Honda Motor Co., Ltd.

Yuki Negoro

Yoshinari Tsukada

Yasuhiro Maeda

Shinya Maita

Genki Nakamura

Provided is an n-channel BiMOS semiconductor device having a trench gate structure, the n-channel BiMOS semiconductor device including: an ndrain layer; a parallel pn layer including ndrift and p pillar layers joined alternately; a composite layer including a p base layer and an nsource layer, the ndrain layer, the parallel pn layer, and the composite layer being provided in order; a high-resistance layer provided between a portion of the p base layer above the p pillar layer and the nsource layer; and a high-resistance layer provided between the p pillar layer and the p base layer, the p pillar layer having an impurity concentration lower than that of the ndrift layer.

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Saitama, Japan

Yuki Negoro