Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Tdk Corporation

National Institute of Advanced Industrial Science and Technology

Resonac Corporation

Uni-heartous Corporation

Yuki Miyamoto

Shuji Nakao

Shinroku Maejima

Naohisa Tamada

Shigenori Yamashita

Takayuki Saito

Atsushi Hachisuka

Nobuyuki Yoshioka

Koji Taniguchi

Koichiro Narimatsu

Shinya Soeda

Ayumi Minamide

Toshihide Kawachi

Hitoshi Saita

Yukio Sakashita

Koichi Saito

Takeo Ishibashi

Kengo Ochi

Tetsuo Tsuchiya

Atsushi Ueno

Hajime Matsumoto

Shun Sato

Yasuhiro Sato

Takuya Matsushita

Takashi Kumaki

Masayuki Wada

Hiroshi Osaki

Keiichi Sakamoto

An optically softening resin composition contains a compound having a disulfide bond; and a radical scavenger. The compound having a disulfide bond may be a copolymer including a monomer unit having a disulfide bond and a functional group, and a monomer unit having a substituent reactive with the functional group. A curable resin composition contains a monomer having a disulfide bond and a functional group; a monomer having a substituent reactive with the functional group; and a radical scavenger.

Optically softening resin composition, method for producing softened product of optically softening resin composition, curable resin composition and cured product of same, and patterned film and method for producing same

An object is to provide a method of making a metal oxide film with a sufficiently high degree of crystal orientation, without difficulties, at low cost, and with little damage to a base material and the metal oxide film, and to provide laminates and electronic devices using the same. A method includes a step of forming a metal film having a (111) plane, on a base material; a step of forming a metal oxide film on the (111) plane of the metal film; and a step of maintaining a temperature of the metal oxide film formed on the (111) plane of the metal film, at 25-600&#xb0; C. and irradiating the metal oxide film with UV light.

Method of making a metal oxide film, laminates and electronic devices

A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and austenitic nickel-chromium-based superalloy and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.

Method for fabricating dielectric on metal by baking dielectric precursor under reduced pressure atmosphere

A dielectric thin film, comprising a first bismuth layer-structured compound layerexpressed by a composition formula of (BiO)(ABO)or BiABO, wherein 'm' is a positive number, 'A' is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and &#x201c;B&#x201d; is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layerand a lower portion electrode, a second bismuth layer-structured compound layerincluding bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer

High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element

A photomask for focus monitoring of the present invention is provided with a substrate that allows the exposure light to pass through and a unit mask structure for focus monitoring. Unit mask structure for focus monitoring has two patterns, and that are formed on the surface of substrate and a light blocking film that has a rear surface pattern that is formed on the rear surface of substrate for substantially differentiating the incident directions of the exposure light that enters two patterns, and for position measurement. When the dimension of rear surface pattern is L and the wavelength of the exposure light is &#x3bb;, L/&#x3bb; is 10, or greater.

Method of focus monitoring and manufacturing method for an electronic device

A focus monitoring method of the invention is characterized by transferring the pattern of a photo mask for phase shift focus monitor onto a photoresist on a semiconductor substrate by using modified illumination. Photo mask for phase shift focus monitor has first and second light transmitting portions which are adjacent to each other while sandwiching a shielding pattern, and is constructed so that a phase difference other than 180 degrees occurs between exposure light passed through the first light transmitting portion and exposure light passed through the second light transmitting portion. Consequently, a focus monitoring method, a focus monitor system, and a semiconductor fabricating method with high detection sensitivity in the z direction and which do not require changing of an illumination aperture can be achieved.

Focus monitoring method, focus monitoring system, and device fabricating method

Non-telecentric illuminating light obtained by controlling the shape of an opening of an illumination aperture is directed onto a photomask, and a characteristic such that an image of a pattern of the photomask formed by the non-telecentric illumination moves in the direction perpendicular to an optical axis when an image-forming plane is moved in the direction of the optical axis, to perform focus monitoring. This eliminates the need for a special photomask, so that inexpensive and highly precise focus monitoring method, focus monitoring apparatus, and a method of manufacturing a semiconductor device can be obtained.

Focus monitoring method, focus monitoring apparatus, and method of manufacturing semiconductor device

A photomask for focus monitoring of the present invention is provided with a substrate that allows the exposure light to pass through and a unit mask structure for focus monitoring. Unit mask structure for focus monitoring has two patterns, and that are formed on the surface of substrate and a light blocking film that has a rear surface pattern that is formed on the rear surface of substrate for substantially differentiating the incident directions of the exposure light that enters two patterns, and for position measurement. When the dimension of rear surface pattern is L and the wavelength of the exposure light is &lgr;, L/&lgr; is 10, or greater.

Photomask for focus monitoring

The present invention provides a photomask, a semiconductor device, and a method for exposing through the photomask. The photomask comprises a photomask substrate, and an on-mask circuit area including an on-mask circuit pattern and an on-mask test mark area including an on-mask test pattern, both formed on the surface of the substrate, wherein the photomask substrate further includes an on-mask photolithography screening mark area including an on-mask comparison pattern and an on-mask screening pattern, the on-mask comparison pattern has substantially the same configuration as at least a part of the on-mask circuit pattern, and the on-mask screening pattern has substantially the same configuration as at least a part of the on-mask test pattern. The present invention allows it to measure the actual displacement generated from an overlaying (i.e. alignment) process for the purpose of eliminating of an the overlay displacement which can take place in a photolithography process.

Photomask, semiconductor device, and method for exposing through photomask

A semiconductor manufacturing system and method includes an exposure value detector for detecting an exposure value, a pattern size detector for detecting a pattern size, a size comparator for calculating a size difference between the pattern size and a target value, an optimum exposure value calculator for calculating an optimum exposure value based on the exposure value and the size difference, an exposure value controller. In this semiconductor device manufacturing method, the optimum exposure value is calculated based on the exposure value and the size difference, and exposure is performed at the optimum exposure value. A semiconductor device is manufactured by the manufacturing method.

Semiconductor device, manufacturing method thereof and semiconductor manufacturing system

A lot determination apparatus and method and a recording medium having the lot determination method recorded thereon, wherein there can be realized a reduction in the number of times wafers are re-subjected to photolithography and prevention of elimination of a chip lot in a subsequent step, by determination of whether or not a chip is conforming through comprehensive determination of results of a plurality of inspections such as an overlay inspection, an etched pattern inspection, and a resist pattern inspection. A determination is made as to whether or not a lot is defective by comprehensive determination of results of a plurality of inspection processes, thereby preventing elimination of the lot as being nonconforming. As a result, specifications for inspections can be relaxed, which in turn enables a reduction in a reprocessing ratio. Further, no short circuit arises between the first and second patterns while determination equations are satisfied, and elimination of a lot in a subsequent process can be prevented. Link check may be carried out not only for each set of measurement points but also on the basis of analysis of results of all the measurement points. Determination equations may be more generalized.

Lot determination apparatus, lot determination method, and recording medium for storing the method

The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

Registration accuracy measurement mark, method of repairing defect of the mark, photomask having the mark, method of manufacturing the photo mask and method of exposure thereof

A household animal waste collection sheet having a liquid permeable top sheet, a liquid impermeable backing sheet and an absorbent core interposed between the top sheet and the backing sheet, is disclosed. The absorbent core is formed of a pulp layer and particulate super-absorbent polymers disposed on both a top face and a bottom face of the pulp layer. This waste collection sheet has a high rate of liquid-absorption while preventing liquid from flowing backward to the top sheet. Further, the waste collection sheet has a high stiffness.

Growing community of inventors

Tokyo, Japan

Yuki Miyamoto