Kao Corporation

Other

Asahi Glass Company, Limited

National Institute of Advanced Industrial Science and Technology

Sony Corporation

Sanyo Electric Co., Ltd.

Daikin Industries, Ltd.

Fujitsu Corporation

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Renesas Electronics Corporation

Mitsubishi Heavy Industries Limited

Renesas Technology Corp.

Showa Denko K.k.

Yuki Mitsui

Yutaka Ohira

Taisuke Yonemura

Akira Sekiya

Yoshihisa Katsuragi

Hirokazu Takahashi

Atsushi Suzuki

Yasuteru Eguchi

Takuya Watanabe

Takeshi Yasumasu

Tomoshige Umeda

Wataru Okawa

Katsuo Sakai

Kenji Kameda

Hitoshi Murata

Keisuke Matsuyama

Hideki Mori

Kaoru Abe

Takuji Yasukawa

Ginjiro Tomizawa

Katsuya Fukae

Etsuo Wani

Seiji Okura

Hideki Yokomichi

Masaji Sakamura

Tomohito Nakamori

Mitsuyoshi Kashiwagi

Susumu Yamasawa

Yasuhiro Miura

Setsujiro Inaoka

Kenzo Kurihara

An early sign detection device includes a plurality of sensors, a data acquisition unit configured to acquire time series variation data of a physical amount from each of the plurality of sensors, a computation unit configured to compute an occurrence probability of a vibration mode involved in a sudden variant vibration of a detection subject from an amplitude or a phase of the time series variation data of the physical amount at each of the plurality of positions, and a detection unit configured to detect an early sign of the sudden variant vibration on the basis of the occurrence probability of the vibration mode. The plurality of sensors are respectively disposed at a plurality of positions of the detection subject and are each configured to measure the physical amount at a corresponding position of the plurality of positions.

Early sign detection device and early sign detection method

A CVD apparatus cleaning method that efficiently removes by-product such as SiOor SiNadhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

CVD apparatus and method of cleaning the CVD apparatus

A method for producing carbonyl fluoride by continuously supplying carbon monoxide and fluorine into a reaction chamber together with a diluent gas and letting them react with each other, where hydrogen fluoride or carbonyl fluoride is used as the diluent gas.

Methods for producing carbonyl fluoride and apparatus for production

The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Process for producing carbonyl fluoride

A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

Plasma cleaning gas and plasma cleaning method

A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.

Cleaning gas and etching gas

Provided is a preventive, ameliorant or remedy for hypertension excellent in both blood pressure lowering action and blood pressure-rise suppressing action and having high safety. This preventive, ameliorant or remedy for hypertension comprises a coffee bean extract.

Preventive, alleviative or remedy for hypertension

The first chamber cleaning gas and the first silicon-containing film-etching gas of the present invention comprise at least one compound selected from the group consisting of FCOF, CF OCOF and CF OCF OCOF, and O in the specific amount, and optionally other gases. The second chamber cleaning gas and the second silicon-containing film-etching gas comprise CF COF, C F COF or CF (COF) and O in specific amounts, and optionally may comprise other gases. The chamber cleaning gases and silicon-containing film etching gases of the present invention have a low global warming potential and hardly generate substances in the exhaust gases such as CF , etc, which are harmful to the environment and have been perceived as contributing to global warming. Therefore, the gases are friendly to the global environment, and have easy handling and excellent exhaust gas treating properties. Further, the chamber cleaning gases of the invention have excellent cleaning rate.

Cleaning gases and etching gases

The present invention relates to a protein-lipid complex which modifies the taste of a food, pharmaceutical or cosmetic, particularly has the effect of decreasing the bitterness thereof; and a method for modifying the taste of a food, pharmaceutical or cosmetic with the complex, particularly a method for decreasing the bitterness thereof with the complex.

Taste-modifying method and bitterness-decreasing method

A method for suppressing a bitter taste of material to be placed in mouth or in contact with mouth, such as foods, drinks, pharmaceuticals, comprises adding an acidic phospholipid or an acidic lysophospholipid to the material.

Method for suppressing bitter taste

A phospholipid composition which satisfies the following requirements (i) and (ii):

Phospholipid composition, fat and oil composition containing the same

Growing community of inventors

Tokyo, Japan

Yuki Mitsui