Tamura Corporation

Novel Crystal Technology, Inc.

Yuki Koishikawa

Kohei Sasaki

Daiki Wakimoto

Quang Tu Thieu

A Schottky barrier diode includes a semiconductor layer including a GaO-based single crystal, an anode electrode that forms a Schottky junction with the semiconductor layer and is configured so that a portion in contact with the semiconductor layer includes Mo or W, and a cathode electrode. A turn-on voltage thereof is not less than 0.3 V and not more than 0.5 V.

Schottky barrier diode

Provided is a Schottky barrier diode which is configured from a GaO-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diodeis provided which has: a semiconductor layerconfigured from a GaO-based single crystal; an anode electrodewhich forms a Schottky junction with the semiconductor layer, and has a portion which contacts the semiconductor layerand is composed of Fe or Cu; and a cathode electrode

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Sayama, Japan

Yuki Koishikawa