Tokuyama Corporation

Yuki Kikkawa

Takayuki Negishi

Takafumi Shimoda

Tomoaki Sato

Seiji Tono

Provided is a treatment liquid for treating a semiconductor wafer in a semiconductor forming process, the treatment liquid containing (A) a hypobromite ion, (B) a pH buffer, and (C) an onium ion represented by formula (1): (wherein R, R, R, and Reach independently denote an alkyl group having carbon number from 1 to 25,)

Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent

The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.

Semiconductor wafer treatment liquid and production method thereof

Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

Treatment liquid for semiconductor with ruthenium and method of producing the same

Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1). (wherein a is an integer from 6 to 20, R, R, and Rare independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and Xis a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.

Treatment liquid for semiconductor wafers

Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided. (In the Formula, 'a' is an integer from 6 to 20; R, R, and Rare independently, for example, an alkyl group with a carbon number from 1 to 20; and Xis, for example, a chloride ion.).

Onium salt-containing treatment liquid for semiconductor wafers

Provided are an inhibitor for RuOgas generation used in a manufacturing process of a semiconductor element, that inhibits a RuOgas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuOgas. Specifically, provided is an inhibitor for RuOgas generation for inhibiting a RuOgas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuOgas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

Inhibitor for RuOgas generation and method for inhibiting RuOgas generation

Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.

Quaternary alkyl ammonium hypochlorite solution, method of producing the same, and method for processing semiconductor wafers

A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

Quaternary alkylammonium hypochlorite solution, method for manufacturing same, and method for cleaning semiconductor wafer

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25&#xb0; C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

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Yamaguchi, Japan

Yuki Kikkawa