Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Superbvue Solutions, Inc.

Yuki Nobusa

Kazuhiro Suzuki

Ikuo Fujiwara

Honam Kwon

Keita Sasaki

Masaki Atsuta

Hideyuki Funaki

Takashi Miyazaki

Yoshinori Iida

Isao Takasu

Yasushi Shinjo

Risako Ueno

Shunsuke Tanaka

Noboru Yamamoto

Jiro Yoshida

Masaaki Tsuruta

According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.

Light detector, light detection system, lidar device, and vehicle

Disclosed are a solid-state imaging apparatus, a signal processing method of a solid-state imaging apparatus, and an electronic device, which are capable of correcting uneven sensitivities generated by multiple factors in a broad area and realizing the higher-precision image quality. A correction circuitweight a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in a pixel unit PU that is the correction target and a sensitivity Pi corresponding to a pixel signal of each pixel related to correction in at least one same color pixel unit PU and adjacent to the pixel unit PU that is the correction target by a weighting coefficient Wi. Consequently, the correction coefficient &#x3bc; is calculated by dividing a sum of the weighted sensitivities by a total number n of pixels related to correction.

Solid-state imaging apparatus, signal processing method of solid-state imaging apparatus and electronic device

The molecule detecting apparatus of an embodiment includes a light source, a fluorescent layeremitting different fluorescence depending on the kind of a target moleculecaptured when being irradiated with light from the light source, a photodetectorconfigured to detect fluorescence, and the photodetectoris an array of avalanche photodiodes operating in Geiger mode.

Molecule detecting apparatus

In one embodiment, a photo detector includes a plurality of photo detection elements, a plurality of trenches each provided among a plurality of the photo detection elements, and a wiring provided between the two photo detection elements out of the plurality of photo detection elements to electrically connect to the two photo detection elements. The trenches surround the 2&#xb7;m (m is a positive integer) photo detection elements including the two photo detection elements. And the two photo detection elements are lined in a direction orthogonal to an extending direction of the metal layer for electrical connection.

Photo detector, photo detection system, lidar device and vehicle

A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

Photodetector and lidar device comprising a detector having a PN junction connected to an optically transmissive quench resistor

A photodetector includes a plurality of first light detection elements having a first driving voltage range, the first light detection elements including first semiconductor layers having a first conductivity type and second semiconductor layers having a second conductivity type different from the first conductivity type; and a second light detection element having a second driving voltage range different from the first driving voltage range, the second light detection element including a third semiconductor layer having the first conductivity type and a fourth semiconductor layer having the second conductivity type.

Photodetector, LIDAR, and method of manufactuaring photodetector

In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the first region and the second region, a fourth region of the second conductivity type provided so as to surround a periphery of the second region, in a direction crossing with a direction from the first region toward the second region, and a fifth region of the first conductivity type provided between the first region and the fourth region.

Photo detection element, photo detection system, lidar device and vehicle comprising a fifth region of first conductivity type between a first region and a fourth region

In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the second region and the first region, and a plurality of structure bodies of the first conductivity type which are provided between the first region and the third region separately in a second direction crossing with a first direction from the third region toward the second region.

Photo detection element, photo detector, photo detection system, lidar device and vehicle comprising a plurality of structure bodies separately provided between first and second regions

A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

Photodetector comprising dual cells with different thickness of interposing substrates, photodetection device, laser imaging detection and ranging apparatus and method of manufacturing a photodetector

A photodetector includes a first cell converting incident light into electric charges; and a second cell converting incident light into electric charges; wherein the first cell includes a first semiconductor layer and a second semiconductor layer provided to be closer to a light incident side than the first semiconductor layer, wherein the second cell includes a third semiconductor layer and a fourth semiconductor layer provided to be closer to a light incident side than the third semiconductor layer, wherein a first interface between the third semiconductor layer and the fourth semiconductor layer is located to be closer to the light incident side than a second interface between the first semiconductor layer and the second semiconductor layer.

Photodetector, photodetection device, laser imaging detection and ranging apparatus

An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.

Photodetection device and object detection system using said photodetection device

Photodetector converting ultraviolet light into visible light

According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.

Growing community of inventors

Yokohama, Japan

Yuki Nobusa