The semiconductor device includes a plurality of arithmetic blocks each including an arithmetic circuit portion and a memory circuit portion. The arithmetic circuit portion and the memory circuit portion are electrically connected to each other. The arithmetic circuit portion and the memory circuit portion have an overlap region. The arithmetic circuit portion includes, for example, a Si transistor, and the memory circuit portion includes, for example, an OS transistor. The arithmetic circuit portion has a function of performing product-sum operation. The memory circuit portion has a function of retaining weight data. A first driver circuit has a function of writing the weight data to the memory circuit portion. The weight data is written to all the memory circuit portions included in the same column with the use of the first driver circuit.

A highly reliable memory device is provided. On a side surface of a first conductor extending in a first direction, a first insulator, a first semiconductor, a second insulator, a second semiconductor, and a third insulator are provided in this order when seen from the first conductor side. A first region overlapping with a second conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween, and a second region overlapping with a third conductor with the first insulator, the first semiconductor, the second insulator, the second semiconductor, and the third insulator therebetween are provided in the first conductor. In the second region, a fourth conductor is provided between the first insulator and the first semiconductor.

A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND, a node ND, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node NDthrough the capacitor. The comparison circuit has a function of comparing a voltage of the node NDand the voltage of the node ND. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node NDis higher than the voltage of the node ND

Semiconductor device and battery pack

A display apparatus that can display a high-resolution image can be provided. In the display apparatus, a first layer and a second layer are stacked. In the first layer, an arithmetic circuit and a data driver circuit and are provided, and in the second layer, a display portion is provided. In the arithmetic circuit, a neural network is configured. The display portion has a region overlapping with the data driver circuit. The arithmetic circuit has a function of performing arithmetic processing using the neural network on image data and supplying the arithmetically-processed image data to the data driver circuit.

Display apparatus

An imaging device with an arithmetic function in which the circuit size is reduced is provided. The imaging device includes a plurality of pixel blocks. Each of the pixel blocks includes N (N is an integer greater than or equal to 1) first circuits, N second circuits, and a third circuit. Each of the first circuits includes a photoelectric conversion device, and the photoelectric conversion device has a function of converting incident light into an electrical signal and has a function of outputting a first signal that is obtained by binarizing the electrical signal to the second circuit. Each of the second circuits has a function of outputting a second signal that is obtained by multiplying the first signal by a weight coefficient to a third circuit. When the N second signals are output to a wiring electrically connected to the third circuit, addition is performed. The first circuit includes a transistor, and an OS transistor is preferably used as the transistor.

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Kanagawa, Japan

Yuki Okamoto