Fujifilm Corporation

Yuki Nara

Atsushi Tanaka

Masayuki Suzuki

Kazuto Shimada

Hidenori Takahashi

Toshihide Ezoe

Takashi Kawashima

Kenichi Umeda

Seiichi Hitomi

Kaoru Aoyagi

Shoichi Nakamura

Seongmu Bak

Takahiro Okawara

Provided are a photosensitive composition for pulse exposure including: a coloring material A; a photoradical polymerization initiator B; and a radically polymerizable compound C, in which a content of a radically polymerizable compound C1 having a weight-average molecular weight of 3000 or higher is 70 mass % or higher with respect to a total mass of the radically polymerizable compound C.

Photosensitive composition

Provided are a radiation-sensitive resin composition having good sensitivity and excellent temporal stability of the sensitivity, a cured film, a pattern forming method, a solid-state imaging device, and an image display device. The radiation-sensitive resin composition includes a resin, a polymerizable compound having an ethylenically unsaturated bond, a photopolymerization initiator, an organic solvent, and water, in which the photopolymerization initiator includes an oxime ester compound having at least one group selected from a branched alkyl group and a cyclic alkyl group, and the content of water is 0.1% to 2% by mass with respect to the mass of the radiation-sensitive resin composition.

Radiation-sensitive resin composition, cured film, pattern forming method, solid-state imaging device, and image display device

There is provided a curable resin composition which is capable of being coated so as to have a film thickness of 20 &#x3bc;m or more and contains a dye having a maximum absorption wavelength in a wavelength range from 600 to 850 nm, and the infrared ray cut filter having a dye-containing layer having a film thickness of 20 &#x3bc;m or more formed from the curable resin composition, and a production method of image sensor chip comprising a step of coating the curable resin composition on a glass substrate to form a dye-containing layer, and a step of adhering the glass plate having the dye-containing layer formed on a solid-state imaging device substrate.

Curable resin composition, production method of image sensor chip using the same, and image sensor chip

An object of the present invention is to provide a near-infrared-absorbing composition capable of forming a cured film having excellent heat resistance while maintaining strong near-infrared shielding properties when a cured film is produced. The near-infrared-absorbing composition of the present invention includes a copper complex obtained by reacting two or more kinds of sulfonic acids represented by General Formula (I) described below or salts thereof with a copper component and a solvent. 

Near-infrared-absorbing composition, near-infrared cut-off filter using same, manufacturing method therefor, camera module, and manufacturing method therefor

The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of InGaZnO, where 0.75&#x3c;x&#x3c;1.10 and 0&#x3c;&#x3b4;&#x2266;1.29161&#xd7;exp(&#x2212;x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFeO, and a method of producing the thin film transistor.

Growing community of inventors

Shizuoka, Japan

Yuki Nara